Patents by Inventor Po-Chung Cheng

Po-Chung Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11979971
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.
    Type: Grant
    Filed: April 10, 2019
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Shuo Su, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11973302
    Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.
    Type: Grant
    Filed: February 20, 2023
    Date of Patent: April 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Lin Louis Chang, Henry Tong Yee Shian, Alan Tu, Han-Lung Chang, Tzung-Chi Fu, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20230384697
    Abstract: An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.
    Type: Application
    Filed: August 10, 2023
    Publication date: November 30, 2023
    Inventors: Chun-Kai CHANG, Yu Sheng CHIANG, Yu De LIOU, Chi YANG, Ching-Juinn HUANG, Po-Chung CHENG
  • Publication number: 20230389168
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 30, 2023
    Inventors: Shang-Chieh CHIEN, Po-Chung CHENG, Chia-Chen CHEN, Jen-Yang CHUNG, Li-Jui CHEN, Tzung-Chi FU, Shang-Ying WU
  • Publication number: 20230386828
    Abstract: A pre-treatment apparatus can be added as a module of a wafer track system, where the pre-treatment is designed to reduce friction at the edges of a substrate. Reducing edge friction can help prevent back side edge particles during attachment to a vacuum chuck in a subsequent processing operation that can occur, for example, in an exposure device. The pre-treatment apparatus can be configured to deliver one or more gases to treat top and/or bottom surfaces of a substrate. The pre-treatment apparatus can treat back side edges of a substrate to reduce edge friction of the substrate and to prevent overlay defects.
    Type: Application
    Filed: March 23, 2023
    Publication date: November 30, 2023
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Hsiang WANG, Kai Yuan CHAN, Po-Chung CHENG, Chien Chou KO
  • Publication number: 20230384663
    Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
    Type: Application
    Filed: August 7, 2023
    Publication date: November 30, 2023
    Inventors: Chih-Tsung Shih, Shih-Chang Shih, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11832372
    Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device and a chamber enclosing at least the collector and the rotatable debris collection device. The rotatable debris collection device includes a first end support, a second end support and a plurality of vanes, ends of which are supported by the first end support and the second end support, respectively. A surface of at least one of the plurality of vanes is coated by a catalytic layer, which reduces a SnH4 to Sn.
    Type: Grant
    Filed: March 7, 2022
    Date of Patent: November 28, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shang-Chieh Chien, Po-Chung Cheng, Chia-Chen Chen, Jen-Yang Chung, Li-Jui Chen, Tzung-Chi Fu, Shang-Ying Wu
  • Patent number: 11829082
    Abstract: A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
    Type: Grant
    Filed: March 14, 2022
    Date of Patent: November 28, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shang-Ying Wu, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20230380044
    Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
    Type: Application
    Filed: July 31, 2023
    Publication date: November 23, 2023
    Inventors: Yen-Shuo SU, Jen-Hao YEH, Jhan-Hong YEH, Ting-Ya CHENG, Henry Yee Shian TONG, Chun-Lin CHANG, Han-Lung CHANG, Li-Jui CHEN, Po-Chung CHENG
  • Publication number: 20230367221
    Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.
    Type: Application
    Filed: July 25, 2023
    Publication date: November 16, 2023
    Inventors: Chi YANG, Tsung-Hsun Lee, Jian-Yuan Su, Ching-Juinn Huang, Po-Chung Cheng
  • Patent number: 11815821
    Abstract: An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.
    Type: Grant
    Filed: August 27, 2021
    Date of Patent: November 14, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Kai Chang, Yu Sheng Chiang, Yu De Liou, Chi Yang, Ching-Juinn Huang, Po-Chung Cheng
  • Publication number: 20230359135
    Abstract: Methods of fabricating and using an overlay mark are provided. In some embodiments, the overlay mark includes an upper layer and a lower layer disposed below the upper layer. The lower layer includes a first plurality of compound gratings extending in a first direction and disposed in a first region of the overlay mark, each of the first plurality of compound gratings including one first element and at least two second elements disposed on one side of the first element, and a second plurality of compound gratings extending the first direction and disposed in a second region of the overlay mark , each of the second plurality of compound gratings including one third element and at least two fourth elements on one side of the third element. The first plurality of compound gratings is a mirror image of the second plurality of compound gratings.
    Type: Application
    Filed: July 21, 2023
    Publication date: November 9, 2023
    Inventors: Hung-Chih Hsieh, Kai-Hsiung Chen, Po-Chung Cheng
  • Publication number: 20230363074
    Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.
    Type: Application
    Filed: July 19, 2023
    Publication date: November 9, 2023
    Inventors: Wei-Chih LAI, Han-Lung CHANG, Chi YANG, Shang-Chieh CHIEN, Bo--Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Patent number: 11809075
    Abstract: A lithography mask includes a substrate that contains a low thermal expansion material (LTEM). The lithography mask also includes a reflective structure disposed over the substrate. The reflective structure includes a first layer and a second layer disposed over the first layer. At least the second layer is porous. The mask is formed by forming a multilayer reflective structure over the LTEM substrate, including forming a plurality of repeating film pairs, where each film pair includes a first layer and a porous second layer. A capping layer is formed over the multilayer reflective structure. An absorber layer is formed over the capping layer.
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: November 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Tsung Shih, Shih-Chang Shih, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11796917
    Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.
    Type: Grant
    Filed: December 13, 2021
    Date of Patent: October 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi Yang, Tsung-Hsun Lee, Jian-Yuan Su, Ching-Juinn Huang, Po-Chung Cheng
  • Patent number: 11800626
    Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: October 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yen-Shuo Su, Jen-Hao Yeh, Jhan-Hong Yeh, Ting-Ya Cheng, Henry Yee Shian Tong, Chun-Lin Chang, Han-Lung Chang, Li-Jui Chen, Po-Chung Cheng
  • Patent number: 11792909
    Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: October 17, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Chih Lai, Han-Lung Chang, Chi Yang, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
  • Publication number: 20230324813
    Abstract: A method for performing a lithography process is provided. The method includes forming a photoresist layer over a substrate, providing a plurality of target droplets to a source vessel, and providing a plurality of first laser pulses according to a control signal provided by a controller to irradiate the target droplets in the source vessel to generate plasma as an EUV radiation. The plasma is generated when the control signal indicates a temperature of the source vessel is within a temperature threshold value. The method further includes directing the EUV radiation from the source vessel to the photoresist layer to form a patterned photoresist layer and developing and etching the patterned photoresist layer to form a circuit layout.
    Type: Application
    Filed: May 31, 2023
    Publication date: October 12, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi YANG, Ssu-Yu CHEN, Shang-Chieh CHIEN, Chieh HSIEH, Tzung-Chi FU, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
  • Publication number: 20230305404
    Abstract: A method of lithography process is provided. The method includes forming a conductive layer over a reticle. The method includes applying ionized particles to the reticle by a discharging device. The method includes forming a photoresist layer over a semiconductor substrate. The method includes securing the semiconductor substrate by a wafer electrostatic-clamp. The method also includes patterning the photoresist layer by emitting radiation from a radiation source via the reticle.
    Type: Application
    Filed: May 31, 2023
    Publication date: September 28, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiao-Lun CHANG, Chueh-Chi KUO, Tsung-Yen LEE, Tzung-Chi FU, Li-Jui CHEN, Po-Chung CHENG, Che-Chang HSU
  • Publication number: 20230296642
    Abstract: A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.
    Type: Application
    Filed: May 3, 2023
    Publication date: September 21, 2023
    Inventors: En Hao LAI, Chi YANG, Shang-Chieh CHIEN, Li-Jui CHEN, Po-Chung CHENG