Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract: Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions.

Abstract: An electroless plating method and composition for depositing Co or Co alloys onto a metal-based substrate in manufacture of microelectronic devices, involving a source of Co ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and an oxime-based compound stabilizer.

Abstract: A method for electrolessly filling a stacked memory cell interconnect feature comprising electroless deposition from a composition comprising Co ions and a reducing agent by bottom-up filling initiated by reduction to Co metal on an electrically conducting bottom of the feature. An electroless deposition composition for electrolessly depositing Co in a high aspect ratio stacked memory cell interconnect feature, the composition comprising water, Co ions, a complexing agent, a buffering agent, a borane-based reducing agent component, and a hypophosphite reducing agent component. There is a concentration ratio of borane-based reducing agent to hypophosphite reducing agent of less than about 0.5.

Abstract: An electroless plating method and composition for depositing Co, Ni, or alloys thereof onto a metal-based substrate in manufacture of microelectronic devices, involving a source of deposition ions selected from the group consisting of Co ions and Ni ions, a reducing agent for reducing the depositions ions to metal onto the substrate, and a hydrazine-based leveling agent.

Abstract: A multilayer metal cap over a metal-filled interconnect feature in a dielectric layer for incorporation into a multilayer integrated circuit device, and a method for forming the cap.

Abstract: A tellurite-based glass composition for use in EDFAs exhibits higher phonon energy without sacrificing optical, thermal or chemical durability properties. The introduction of boron oxide (B2O3) into the Er3+-doped tellurite glasses increases the phonon energy from typically 785 cm?1 up to 1335 cm?1. The inclusion of additional glass components such as Al2O3 has been shown to enhance the thermal stability and particularly the chemical durability of the boro-tellurite glasses. Er:Yb codoping of the glass does further enhance its gain characteristics.

Abstract: A tellurite-based glass composition for use in EDFAs exhibits higher phonon energy without sacrificing optical, thermal or chemical durability properties. The introduction of boron oxide (B2O3) into the Er3+-doped tellurite glasses increases the phonon energy from typically 785 cm−1 up to 1335 cm−1. The inclusion of additional glass components such as Al2O3 has been shown to enhance the thermal stability and particularly the chemical durability of the boro-tellurite glasses. Er:Yb codoping of the glass does further enhance its gain characteristics.