Patents by Inventor Qianqian Bu

Qianqian Bu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10283355
    Abstract: The present disclosure provides a method for manufacturing a poly-silicon layer. The method for manufacturing the poly-silicon layer comprises steps of: depositing a porous metal film on a microcrystalline silicon layer of a base substrate; immersing the base substrate deposited with the porous metal film into an etching liquid comprising hydrogen fluoride and oxidants for etching the microcrystalline silicon layer; after the microcrystalline silicon layer has been etched successfully, removing the metal film with an acid solution and washing the microcrystalline silicon layer with a deionized water subsequently so as to obtain a processed microcrystalline silicon layer; and depositing an amorphous silicon layer on the processed microcrystalline silicon layer and subjecting the amorphous silicon layer to laser annealing treatment so as to obtain the poly-silicon layer.
    Type: Grant
    Filed: September 26, 2017
    Date of Patent: May 7, 2019
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Qianqian Bu
  • Publication number: 20180122634
    Abstract: The present disclosure provides a method for manufacturing a poly-silicon layer. The method for manufacturing the poly-silicon layer comprises steps of: depositing a porous metal film on a microcrystalline silicon layer of a base substrate; immersing the base substrate deposited with the porous metal film into an etching liquid comprising hydrogen fluoride and oxidants for etching the microcrystalline silicon layer; after the microcrystalline silicon layer has been etched successfully, removing the metal film with an acid solution and washing the microcrystalline silicon layer with a deionized water subsequently so as to obtain a processed microcrystalline silicon layer; and depositing an amorphous silicon layer on the processed microcrystalline silicon layer and subjecting the amorphous silicon layer to laser annealing treatment so as to obtain the poly-silicon layer.
    Type: Application
    Filed: September 26, 2017
    Publication date: May 3, 2018
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Qianqian BU
  • Patent number: 9748398
    Abstract: A thin film transistor, its manufacturing method, and a display device are provided. The method comprises: forming a gate metal layer (35), forming a step-like gate structure (352) by one patterning process; performing a first ion implantation procedure to forming a first heavily doped area (39a) and a second heavily doped area (39b), the first heavily doped area (39a) being separated apart from the second heavily doped area (39b) by a first length; forming a gate electrode (353) from the step-like gate structure (352); performing a second ion implantation procedure to form a first lightly doped area (38a) and a second lightly doped area (38b), the first lightly doped area (38a) being separated apart from the second lightly doped area (38b) by a second length less than the first length. By the above method, the process for manufacturing the LTPS TFT having the lightly doped source/drain structure can be simplified.
    Type: Grant
    Filed: September 28, 2014
    Date of Patent: August 29, 2017
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Qianqian Bu, Wei Guo
  • Patent number: 9748284
    Abstract: Embodiments of the present invention provide a thin film transistor, a method for fabricating the same and an array substrate. The thin film transistor comprises a base substrate and an active region and a plurality of reflective plates formed on the base substrate, wherein the plurality of reflective plates are spaced apart from each other and provided at least at positions corresponding to the active region, the active region comprises polysilicon, and the polysilicon in the active region is formed by irradiating an amorphous silicon layer with laser emitted from a side of the amorphous silicon layer away from the reflective plates.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: August 29, 2017
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Qianqian Bu
  • Publication number: 20170236857
    Abstract: The present disclosure provides a photoelectric conversion array substrate, its manufacturing method and a photoelectric conversion device. The photoelectric conversion array substrate includes a TFT arranged on a base substrate and a photodiode connected to the TFT. A photosensitive surface of the photodiode is a convex surface.
    Type: Application
    Filed: October 19, 2015
    Publication date: August 17, 2017
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventor: Qianqian BU
  • Publication number: 20160358952
    Abstract: Embodiments of the present invention provide a thin film transistor, a method for fabricating the same and an array substrate. The thin film transistor comprises a base substrate and an active region and a plurality of reflective plates formed on the base substrate, wherein the plurality of reflective plates are spaced apart from each other and provided at least at positions corresponding to the active region, the active region comprises polysilicon, and the polysilicon in the active region is formed by irradiating an amorphous silicon layer with laser emitted from a side of the amorphous silicon layer away from the reflective plates.
    Type: Application
    Filed: April 14, 2016
    Publication date: December 8, 2016
    Inventor: Qianqian BU
  • Patent number: 9377539
    Abstract: An X-ray detection board and a manufacture method thereof, and an X-ray detection device are disclosed in the embodiments of the present invention. The X-ray detection board comprises: a substrate; photoelectric conversion devices disposed on the substrate; a conversion layer disposed on the photoelectric conversion devices and configured to convert X-rays into visible light; and a packaging layer disposed on the conversion layer and having a plurality of transmission windows, wherein the photoelectric conversion devices correspond in position to the transmission windows, respectively, and wherein condenser lenses for condensing the light converted by the conversion layer are disposed on sides of the photoelectric conversion devices facing the transmission windows. A light condensing effect is improved by use of the condenser lenses such as microlenses so that more light can be projected upon the photoelectric conversion devices through the condenser lenses.
    Type: Grant
    Filed: October 20, 2014
    Date of Patent: June 28, 2016
    Assignee: BOE Technology Group Co., Ltd.
    Inventors: Wei Guo, Qianqian Bu, Qingrong Ren, Zhao Kang
  • Publication number: 20160181437
    Abstract: A thin film transistor, its manufacturing method, and a display device are provided. The method comprises: forming a gate metal layer (35), forming a step-like gate structure (352) by one patterning process; performing a first ion implantation procedure to forming a first heavily doped area (39a) and a second heavily doped area (39b), the first heavily doped area (39a) being separated apart from the second heavily doped area (39b) by a first length; forming a gate electrode (353) from the step-like gate structure (352); performing a second ion implantation procedure to form a first lightly doped area (38a) and a second lightly doped area (38b), the first lightly doped area (38a) being separated apart from the second lightly doped area (38b) by a second length less than the first length. By the above method, the process for manufacturing the LTPS TFT having the lightly doped source/drain structure can be simplified.
    Type: Application
    Filed: September 28, 2014
    Publication date: June 23, 2016
    Applicant: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Qianqian BU, Wei GUO
  • Publication number: 20150378032
    Abstract: An X-ray detection board and a manufacture method thereof, and an X-ray detection device are disclosed in the embodiments of the present invention. The X-ray detection board comprises: a substrate; photoelectric conversion devices disposed on the substrate; a conversion layer disposed on the photoelectric conversion devices and configured to convert X-rays into visible light; and a packaging layer disposed on the conversion layer and having a plurality of transmission windows, wherein the photoelectric conversion devices correspond in position to the transmission windows, respectively, and wherein condenser lenses for condensing the light converted by the conversion layer are disposed on sides of the photoelectric conversion devices facing the transmission windows. A light condensing effect is improved by use of the condenser lenses such as microlenses so that more light can be projected upon the photoelectric conversion devices through the condenser lenses.
    Type: Application
    Filed: October 20, 2014
    Publication date: December 31, 2015
    Inventors: Wei Guo, Qianqian Bu, Qingrong Ren, Zhao Kang
  • Publication number: 20150295094
    Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and a display device are provided. The method for manufacturing the thin film transistor including: forming an active layer; forming an etch barrier layer on the active layer at a position for forming interlayer via holes subsequently; forming an insulating layer on the active layer and the etch barrier layer, and forming the interlayer via holes in the insulating layer to expose the etch barrier layer.
    Type: Application
    Filed: July 29, 2013
    Publication date: October 15, 2015
    Inventors: Qingrong Ren, Wei Guo, Qianqian Bu, Lei Zhao, Lu Wang, Zhiqiang Jiang