Abstract: A method for constructing an artificial intelligence (AI) integrated model is provided, including: obtaining a training dataset, an initial graph network model, and a plurality of base models; then iteratively training the initial graph network model by using training data in the training dataset and the plurality of base models, to obtain a graph network model; and then constructing the AI integrated model based on the graph network model and the plurality of base models, where an input of the graph network model is a graph structure consisting of outputs of the plurality of base models. Since the graph network model considers neighboring nodes of each node in the graph structure when processing the graph structure, the graph network model fully considers differences and correlations between the base models when fusing the outputs of the plurality of base models.

Abstract: Methods and devices for epitaxially growing boron doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.

Abstract: A display panel and a display device, including: a light-emitting region and a non-light- emitting region located at a periphery of the light-emitting region; the display panel includes a light-emitting side and a backlighting side disposed opposite to each other along a thickness direction; the display panel includes a touch layer and a filter layer located in the touch layer, the filter layer includes a color filter, the touch layer includes first and second touch wires, and the second touch wire is located at a side of the first touch wire close to the light-emitting side; the color filter includes first and second color filters, the first color filter is located at the light-emitting region, the second color filter and the first and second touch wires are all located at the non-light-emitting region, and the second color filter is located between the first and second touch wires.

Abstract: A method for forming a semiconductor device structure is disclosure. The method may include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate, depositing a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric, removing the first work function metal over the PMOS gate dielectric, and depositing a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. Semiconductor device structures including desired metal gate electrodes deposited by the methods of the disclosure are also disclosed.

Abstract: The current disclosure relates to the manufacture of semiconductor devices, specifically to methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate. The disclosure further relates to structures and devices formed by the methods, as well as to a deposition assembly.

Abstract: A database system that, after receiving the query request, adopts a pre-trained deep learning model to predict probing cardinality corresponding to the query request based on the query vector in the query request, the number of vectors of the query result, and the vector corresponding to the distances between the query vector and the center vector of a plurality of data partitions stored in the storage device. The system then determines the target data partitions according to the probing cardinality, and obtains the query result from the target data partitions. Since the probing cardinality is dynamically determined based on the query request, decreases to both the query efficiency due to a larger setting of the probing cardinality, and the query recall due to a smaller setting of the probing cardinality are avoided, which is beneficial in reducing the average number of target data partitions and improving query efficiency.

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

Abstract: Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; depositing a nucleation film directly on the dielectric surface; and depositing a molybdenum metal film directly on the nucleation film, wherein depositing the molybdenum metal film includes: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed over a surface of a dielectric material with an intermediate nucleation film are also disclosed.

Abstract: A traffic accident forensics method based on a blockchain is provided. After a traffic accident, the method allows vehicles to carry out a mutual verification and sign a respective accident report. After one of the vehicles verifies with a road side unit, the signed accident report is submitted to the road side unit and uploaded to the blockchain, so as to record the accident report and preventing the accident report from being tampered, and an efficient mutual verification between the vehicle and the road side unit is achieved. The key parameters in the mutual verification process are encrypted based on an elliptic curve algorithm, and thus the security of the whole mutual verification process is improved. A batch verification way for signatures is designed to reduce the compute pressure of a wireless device. Vehicles use dynamic anonymity policies to protect privacy in the forensics method.

Abstract: Methods of forming a vanadium nitride-containing layer comprise providing a substrate within a reaction chamber of a reactor and depositing a vanadium nitride-containing layer onto a surface of the substrate, wherein the deposition process comprises providing a vanadium precursor to the reaction chamber and providing a nitrogen precursor to the reaction chamber.

Abstract: Disclosed are methods and systems for depositing layers comprising vanadium, nitrogen, and element selected from the list consisting of molybdenum, tantalum, niobium, aluminum, and silicon. The layers are deposited onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Abstract: Methods and systems for depositing vanadium nitride layers onto a surface of the substrate and structures and devices formed using the methods are disclosed. An exemplary method includes using a cyclical deposition process, depositing a vanadium nitride layer onto a surface of the substrate. The cyclical deposition process can include providing a vanadium halide precursor to the reaction chamber and separately providing a nitrogen reactant to the reaction chamber. The cyclical deposition process may desirably be a thermal cyclical deposition process.

Abstract: A method for inter-hospital identity authentication and electronic medical record transfer of patients is provided. Based on a blockchain technology, a patient achieves secure and efficient inter-hospital transfer authentication, and a new hospital accesses an electronic medical record with authorization of the patient, thus achieving reliable electronic medical record access controls. In each hospital, the patient, a medical server, and a doctor achieve efficient tripartite authentication and negotiation of session keys, and communicate based on the session keys. By introducing an elliptic curve to encrypt key parameters in an authentication process, a security of the entire authentication process is improved, and a computational pressure on a wireless device is reduced. In the authentication and the electronic medical record, the patient uses dynamic anonymity policies to protect privacy.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: The manufacture of semiconductor devices may include methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to form vanadium metal on the substrate.

Abstract: Methods and systems for forming a p-type doped silicon germanium layer. The p-type doped silicon germanium layer can include silicon, germanium, gallium, and, in at least some cases, indium.

Abstract: Disclosed are methods and systems for depositing layers comprising a Group 13 element on a surface of a substrate via contacting the substrate with at least a vapor-phase first precursor and a vapor-phase second precursor comprising an alkyl halide. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, and metal-insulator-metal (MIM).

Abstract: Methods for depositing a molybdenum nitride film on a surface of a substrate are disclosed. The methods may include: providing a substrate into a reaction chamber; and depositing a molybdenum nitride film directly on the surface of the substrate by performing one or more unit deposition cycles of cyclical deposition process, wherein a unit deposition cycle may include, contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor, and contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor. Semiconductor device structures including a molybdenum nitride film are also disclosed.

Abstract: Disclosed herein, inter alia, are methods of making and using engineered T cells useful for expressing a chimeric antigen receptor (CAR) targeted to a cell surface protein (e.g., a CAR targeted to IL13R?2, which is highly expressed on glioblastoma cells).

Abstract: Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.