Patents by Inventor Rafael I. Chikovani

Rafael I. Chikovani has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor light emitter based on gallium nitride and process for manufacture thereof
    Patent number: 4608581
    Abstract: The semiconductor light emitter comprises a substrate (I) from a single-crystalline material transparent within the visible range of spectrum. Onto the substrate (I) there are deposited: a layer (2) of gallium nitride of the n-type conductivity and, above it, a layer (3) of gallium nitride alloyed with acceptor dopes. The emitter also comprises two metallic electrodes (5) and (6). Onto the electrode (5) a negative-polarity voltage is applied, onto the electrode (6)--a positive-polarity voltage. According to the present invention, over the layer (3) of gallium nitride alloyed with acceptor dopes a layer (4) of an insulating material is formed. The process for manufacturing the semiconductor light emitter comprises epitaxially growing, on a substrate of a single-crystalline material transparent within the visible range of spectrum, a layer of gallium nitride of the n-type conductivity; epitaxially growing, on this layer, a layer of gallium nitride alloyed by acceptor dopes, and forming two electrodes.
    Type: Grant
    Filed: September 1, 1983
    Date of Patent: August 26, 1986
    Inventors: Givi D. Bagratishvili, Rusudan B. Dzhanelidze, Vladimir V. Zorikov, Vissarion M. Mikhelashvili, Iosif E. Pekar, Rafael I. Chikovani, Manana A. Chkhaidze, Svetlana Z. Akopova, Viktor B. Bogdanovich, Sergei V. Svechnikov, Revaz A. Charmakadze
  • Semiconductor light-emitting device
    Patent number: 4153905
    Abstract: A semiconductor light-emitting device comprising a sapphire substrate, an epitaxial layer of monocrystalline semiconductor p-type gallium nitride deposited on the substrate, and a layer of semiconductor-type aluminum nitride, deposited on the semiconductor gallium nitride layer and forming an injecting heterojunction therewith. The device emits bright blue light.
    Type: Grant
    Filed: March 28, 1978
    Date of Patent: May 8, 1979
    Inventors: Revaz A. Charmakadze, Rafael I. Chikovani