Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.

Abstract: A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract: A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.

Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

Abstract: An ion energy analyzer for determining an ion energy distribution of a plasma and comprising an entrance grid, a selection grid, and an ion collector. The entrance grid includes a first plurality of openings dimensioned to be less than a Debye length for the plasma. The ion collector is coupled to the entrance grid via a first voltage source. The selection grid is positioned between the entrance grid and the ion collector and is coupled to the entrance grid via a second voltage source. An ion current meter is coupled to the ion collector to measure an ion flux onto the ion collector and transmit a signal related thereto.

Abstract: A plasma-tuning rod configured for use with a microwave processing system. The waveguide includes a first dielectric portion having a first outer diameter. A second dielectric portion, with a second outer diameter greater than the first outer diameter surrounds the first dielectric portion, and may be coaxial therewith. In some embodiments of the present invention, a dielectric constant of the first dielectric portion may be equal to or greater than a dielectric constant of the second dielectric portion.

Abstract: A method of selectively activating a chemical process using a DC pulse etcher. A processing chamber includes a substrate therein for chemical processing. The method includes coupling energy into a process gas within the processing chamber so as to produce a plasma containing positive ions. A pulsed DC bias is applied to the substrate, which is positioned on a substrate support within the processing chamber. Periodically, the substrate is biased between first and second bias levels, wherein the first bias level is more negative than the second bias level. When the substrate is biased to the first bias level, mono-energetic positive ions are attracted from plasma toward the substrate, the mono-energetic positive ions being selective so as to enhance a selected chemical etch process.

Abstract: A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.

Abstract: A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract: A surface wave plasma (SWP) source couples pulsed microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). To prevent impingement of the microwave energy onto the surface of a substrate when plasma density is low between pulses, an ICP source, such as a helical inductive source, a planar RF coil, or other inductively coupled source, is provided between the SWP source and the substrate to produce plasma that is opaque to microwave energy. The ICP source can also be pulsed in synchronism with the pulsing of the MW plasma in phase with the ramping up of the MW pulses. The ICP also adds an edge dense distribution of plasma to a generally chamber centric MW plasma to improve plasma uniformity.

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated to include a semiconductor junction, and wherein a capacitance of the chamber component is varied when a voltage is applied across the semiconductor junction.

Abstract: The invention provides a method of processing a wafer using Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-Input/Multi-Output (IEC-MIMO) models and libraries that can include one or more measurement procedures, one or more IEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple IEC etch sequences. The multiple layers and/or the multiple IEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.