Abstract: Provided is an electrically actuated resistive non-volatile memory. The resistive memory device comprises a first electrode, a second electrode, a buffer layer, and a primary memory layer. The primary memory layer comprises a first active layer, a second active layer, and a third active layer, wherein an oxygen gradient is configured across the primary memory layer. Methods of fabricating and operating such a memory device are also provided. The memory device advantageously provides for lower power consumption and more stable resistive switching.

Abstract: According to embodiments of the present invention, a memory device is provided. The memory device includes an electrochemical metallization memory (ECM) cell and a valence change memory (VCM) cell arranged one over the other. According to further embodiments of the present invention, a method of forming a memory device, a method for controlling a memory device, and a memory array are also provided.