Patents by Inventor Po-Hao Tsai

Po-Hao Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11222784
    Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.
    Type: Grant
    Filed: March 27, 2020
    Date of Patent: January 11, 2022
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Tzu-Hao Liu, Yi-Wei Chen, Tsun-Min Cheng, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Po-Chih Wu, Pin-Hong Chen, Chun-Chieh Chiu, Tzu-Chieh Chen, Chih-Chien Liu, Chih-Chieh Tsai, Ji-Min Lin
  • Patent number: 11217570
    Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.
    Type: Grant
    Filed: April 23, 2020
    Date of Patent: January 4, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Yu Chen, An-Jhih Su, Chi-Hsi Wu, Der-Chyang Yeh, Li-Hsien Huang, Po-Hao Tsai, Ming-Shih Yeh, Ta-Wei Liu
  • Publication number: 20210398905
    Abstract: A method includes forming a plurality of dielectric layers, which processes include forming a first plurality of dielectric layers having first thicknesses, and forming a second plurality of dielectric layers having second thicknesses smaller than the first thicknesses. The first plurality of dielectric layers and the second plurality of dielectric layers are laid out alternatingly. The method further includes forming a plurality of redistribution lines connected to form a conductive path, which processes include forming a first plurality of redistribution lines, each being in one of the first plurality of dielectric layers, and forming a second plurality of redistribution lines, each being in one of the second plurality of dielectric layers.
    Type: Application
    Filed: June 23, 2020
    Publication date: December 23, 2021
    Inventors: Po-Yuan Teng, Kuo Lung Pan, Yu-Chia Lai, Tin-Hao Kuo, Hao-Yi Tsai, Chen-Hua Yu
  • Publication number: 20210391317
    Abstract: Packaged devices and methods of manufacturing the devices are described herein. The packaged devices may be fabricated using heterogeneous devices and asymmetric dual-side molding on a multi-layered redistribution layer (RDL) structure. The packaged devices may be formed with a heterogeneous three-dimensional (3D) Fan-Out System-in-Package (SiP) structure having small profiles and can be formed using a single carrier substrate.
    Type: Application
    Filed: June 15, 2020
    Publication date: December 16, 2021
    Inventors: Yi-Wen Wu, Po-Yao Chuang, Meng-Liang Lin, Techi Wong, Shih-Ting Hung, Po-Hao Tsai, Shin-Puu Jeng
  • Publication number: 20210384125
    Abstract: A method for forming a package structure is provided. The method includes forming a first interconnect structure over a carrier substrate and disposing a first die structure over the first interconnect structure. The method includes forming a dam structure over the first die structure. The method also includes forming a protection layer over a second interconnect structure. The method further includes bonding the second interconnect structure over the dam structure. In addition, the method includes forming a package layer between the first interconnect structure and the second interconnect structure. The method also includes removing the protection layer.
    Type: Application
    Filed: August 18, 2021
    Publication date: December 9, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Hao TSAI, Techi WONG, Meng-Liang LIN, Yi-Wen WU, Po-Yao CHUANG, Shin-Puu JENG
  • Publication number: 20210375815
    Abstract: A method includes forming a seed layer over a first conductive feature of a wafer, forming a patterned plating mask on the seed layer, and plating a second conductive feature in an opening in the patterned plating mask. The plating includes performing a plurality of plating cycles, with each of the plurality of plating cycles including a first plating process performed using a first plating current density, and a second plating process performed using a second plating current density lower than the first plating current density. The patterned plating mask is then removed, and the seed layer is etched.
    Type: Application
    Filed: October 13, 2020
    Publication date: December 2, 2021
    Inventors: Po-Hao Tsai, Ming-Da Cheng, Wen-Hsiung Lu, Hsu-Lun Liu, Kai-Di Wu, Su-Fei Lin
  • Publication number: 20210375672
    Abstract: A method includes forming a patterned mask comprising a first opening, plating a conductive feature in the first opening, depositing a passivation layer on a sidewall and a top surface of the conductive feature, and patterning the passivation layer to form a second opening in the passivation layer. The passivation layer has sidewalls facing the second opening. A planarization layer is dispensed on the passivation layer. The planarization layer is patterned to form a third opening. After the planarization layer is patterned, a portion of the planarization layer is located in the second opening and covers the sidewalls of the passivation layer. An Under-Bump Metallurgy (UBM) is formed to extend into the third opening.
    Type: Application
    Filed: December 4, 2020
    Publication date: December 2, 2021
    Inventors: Ming-Da Cheng, Tzy-Kuang Lee, Hao Chun Liu, Po-Hao Tsai, Chih-Hsien Lin, Ching-Wen Hsiao
  • Publication number: 20210375755
    Abstract: A semiconductor package is provided. The semiconductor package includes an encapsulating layer, a semiconductor die formed in the encapsulating layer, and an interposer structure covering the encapsulating layer. The interposer structure includes an insulating base having a first surface facing the encapsulating layer, and a second surface opposite the first surface. The interposer structure also includes insulting features formed on the first surface of the insulating base and extending into the encapsulating layer. The insulting features are arranged in a matrix and face a top surface of the semiconductor die. The interposer structure further includes first conductive features formed on the first surface of the insulating base and extending into the encapsulating layer. The first conductive features surround the matrix of the plurality of insulting features.
    Type: Application
    Filed: August 12, 2021
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Wen Wu, Techi Wong, Po-Hao Tsai, Po-Yao Chuang, Shih-Ting Hung, Shin-Puu Jeng
  • Publication number: 20210375675
    Abstract: A method includes forming a first conductive feature, depositing a passivation layer on a sidewall and a top surface of the first conductive feature, etching the passivation layer to reveal the first conductive feature, and recessing a first top surface of the passivation layer to form a step. The step comprises a second top surface of the passivation layer. The method further includes forming a planarization layer on the passivation layer, and forming a second conductive feature extending into the passivation layer to contact the first conductive feature.
    Type: Application
    Filed: October 30, 2020
    Publication date: December 2, 2021
    Inventors: Ming-Da Cheng, Tzy-Kuang Lee, Song-Bor Lee, Wen-Hsiung Lu, Po-Hao Tsai, Wen-Che Chang
  • Publication number: 20210351118
    Abstract: A method includes forming an interposer, which includes forming a rigid dielectric layer, and removing portions of the rigid dielectric layer. The method further includes bonding a package component to an interconnect structure, and bonding the interposer to the interconnect structure. A spacer in the interposer has a bottom surface contacting a top surface of the package component, and the spacer includes a feature selected from the group consisting of a metal feature, the rigid dielectric layer, and combinations thereof. A die-saw is performed on the interconnect structure.
    Type: Application
    Filed: July 23, 2021
    Publication date: November 11, 2021
    Inventors: Po-Hao Tsai, Techi Wong, Meng-Wei Chou, Meng-Liang Lin, Po-Yao Chuang, Shin-Puu Jeng
  • Publication number: 20210343652
    Abstract: A method for forming a chip package structure is provided. The method includes forming a conductive pad over a carrier substrate. The method includes forming a substrate layer over the carrier substrate, wherein the conductive pad is embedded in the substrate layer, and the substrate layer includes fibers. The method includes forming a through hole in the substrate layer and exposing the conductive pad. The method includes forming a conductive pillar in the through hole. The method includes forming a recess in the substrate layer. The method includes disposing a chip in the recess. The method includes forming a molding layer in the recess. The method includes forming a redistribution structure over the substrate layer, the conductive pillar, the molding layer, and the chip. The method includes removing the carrier substrate.
    Type: Application
    Filed: July 12, 2021
    Publication date: November 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shin-Puu JENG, Techi WONG, Po-Yao LIN, Ming-Chih YEW, Po-Hao TSAI, Po-Yao CHUANG
  • Publication number: 20210343665
    Abstract: A semiconductor device and manufacturing process are provided wherein a first semiconductor device is electrically connected to redistribution structures. An antenna structure is located on an opposite side of the first semiconductor device from the redistribution structures, and electrical connections separate from the first semiconductor device connect the antenna structure to the redistribution structures.
    Type: Application
    Filed: July 12, 2021
    Publication date: November 4, 2021
    Inventors: Po-Yao Chuang, Po-Hao Tsai, Shin-Puu Jeng
  • Patent number: 11164754
    Abstract: Embodiments include forming an interposer having reinforcing structures disposed in a core layer of the interposer. The interposer may be attached to a package device by electrical connectors. The reinforcing structures provide rigidity and thermal dissipation for the package device. Some embodiments may include an interposer with an opening in an upper core layer of the interposer to a recessed bond pad. Some embodiments may also use connectors between the interposer and the package device where a solder material connected to the interposer surrounds a metal pillar connected to the package device.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: November 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Hao Tsai, Ming-Chih Yew, Chia-Kuei Hsu, Shin-Puu Jeng, Po-Yao Chuang, Meng-Liang Lin, Shih-Ting Hung, Po-Yao Lin
  • Patent number: 11164852
    Abstract: A method includes forming an under bump metallization (UBM) layer over a dielectric layer, forming a redistribution structure over the UBM layer, disposing a semiconductor device over the redistribution structure, removing a portion of the dielectric layer to form an opening to expose the UBM layer, and forming a conductive bump in the opening such that the conductive bump is coupled to the UBM layer.
    Type: Grant
    Filed: February 11, 2019
    Date of Patent: November 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jing-Cheng Lin, Po-Hao Tsai
  • Publication number: 20210335701
    Abstract: A semiconductor device includes a substrate, a first redistribution layer (RDL) over a first side of the substrate, one or more semiconductor dies over and electrically coupled to the first RDL, and an encapsulant over the first RDL and around the one or more semiconductor dies. The semiconductor device also includes connectors attached to a second side of the substrate opposing the first side, the connectors being electrically coupled to the first RDL. The semiconductor device further includes a polymer layer on the second side of the substrate, the connectors protruding from the polymer layer above a first surface of the polymer layer distal the substrate. A first portion of the polymer layer contacting the connectors has a first thickness, and a second portion of the polymer layer between adjacent connectors has a second thickness smaller than the first thickness.
    Type: Application
    Filed: July 12, 2021
    Publication date: October 28, 2021
    Inventors: Jing-Cheng Lin, Chi-Hsi Wu, Chen-Hua Yu, Po-Hao Tsai
  • Patent number: 11158587
    Abstract: A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.
    Type: Grant
    Filed: January 6, 2020
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Po-Hao Tsai, Jui-Pin Hung, Jing-Cheng Lin
  • Patent number: 11158588
    Abstract: A packaged semiconductor device includes a substrate and a contact pad disposed on the semiconductor substrate. The packaged semiconductor device also includes a dielectric layer disposed over the contact pad, the dielectric layer including a first opening over the contact pad, and an insulator layer disposed over the dielectric layer, the insulator layer including a second opening over the contact pad. The packaged semiconductor device also includes a molding material disposed around the substrate, the dielectric layer, and the insulator layer and a wiring over the insulator layer and extending through the second opening, the wiring being electrically coupled to the contact pad.
    Type: Grant
    Filed: June 15, 2020
    Date of Patent: October 26, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Po-Hao Tsai, Jui-Pin Hung, Jing-Cheng Lin
  • Publication number: 20210327816
    Abstract: A method includes dispensing sacrificial region over a carrier, and forming a metal post over the carrier. The metal post overlaps at least a portion of the sacrificial region. The method further includes encapsulating the metal post and the sacrificial region in an encapsulating material, demounting the metal post, the sacrificial region, and the encapsulating material from the carrier, and removing at least a portion of the sacrificial region to form a recess extending from a surface level of the encapsulating material into the encapsulating material.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Inventors: Jing-Cheng Lin, Chen-Hua Yu, Po-Hao Tsai
  • Publication number: 20210320069
    Abstract: Structures and formation methods of chip packages are provided. The method includes disposing a semiconductor die over a carrier substrate. The method also includes disposing an interposer substrate over the carrier substrate. The interposer substrate has a recess that penetrates through opposite surfaces of the interposer substrate. The interposer substrate has interior sidewalls surrounding the semiconductor die, and the semiconductor die is as high as or higher than the interposer substrate. The method further includes forming a protective layer in the recess of the interposer substrate to surround the semiconductor die. In addition, the method includes removing the carrier substrate and stacking a package structure over the interposer substrate.
    Type: Application
    Filed: June 25, 2021
    Publication date: October 14, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shin-Puu JENG, Po-Hao TSAI, Po-Yao CHUANG, Techi WONG
  • Patent number: 11114405
    Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a chip structure. The semiconductor package structure includes a first conductive structure over the chip structure. The first conductive structure is electrically connected to the chip structure. The first conductive structure includes a first transition layer over the chip structure; a first conductive layer on the first transition layer; and a second conductive layer over the first conductive layer. The first conductive layer is substantially made of twinned copper. A first average roughness of a first top surface of the second conductive layer is less than a second average roughness of a second top surface of the first conductive layer.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: September 7, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jung-Hua Chang, Po-Hao Tsai, Jing-Cheng Lin