Patents by Inventor Prashanth Kothnur

Prashanth Kothnur has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150371827
    Abstract: The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.
    Type: Application
    Filed: August 25, 2014
    Publication date: December 24, 2015
    Inventors: Ludovic Godet, Jun Xue, Prashanth Kothnur, Umesh M. Kelkar, Matthew D. Scotney-Castle
  • Publication number: 20150279635
    Abstract: A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.
    Type: Application
    Filed: January 27, 2015
    Publication date: October 1, 2015
    Inventors: Anantha K. Subramani, Deepak Jadhav, Ashish Goel, Hanbing Wu, Prashanth Kothnur, Chi Hong Ching
  • Publication number: 20150114823
    Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.
    Type: Application
    Filed: October 24, 2013
    Publication date: April 30, 2015
    Inventors: Joung Joo LEE, Guojun LIU, Wei W. WANG, Prashanth KOTHNUR
  • Publication number: 20140262767
    Abstract: Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Anantha K. SUBRAMANI, Tza-Jing GUNG, Prashanth KOTHNUR, Hanbing WU
  • Publication number: 20130000848
    Abstract: A substrate processing system includes a pedestal including a substrate supporting surface having a diameter that is greater than a diameter of a substrate to be processed by the substrate processing system. A first surface extends a first distance above the substrate supporting surface in a direction substantially perpendicular to the substrate supporting surface. The first distance is greater than or equal to one-half of a thickness of the substrate. A gap is defined between the first surface and an outer diameter of the substrate. A second surface extends a second distance from the first surface at an angle with respect to the first surface. The angle is greater than zero and less than ninety degrees. A third surface extends from the second surface and is substantially parallel to the substrate supporting surface. An etchant source directs etchant onto the substrate to etch the substrate.
    Type: Application
    Filed: May 2, 2012
    Publication date: January 3, 2013
    Applicant: Novellus Systems Inc.
    Inventors: Panya Wongsenakhum, Gary Lind, Prashanth Kothnur
  • Publication number: 20090250334
    Abstract: Systems and methods of forming plasma are provided. In an embodiment, a plasma generator system is provided including a container, a single coil disposed around the container, the single coil being a single member and having a first end, a second end, a first winding, and a second winding, wherein the first winding extends from the first end, and the second winding is integrally formed as part of the first winding and extends to the second end, an energy source electrically coupled directly to the first end of the single member, and a capacitor electrically coupled directly to the second end of the single member.
    Type: Application
    Filed: April 3, 2008
    Publication date: October 8, 2009
    Inventors: Huatan Qiu, David Cheung, Prashanth Kothnur