Abstract: The present application discloses a method for cleaning a process chamber and an application thereof. The method for cleaning a process chamber includes: (a) turning on a remote plasma system, exciting a clean-process gas into plasma, and supplying remote plasma to the process chamber; (b) after operation of the remote plasma system reaches a stable state, turning on a radio-frequency power supply system in the process chamber, re-exciting and enhancing the remote plasma positioned in the process chamber by the radio-frequency power supply system, and using both the remote plasma system and the radio-frequency power supply system for jointly acting and cleaning the process chamber during a period of cleaning time; (c) when the cleaning of the process chamber is completed, firstly turning off the radio-frequency power supply system in the process chamber; and (d) then turning off the remote plasma system.

Abstract: The present disclosure provides a structure and a method for solving parasitic plasma in a plasma processing apparatus, which belong to the field of plasma processing apparatus. In the structure, a first gas channel is in communication with a narrow-bore insulating tube and a second gas channel. The narrow-bore insulating tube is configured to feed a process gas into a gas distribution assembly. An on-off valve is disposed between the second gas channel and the first gas channel. The second gas channel is configured to feed a cleaning gas into the gas distribution assembly. Therefore, on the one hand, the on-off valve can be closed before the processing, and a cleaning gas with a preset pressure can be fed into the wide-bore insulating tube and the second gas channel, thereby forming a relatively high-pressure environment in the wide-bore insulating tube and the second gas channel.