Abstract: An electronic device is disclosed. The electronic device includes a substrate, a plurality of color filters disposed on the substrate, an optical film disposed on the plurality of color filter, and a defect disposed between the substrate and the optical film. The optical film has a first base, a protective layer on the first base, and a second base between the first base and the protective layer and having a first processed area. In a top view of the electronic device, the first processed area corresponds to the defect and at least partially overlaps at least two color filters.

Abstract: A process of overlay offset measurement includes providing a substrate; forming a first pattern layer with a predetermined first pattern on the substrate; forming a first photoresist layer on the substrate and the first pattern layer; forming a second photoresist layer on the first photoresist layer; forming a second pattern layer with a predetermined second pattern on the second photoresist layer; patterning the second photoresist layer to form a trench having a predetermined third pattern being substantially aligned with the predetermined first pattern of the first pattern layer; and performing overlay offset measurement according to the second pattern layer and the trench.

Abstract: A process of overlay offset measurement includes providing a substrate; forming a first pattern layer with a predetermined first pattern on the substrate; forming a first photoresist layer on the substrate and the first pattern layer; forming a second photoresist layer on the first photoresist layer; forming a second pattern layer with a predetermined second pattern on the second photoresist layer; patterning the second photoresist layer to form a trench having a predetermined third pattern being substantially aligned with the predetermined first pattern of the first pattern layer; and performing overlay offset measurement according to the second pattern layer and the trench.

Abstract: A sensor device provided in the disclosure includes a sensor substrate, a first transparent layer, a collimator layer, and a lens. The first transparent layer is disposed on the sensor substrate, wherein the first transparent layer defines an alignment structure. The collimator layer is disposed on the first transparent layer. The lens is disposed on the collimator layer.

Abstract: A liquid crystal display includes a first substrate, a pixel array, a first pad, a dielectric layer, a filling pattern, a first conductor, a second substrate and a liquid crystal layer. The first substrate has a display area and a pad area located outside the display area. The pixel array is disposed on the display area. The first pad is disposed on the pad area. The dielectric layer has a first opening overlapped with the first pad. The filling pattern is disposed within the first opening of the dielectric layer. The filling pattern has through holes, and the through holes of the filling pattern are overlapped with the first pads. The first conductor is disposed in the first opening of the dielectric layer, and is electrically connected to the first pad via the through holes of the filling pattern.

Abstract: A sensor device provided in the disclosure includes a sensor substrate, a first transparent layer, a collimator layer, and a lens. The first transparent layer is disposed on the sensor substrate, wherein the first transparent layer defines an alignment structure. The collimator layer is disposed on the first transparent layer. The lens is disposed on the collimator layer.

Abstract: A method of fabricating a sensor device including at least the following steps is provided. An optical film stack is formed on a sensor substrate, wherein the sensor substrate includes a sensor region and a pad region beside the sensor region, and the optical film stack covers the sensor region while exposes the pad region. A releasing pattern is formed on the pad region. A lens material layer is formed on the sensor substrate to cover the releasing pattern and the optical film stack. The releasing pattern is removed from the sensor substrate to expose the pad region by patterning the lens material layer to form a lens on the optical film stack.

Abstract: A patterned light guide structure includes a transparent substrate with a first side and with a second side, an anti-reflective layer directly attached to the first side, a first light-shielding layer directly disposed on the anti-reflective layer, a second light-shielding layer directly disposed on the second side, and a protecting layer directly disposed on the first light-shielding layer to keep the first light-shielding layer from any deteriorating damage.

Abstract: A sensor device provided in the disclosure includes a sensor substrate, a first transparent layer, a collimator layer, and a lens. The first transparent layer is disposed on the sensor substrate, wherein the first transparent layer defines an alignment structure. The collimator layer is disposed on the first transparent layer. The lens is disposed on the collimator layer.

Abstract: A process of overlay offset measurement includes providing a substrate; forming a first pattern layer with a predetermined first pattern on the substrate; forming a first photoresist layer on the substrate and the first pattern layer; forming a second photoresist layer on the first photoresist layer; forming a second pattern layer with a predetermined second pattern on the second photoresist layer; patterning the second photoresist layer to form a trench having a predetermined third pattern being substantially aligned with the predetermined first pattern of the first pattern layer; and performing overlay offset measurement according to the second pattern layer and the trench.

Abstract: A method of fabricating a sensor device including at least the following steps is provided. An optical film stack is formed on a sensor substrate, wherein the sensor substrate includes a sensor region and a pad region beside the sensor region, and the optical film stack covers the sensor region while exposes the pad region. A releasing pattern is formed on the pad region. A lens material layer is formed on the sensor substrate to cover the releasing pattern and the optical film stack. The releasing pattern is removed from the sensor substrate to expose the pad region by patterning the lens material layer to form a lens on the optical film stack.

Abstract: A patterned light guide structure includes a transparent substrate with a first side and with a second side, an anti-reflective layer directly attached to the first side, a first light-shielding layer directly disposed on the anti-reflective layer, a second light-shielding layer directly disposed on the second side, and a protecting layer directly disposed on the first light-shielding layer to keep the first light-shielding layer from any deteriorating damage.

Abstract: A liquid crystal display includes a first substrate, a pixel array, a first pad, a dielectric layer, a filling pattern, a first conductor, a second substrate and a liquid crystal layer. The first substrate has a display area and a pad area located outside the display area. The pixel array is disposed on the display area. The first pad is disposed on the pad area. The dielectric layer has a first opening overlapped with the first pad. The filling pattern is disposed within the first opening of the dielectric layer. The filling pattern has through holes, and the through holes of the filling pattern are overlapped with the first pads. The first conductor is disposed in the first opening of the dielectric layer, and is electrically connected to the first pad via the through holes of the filling pattern.

Abstract: An image sensor structure includes a substrate, a first infrared filter, a second infrared filter, a planarization layer, a color filter and a third infrared filter. The substrate has a first sensing region for detecting visible light and a second sensing region neighboring the first sensing region for detecting infrared light. The first infrared filter is disposed on the first sensing region. The second infrared filter is disposed on the second sensing region and neighbors the first infrared filter. The second infrared filter defines one or more openings for penetrating incident light. The planarization layer is over the first infrared filter and the second infrared filter, and fills the one or more openings. The color filter is on the planarization layer and vertically above the first sensing region. The third infrared filter is on the planarization layer and is vertically above the second sensing region.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion includes an infrared cutoff filter ball layer configured to collect the visible light. In some embodiments of the present invention, the infrared receiving portion includes a micro-lens layer configured to collect the infrared. In some other embodiments of the present invention, the infrared receiving portion includes an infrared pass filter ball layer configured to collect the infrared.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The visible light receiving portion includes a first white filter. The infrared receiving portion is configured to receive infrared. The infrared receiving portion includes an infrared photodiode, a second white filter, and an infrared pass filter. The second white filter is disposed on the infrared photodiode. The infrared pass filter is disposed on the infrared photodiode. The infrared is received by the infrared photodiode after passing through the second white filter and the infrared pass filter.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion includes a color filter ball layer configured to collect the visible light. In some embodiments of the present invention, the infrared receiving portion includes an infrared pass filter ball layer configured to collect the infrared. In some other embodiments of the present invention, the infrared receiving portion includes a white filter ball layer configured to collect the infrared.

Abstract: A method for forming an image sensor includes: providing a first device including a visible light receiving portion and an infrared receiving portion; coating a first infrared cutoff filter on the first device; patterning plural photoresists on the first infrared cutoff filter located in the visible light receiving portion to form a second device; etching the second device until a first filter of the first device is exposed to form an infrared cutoff filter and an infrared cutoff filter grid located in the visible light receiving portion, in which the infrared cutoff filter grid is located on the infrared cutoff filter; filling a color filter in the infrared cutoff filter grid and forming a second filter on the first filter; and disposing a spacer layer and a micro-lens layer on the color filter and the second filter sequentially.

Abstract: An image sensor structure includes a substrate, a first infrared filter, a second infrared filter, a planarization layer, a color filter and a third infrared filter. The substrate has a first sensing region for detecting visible light and a second sensing region neighboring the first sensing region for detecting infrared light. The first infrared filter is disposed on the first sensing region. The second infrared filter is disposed on the second sensing region and neighbors the first infrared filter. The second infrared filter defines one or more openings for penetrating incident light. The planarization layer is over the first infrared filter and the second infrared filter, and fills the one or more openings. The color filter is on the planarization layer and vertically above the first sensing region. The third infrared filter is on the planarization layer and is vertically above the second sensing region.

Abstract: The present invention provides an image sensor, a micro-lens array with different heights in a pixel size level in the image sensor, and a method for fabricating the micro-lens array with different heights in the pixel size level in the image sensor. The present invention uses three different optical masks to fabricate a micro-lens array with different heights in a pixel size level in an image sensor, and the micro-lens array with different heights in a pixel size level in the image sensor disclosed by the present invention is capable of providing the same depth of focus (or nearly the same depth of focus) for every photodiode in the image sensor with lower cost.