Abstract: A method of forming gates includes the following steps. Dummy gates are formed on a substrate. A spacer material is deposited to conformally cover the dummy gates. A removing process is performed to remove parts of the spacer material and the dummy gates, thereby forming spacers and recesses in the spacers.

Abstract: A tool-less fastening device for an edge card is provided. The edge card is accommodated in a fastening frame, and the fastening frame is then inserted into an electric connector. In an assembly process, the edge card is fastened with the fastening frame without using any tool, and a user only needs to engage the edge card into the fastening frame; next, the fastening frame is inserted into the electric connector without using any tool, and the user only needs to engage the fastening spring clips disposed on two opposite sides of the fastening frame with two anus of the electric connector, so as to complete a fastening operation. The fastening frame and the electric connector can be prevented from being separated from each other when being shaken during manufacturing or shipment process. Therefore, the edge card can be fastened with the electric connector without using any tool.

Abstract: A method of forming gates includes the following steps. Dummy gates are formed on a substrate. A spacer material is deposited to conformally cover the dummy gates. A removing process is performed to remove parts of the spacer material and the dummy gates, thereby forming spacers and recesses in the spacers.

Abstract: An edge card mounting structure includes an edge card, an electrical connector disposed on a circuit board, and a rack that holds the edge card and is inserted into the electrical connector to electrically connect the edge card to the electrical connector. The rack includes a rack body that accommodates the edge card, two bearing plates bilaterally disposed in the rack body, and two adjustment members that are elastically pressable to move the accommodated edge card downwardly into abutment against the bearing plates where the electric contacts of the edge card are kept in contact with the respective contact endpieces of the conducting terminal set of the electrical connector for transmitting high frequency signals.

Abstract: The present invention provides a method for accessing a flash memory module, wherein the method comprises: building a physical block recording table corresponding to a logical address to physical address (L2P) mapping table, wherein the physical block recording table records at least one block whose physical address is recorded in the L2P mapping table; and when a specific block within the flash memory module is under a garbage collection operation, for a data page of the specific block whose logical address is within the L2P mapping table, referring to the physical block recording table to determine if reading the L2P mapping table from the flash memory module or not, for determining the data page to be valid or invalid.

Abstract: A tool-less fastening device for an edge card is provided. The edge card is accommodated in a fastening frame, and the fastening frame is then inserted into an electric connector. In an assembly process, the edge card is fastened with the fastening frame without using any tool, and a user only needs to engage the edge card into the fastening frame; next, the fastening frame is inserted into the electric connector without using any tool, and the user only needs to engage the fastening spring clips disposed on two opposite sides of the fastening frame with two anus of the electric connector, so as to complete a fastening operation. The fastening frame and the electric connector can be prevented from being separated from each other when being shaken during manufacturing or shipment process. Therefore, the edge card can be fastened with the electric connector without using any tool.

Abstract: An edge card mounting structure includes an edge card, an electrical connector disposed on a circuit board, and a rack that holds the edge card and is inserted into the electrical connector to electrically connect the edge card to the electrical connector. The rack includes a rack body that accommodates the edge card, two bearing plates bilaterally disposed in the rack body, and two adjustment members that are elastically pressable to move the accommodated edge card downwardly into abutment against the bearing plates where the electric contacts of the edge card are kept in contact with the respective contact endpieces of the conducting terminal set of the electrical connector for transmitting high frequency signals.

Abstract: The present invention provides a method for accessing a flash memory module, wherein the method comprises: building a physical block recording table corresponding to a logical address to physical address (L2P) mapping table, wherein the physical block recording table records at least one block whose physical address is recorded in the L2P mapping table; and when a specific block within the flash memory module is under a garbage collection operation, for a data page of the specific block whose logical address is within the L2P mapping table, referring to the physical block recording table to determine if reading the L2P mapping table from the flash memory module or not, for determining the data page to be valid or invalid.

Abstract: A manufacturing method of a pattern transfer mask includes the following steps. A basic mask is provided. The basic mask includes a plurality of patterns formed by a patterned absorber layer on a substrate according to a first writing layout. A photolithographic process is then performed by the basic mask to obtain individual depth of focus (iDoF) ranges of each of the patterns and a usable depth of focus (UDoF) range of the patterns. At least one constrain pattern dominating the UDoF range is selected from the patterns in the basic mask. The rest of the patterns except the constrain pattern are non-dominating patterns. A second writing layout is then generated for reducing a thickness of the patterned absorber layer in the constrain pattern or in the non-dominating patterns.

Abstract: A manufacturing method of a pattern transfer mask includes the following steps. A basic mask is provided. The basic mask includes a plurality of patterns formed by a patterned absorber layer on a substrate according to a first writing layout. A photolithographic process is then performed by the basic mask to obtain individual depth of focus (iDoF) ranges of each of the patterns and a usable depth of focus (UDoF) range of the patterns. At least one constrain pattern dominating the UDoF range is selected from the patterns in the basic mask. The rest of the patterns except the constrain pattern are non-dominating patterns. A second writing layout is then generated for reducing a thickness of the patterned absorber layer in the constrain pattern or in the non-dominating patterns.

Abstract: An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.

Abstract: A method for automatically shifting the base line has the following steps. First step is inserting the PM data into the processing data and calculating the original mean value of each section. Depending on the absolute value of the difference between each data point and the first mean value of each section, the data points are ranked. Next step is selecting the data points in the front N % of the ranked data points and then calculating the mean value and standard deviation. Next step is filtering the outlier data and calculating the base lines of each section. At last, the base lines are shifted and corrected into the same level so that the correlation error caused by base line shift is eliminated.

Abstract: A process and apparatus for growing a group (III) metal nitride film by remote plasma enhanced chemical vapor deposition are described. The process comprises heating an object selected from the group consisting of a substrate and a substrate comprising a buffer layer in a growth chamber to a temperature in the range of from about 400° C. to o about 750° C., producing active neutral nitrogen species in a nitrogen plasma remotely located from the growth chamber and transferring the active neutral nitrogen species to the growth chamber. A reaction mixture is formed in the growth chamber, the reaction mixture containing a species of a group (III) metal that is capable of reacting with the nitrogen species so as to form a group (III) metal nitride film and a film of group (III) s metal nitride is formed on the heated object under conditions whereby the film is suitable for device purposes. Also described is a group (III) metal nitride film which exhibits an oxygen concentration below 1.6 atomic %.

Abstract: An apparatus for depositing a group III metal nitride film on a substrate, the apparatus comprising a plasma generator to generate a nitrogen plasma from a nitrogen source, a reaction chamber in which to react a reagent comprising a group III metal with a reactive nitrogen species derived from the nitrogen plasma so as to deposit a group III metal nitride on the substrate, a plasma inlet to facilitate the passage of nitrogen plasma from the plasma generator into the reaction chamber and a baffle having one or more flow channels for passage of the nitrogen plasma. The baffle is located between the plasma inlet and the substrate and prevents a direct line of passage for nitrogen plasma between the plasma inlet and the substrate.

Abstract: A method for automatically shifting the base line has the following steps. First step is inserting the PM data into the processing data and calculating the original mean value of each section. Depending on the absolute value of the difference between each data point and the first mean value of each section, the data points are ranked. Next step is selecting the data points in the front N % of the ranked data points and then calculating the mean value and standard deviation. Next step is filtering the outlier data and calculating the base lines of each section.

Abstract: A method for automatically shifting the base line has the following steps. First step is inserting the PM data into the processing data and calculating the original mean value of each section. Depending on the absolute value of the difference between each data point and the first mean value of each section, the data points are ranked. Next step is selecting the data points in the first N % of the ranked data points and then calculating the mean value and standard deviation. Next step is filtering the outlier data and calculating the base lines of each section.

Abstract: A process and apparatus for growing a group (III) metal nitride film by remote plasma enhanced chemical vapour deposition are described. The process comprises heating an object selected from the group consisting of a substrate and a substrate comprising a buffer layer in a growth chamber to a temperature in the range of from about 400° C. to o about 750° C., producing active neutral nitrogen species in a nitrogen plasma remotely located from the growth chamber and transferring the active neutral nitrogen species to the growth chamber. A reaction mixture is formed in the growth chamber, the reaction mixture containing a species of a group (III) metal that is capable of reacting with the nitrogen species so as to form a group (III) metal nitride film and a film of group (III) s metal nitride is formed on the heated object under conditions whereby the film is suitable for device purposes. Also described is a group (III) metal nitride film which exhibits an oxygen concentration below 1.6 atomic %.

Abstract: Ejecting mechanism for memory card, including a seat cover, a press key seat fitted in a clamping sheath of the seat cover and a press key fitted in the press key seat. A guide channel is formed on front end of the press key. A hook is disposed on the press key seat and slidably inlaid in the guide channel, whereby the press key seat and the press key can be extended or retracted to change the length. A support arm is pivotally disposed on the seat cover, having a stop section at one end and a projecting section at the other end. The seat cover is formed with a resilient abutting plate under the projecting section. When the memory card is inserted into the terminal seat, the support arm is pushed and pivoted and the resilient abutting plate abuts against and lifts the projecting section to attach to a depressed face of the press key. When the press key is ejected, the projecting plate is resiliently lifted to engage with the front end of the press key.

Abstract: Assembling structure for portable memory device, including a memory device main body composed of a bottom cover, an upper cover and a circuit board. Two corners of one end of the bottom cover is formed with recessed sections. The other end thereof is formed with a thread hole. The upper cover is formed with hook boards and a through hole corresponding to the recessed sections and thread hole. The upper cover is mated and locked with the bottom cover by a bolt to clamp the circuit board. An adapter of the circuit board outward extends from the main body. A sheath is fitted around the main body. One end of the sheath is formed with a through hole through which the adapter outward protrudes. The sheath and the main body are formed with corresponding stop board and lateral projecting blocks, whereby the main body is slidable within the sheath to extend the adapter out of the sheath or retract the adapter therein.