Abstract: An integrated circuit includes a first region including a first set of transistors that include a first set of active regions having a first threshold voltage, the first set of transistors in a first portion of a level shifter circuit, the first portion of the level shifter circuit being coupled to a first voltage supply. The integrated circuit further includes a second region adjacent to the first region. The second region includes a second set of transistors that include a second set of active regions having a second threshold voltage different from the first threshold voltage, and the second set of transistors being in a second portion of the level shifter circuit.

Abstract: A method of manufacturing an IC structure includes configuring each of an n-well and a p-well in a first IC die to have a first portion extending in a first direction and second and third portions extending from the first portion in a second direction perpendicular to the first direction, and forming IC devices including a first pickup structure electrically connected to the n-well and a second pickup structure electrically connected to the p-well. Forming the IC devices includes forming a PMOS transistor in the second or third portion of the n-well and forming an NMOS transistor in the second or third portion of the p-well.

Abstract: An integrated circuit (IC) device includes at least one circuit having an input and an output, and an output connector electrically coupled to the output. The circuit further includes a plurality of transistors electrically coupled with each other between the input and the output. The output is in a first metal layer. The output connector includes a first conductive pattern in the first metal layer, and a second conductive pattern in a second metal layer different from the first metal layer. The second conductive pattern electrically couples the output to the first conductive pattern.

Abstract: A scan flip-flop circuit includes first and second I/O nodes, a flip-flop circuit, a selection circuit configured to receive a scan direction signal and including input terminals coupled to the first and second I/O nodes and an output terminal coupled to an input terminal of the flip-flop circuit, and first and second drivers configured to receive the scan direction signal and a scan enable signal, each including an input terminal coupled to an output terminal of the flip-flop circuit and an output terminal coupled to a respective first or second input terminal of the selection circuit. Responsive to the scan direction and scan enable signals, one of the first driver is configured to output a first signal responsive to a second signal received at the second input terminal or the second driver is configured to output a third signal responsive to a fourth signal received at the first input terminal.

Abstract: An integrated circuit includes a clocking transistor, a first enabling transistor, a second enabling transistor, a branch-one transistor, and a branch-two transistor. The first enabling transistor is coupled between the clocking transistor and a first node. The second enabling transistor is coupled between the clocking transistor and a second node. The branch-one transistor is coupled between a first power supply and the first node. The gate terminal of the branch-one transistor is connected to the second node. The branch-two transistor is coupled between the first power supply and the second node. The gate terminal of the branch-two transistor is connected to the first node. Each of the clocking transistor, the first enabling transistor, and the second enabling transistor is a first-type transistor of a reduced threshold. Each of the branch-one transistor and the branch-two transistor is a second-type transistor of a default threshold.

Abstract: An integrated circuit includes an input circuit coupled to a first voltage supply, and configured to receive a first input signal, and to generate at least a second or a third input signal, and a level shifter circuit coupled to the input circuit and a second voltage supply, and configured to receive a first enable signal, the second or third input signal, and to generate a first signal responsive to the first enable signal, the second or third input signal. The input circuit includes a first set of transistors having a first threshold voltage. The first set of transistors includes a first set of active regions extending in a first direction. The level shifter circuit includes a second set of transistors having a second threshold voltage. The second set of transistors includes a second set of active regions extending in the first direction.

Abstract: A scan flip-flop circuit includes a selection circuit including first and second input terminals coupled to first and second I/O nodes, a flip-flop circuit coupled to the selection circuit, a first driver coupled between the flip-flop circuit and the first I/O node, and a second driver coupled between the flip-flop circuit and the second I/O node. The selection circuit and drivers receive a scan direction signal. In response to a first logic level of the scan direction signal, the selection circuit responds to a first signal received at the first input terminal, and the second driver outputs a second signal responsive to a flip-flop circuit output signal. In response to a second logic level of the scan direction signal, the selection circuit responds to a third signal received at the second input terminal, and the first driver outputs a fourth signal responsive to the flip-flop circuit output signal.

Abstract: A semiconductor device includes first active regions extending in a first direction and having a first number of fins; second active regions extending in the first direction and having a second number of fins, the second number of fins being less than the first number of fins; data transistors formed at least in part in the first active regions; and scan transistors formed at least in part in the second active regions. The data transistors and the scan transistors are included in a scan insertion D flip-flop (SDFQ) that includes a multiplexer serially connected at an internal node to a D flip-flop (FF), the multiplexer including the data transistors for selecting a data input signal, and including the scan transistors for selecting a scan input signal.

Abstract: A method of forming a semiconductor device includes forming a first row of transistors extending in a first direction and including dummy transistors and active transistors. The first row includes, in a sequence from a first end to a second end, at least a first dummy group, a first delay cell, a second delay cell, and a second dummy group. The first dummy group is formed of one or more dummy transistors. The second dummy group is formed of one or more dummy transistors. The first delay cell is formed of active transistors configured as a basic inverter and a float-resistant inverter. The second delay cell is formed of active transistors configured as at least one inverter. The first row is free of dummy transistors between the first delay cell and the second delay cell.

Abstract: A semiconductor device has a cell region including active regions that extend in a first direction and in which are formed components of transistors. The transistors of the cell region are arranged to function as a scan insertion D flip flop (SDFQ). The SDFQ includes a multiplexer serially connected at an internal node to a D flip-flop (FF). The transistors of the multiplexer include data transistors for selecting a data input signal, the data transistors having a first channel configuration with a first channel size, and scan transistors of the multiplexer for selecting a scan input signal, the scan transistors having a second channel configuration with a second channel size. The second channel size is smaller than the first channel size.

Abstract: An integrated circuit includes a first time delay circuit, a second time delay circuit, and a master-slave flip-flop having a gated input circuit and a transmission gate. The transmission gate is configured to receive the first clock signal and the second clock signal to control a transmission state of the transmission gate. The gated input circuit is configured to have an input transmission state controlled by the third clock signal at the second output of the second time delay circuit. The second time delay circuit further includes a second gate-conductor and a second gate via-connector in direct contact with the second gate-conductor.

Abstract: A delay-enhanced inverter circuit (DE-inverter) includes: a non-delay-enhanced inverter circuit (NE-inverter) having an output at a first node and an input at a second node; and a capacitive device feedback-coupled between the first node and the second node. The capacitive device includes: a first positive-channel metal-oxide (PMOS) field-effect transistor (FET) (PFET) feedback-coupled between the first node and the second node, the first PFET having a capacitor-configuration; and a first negative-channel metal-oxide (NMOS) FET (NFET) feedback-coupled feedback-between the first node and the first reference voltage, the first NFET having a capacitor-configuration.

Abstract: A semiconductor device includes a first dummy group having a first set of dummy transistors; a first delay cell having a first set of active transistors; a second delay cell having a second set of active transistors; a second dummy group having a second set of dummy transistors; and relative to a first direction the first and second dummy groups and the first and second delay cells being arranged in a first sequence arranged as the first dummy group, the first delay cell, the second delay cell, and the second dummy group; and the first and second delay cells being free from having another dummy group therebetween.

Abstract: An integrated circuit includes an input circuit coupled to a first voltage supply, and configured to receive a first input signal, and to generate at least a second or a third input signal, and a level shifter circuit coupled to the input circuit and a second voltage supply, and configured to receive a first enable signal, the second or third input signal, and to generate a first signal responsive to the first enable signal, the second or third input signal. The input circuit includes a first set of transistors having a first threshold voltage. The first set of transistors includes a first set of active regions extending in a first direction. The level shifter circuit includes a second set of transistors having a second threshold voltage. The second set of transistors includes a second set of active regions extending in the first direction.

Abstract: A method of forming a semiconductor device includes forming active regions, forming S/D regions, forming MD contact structures and forming gate lines resulting in corresponding transistors that define a first time delay circuit having a first input configured to receive a first clock signal and having a first output configured to generate a second clock signal from the first clock signal; and corresponding transistors that define a second time delay circuit having a second input configured to receive the second clock signal and having a second output configured to generate a third clock signal from the first clock signal; forming a first gate via-connector in direct contact with the first gate line atop the first-type active region in the first area; and forming a second gate via-connector in direct contact with the second gate line atop the second-type active region in the second area.

Abstract: A scan flip-flop circuit includes a selection circuit including first and second input terminals coupled to first and second I/O nodes, a flip-flop circuit coupled to the selection circuit, a first driver coupled between the flip-flop circuit and the first I/O node, and a second driver coupled between the flip-flop circuit and the second I/O node. The selection circuit and drivers receive a scan direction signal. In response to a first logic level of the scan direction signal, the selection circuit responds to a first signal received at the first input terminal, and the second driver outputs a second signal responsive to a flip-flop circuit output signal. In response to a second logic level of the scan direction signal, the selection circuit responds to a third signal received at the second input terminal, and the first driver outputs a fourth signal responsive to the flip-flop circuit output signal.

Abstract: A method of manufacturing an IC structure includes configuring each of an n-well and a p-well in a first IC die to have a first portion extending in a first direction and second and third portions extending from the first portion in a second direction perpendicular to the first direction, and forming IC devices including a first pickup structure electrically connected to the n-well and a second pickup structure electrically connected to the p-well. Forming the IC devices includes forming a PMOS transistor in the second or third portion of the n-well and forming an NMOS transistor in the second or third portion of the p-well.

Abstract: An integrated circuit (IC) device includes at least one circuit having an input and an output, and an output connector electrically coupled to the output. The circuit further includes a plurality of transistors electrically coupled with each other between the input and the output. The output is in a first metal layer. The output connector includes a first conductive pattern in the first metal layer, and a second conductive pattern in a second metal layer different from the first metal layer. The second conductive pattern electrically couples the output to the first conductive pattern.

Abstract: A semiconductor device includes a first dummy group having a first set of dummy transistors; a first delay cell having a first set of active transistors; a second delay cell having a second set of active transistors; a second dummy group having a second set of dummy transistors; and relative to a first direction the first and second dummy groups and the first and second delay cells being arranged in a first sequence arranged as the first dummy group, the first delay cell, the second delay cell, and the second dummy group; and the first and second delay cells being free from having another dummy group therebetween.

Abstract: An integrated circuit includes a clocking transistor, a first enabling transistor, a second enabling transistor, a branch-one transistor, and a branch-two transistor. The first enabling transistor is coupled between the clocking transistor and a first node. The second enabling transistor is coupled between the clocking transistor and a second node. The branch-one transistor is coupled between a first power supply and the first node. The gate terminal of the branch-one transistor is connected to the second node. The branch-two transistor is coupled between the first power supply and the second node. The gate terminal of the branch-two transistor is connected to the first node. Each of the clocking transistor, the first enabling transistor, and the second enabling transistor is a first-type transistor of a reduced threshold. Each of the branch-one transistor and the branch-two transistor is a second-type transistor of a default threshold.