Patents by Inventor Quoc Vinh Truong
Quoc Vinh Truong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11041253Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.Type: GrantFiled: May 29, 2018Date of Patent: June 22, 2021Assignee: Svagos Technik, Inc.Inventors: Visweswaren Sivaramakrishnan, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong, Jean R. Vatus
-
Publication number: 20190003076Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.Type: ApplicationFiled: May 29, 2018Publication date: January 3, 2019Inventors: Visweswaren Sivaramakrishnan, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong, Jean R. Vatus
-
Patent number: 9982363Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.Type: GrantFiled: February 3, 2016Date of Patent: May 29, 2018Assignee: Crystal Solar, IncorporatedInventors: Visweswaren Sivaramakrishnan, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong, Jean R. Vatus
-
Patent number: 9920451Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: March 17, 2014Date of Patent: March 20, 2018Assignee: Crystal Solar IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
-
Patent number: 9556522Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: March 4, 2014Date of Patent: January 31, 2017Assignee: Crystal Solar IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
-
Publication number: 20160222544Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.Type: ApplicationFiled: February 3, 2016Publication date: August 4, 2016Inventors: Visweswaren Sivaramakrishnan, Tirunelveli S. Ravi, Andrzej Kaszuba (Deceased), Quoc Vinh Truong, Jean R. Vatus
-
Patent number: 9255346Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.Type: GrantFiled: May 29, 2012Date of Patent: February 9, 2016Assignee: Crystal Solar, IncorporatedInventors: Visweswaren Sivaramakrishnan, Tirunelveli S. Ravi, Andrzej Kaszuba, Bozena Kaszuba, Quoc Vinh Truong, Jean R. Vatus
-
Publication number: 20150361555Abstract: A CVD reactor for depositing material on substrates may comprise: a vacuum chamber; at least two substrate carriers arranged in parallel in a row within the vacuum chamber, each of the at least two substrate carriers comprising mounting positions for a plurality of substrates, the mounting positions being on the walls of channels configured for flowing process gases, the channels being in parallel planes within all of the at least two substrate carriers; a planar electrically resistive heater between every two adjacent substrate carriers in the row; and planar heaters at both ends of the row. Furthermore, CVD reactor chambers with three channel substrate carriers and/or gas preheat structure are described herein.Type: ApplicationFiled: June 12, 2015Publication date: December 17, 2015Inventors: Visweswaren Sivaramakrishnan, Quoc Vinh Truong, Timothy N. Kleiner, Tirunelveli S. Ravi
-
Publication number: 20140311403Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the chamber walls. Sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: ApplicationFiled: March 17, 2014Publication date: October 23, 2014Applicant: Crystal Solar, IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
-
Patent number: 8673081Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: February 25, 2010Date of Patent: March 18, 2014Assignee: Crystal Solar, Inc.Inventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
-
Publication number: 20130032084Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.Type: ApplicationFiled: May 29, 2012Publication date: February 7, 2013Applicant: Crytal Solar, IncorporatedInventors: Visweswaren Sivaramakrishnan, Tirunelveli S. Ravi, Quoc Vinh Truong, Jean R. Vatus, Visweswaren Sivaramakrishnan
-
Patent number: 8298629Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: GrantFiled: February 25, 2009Date of Patent: October 30, 2012Assignee: Crystal Solar IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
-
Publication number: 20100263587Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize deposition on the walls of the chamber. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: ApplicationFiled: February 25, 2010Publication date: October 21, 2010Applicant: Crystal Solar, IncorporatedInventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong
-
Publication number: 20100215872Abstract: An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart to minimize the process volume. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. Purge gases flow outside the wafer sleeve within a reactor chamber to minimize wall deposition. In addition, sequencing of the illumination of the individual lamps in the lamp module may further improve the linearity of variation in deposition rates within the wafer sleeve. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration. Combining lamp sequencing with cross-flow processing in a multiple reactor system enables high throughput deposition with good film uniformities and efficient use of process gases.Type: ApplicationFiled: February 25, 2009Publication date: August 26, 2010Applicant: CRYSTAL SOLAR, INC.Inventors: Visweswaren Sivaramakrishnan, Kedarnath Sangam, Tirunelveli S. Ravi, Andrzej Kaszuba, Quoc Vinh Truong