Patents by Inventor Raimund Oberschmid
Raimund Oberschmid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10132855Abstract: A method can be used for measuring at least one optoelectronic component arranged on a connection carrier. The method includes exciting an electromagnetic oscillating circuit, which is formed by the optoelectronic component and the connection carrier, thus exciting the optoelectronic component in such a way that the optoelectronic component emits electromagnetic radiation, and measuring at least one electro-optical property of the optoelectronic component.Type: GrantFiled: March 6, 2014Date of Patent: November 20, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Robert Schulz, Anton Vogl, Raimund Oberschmid, Roland Zeisel, Michael Dietz
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Publication number: 20160003890Abstract: A method can be used for measuring at least one optoelectronic component arranged on a connection carrier. The method includes exciting an electromagnetic oscillating circuit, which is formed by the optoelectronic component and the connection carrier, thus exciting the optoelectronic component in such a way that the optoelectronic component emits electromagnetic radiation, and measuring at least one electro-optical property of the optoelectronic component.Type: ApplicationFiled: March 6, 2014Publication date: January 7, 2016Inventors: Robert Schulz, Anton Vogl, Raimund Oberschmid, Roland Zeisel, Michael Dietz
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Publication number: 20150241004Abstract: A lighting device has a carrier plate having a reflective assembly surface on which a plurality of light emitting semiconductor chips spaced apart from each other is arranged. A translucent or transparent emission plate is arranged downstream of the light emitting semiconductor chips in the emission direction and has a light decoupling surface facing away from the light emitting semiconductor chips. The emission plate has a plurality of recesses which are each arranged after at least one semiconductor chip. Each of the recesses has a diffusor material and/or a wavelength conversion material on the inner surface facing the semiconductor chips, and spaced apart from the light emitting semiconductor chips.Type: ApplicationFiled: August 10, 2012Publication date: August 27, 2015Applicant: OSRAM GMBHInventors: Raimund Oberschmid, Martin Moeck
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Patent number: 8974087Abstract: A luminous device with a semiconductor light source and a light-transmissive converter element including a wavelength-converting phosphor sensitive to the light emitted by the semiconductor light source is disclosed. The semiconductor light source can be at least partly covered by the converter element and the converter element is movable such that the proportion of light which is wavelength-converted by the converter element is adjustable depending on the position of the converter element.Type: GrantFiled: June 28, 2011Date of Patent: March 10, 2015Assignee: OSRAM Gesellschaft mit beschraenkter HaftungInventors: Martin Moeck, Raimund Oberschmid
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Patent number: 8598604Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.Type: GrantFiled: September 27, 2006Date of Patent: December 3, 2013Assignee: Osram Opto Semiconductors GmbHInventors: Dominik Eisert, Norbert Linder, Raimund Oberschmid, Dirk Berben, Frank Jermann, Martin Zachau
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Patent number: 8581279Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).Type: GrantFiled: June 2, 2006Date of Patent: November 12, 2013Assignee: OSRAM Opto Semiconductors GmbHInventors: Johannes Baur, Volker Härle, Berthold Hahn, Andreas Weimar, Raimund Oberschmid, Ewald Karl Michael Guenther, Franz Eberhard, Markus Richter, Jörg Strauss
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Patent number: 8368092Abstract: A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).Type: GrantFiled: January 25, 2005Date of Patent: February 5, 2013Assignee: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Berthold Hahn, Volker Härle, Raimund Oberschmid, Andreas Weimar
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Publication number: 20110317398Abstract: Various embodiments provide a luminous device, including at least one semiconductor light source and at least one light-transmissive converter element including a wavelength-converting phosphor sensitive to the light emitted by the semiconductor light source, wherein the semiconductor light source can be at least partly covered by the converter element, and the converter element is movable such that a proportion of a light wavelength-converted by means of the converter element is adjustable depending on a position of the converter element.Type: ApplicationFiled: June 28, 2011Publication date: December 29, 2011Applicant: OSRAM Gesellschaft mit beschraenkter HaftungInventors: Martin Moeck, Raimund Oberschmid
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Patent number: 7742677Abstract: A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.Type: GrantFiled: June 4, 2007Date of Patent: June 22, 2010Assignee: Osram Opto Semiconductors GmbHInventors: Franz Eberhard, Uwe Strauss, Ulrich Zehnder, Andreas Weimar, Raimund Oberschmid
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Publication number: 20090261366Abstract: An optoelectronic component with a semiconductor body that comprises an active semiconductor layer sequence is disclosed, which is suitable for generating electromagnetic radiation of a first wavelength that is emitted from a front face of the semiconductor body. The component also comprises a first wavelength conversion substance following the semiconductor body in its direction of emission, which converts radiation of the first wavelength into radiation of a second wavelength different from the first wavelength, and a first selectively reflecting layer between the active semiconductor layer sequence and the first wavelength conversion substance that selectively reflects radiation of the second wavelength and is transparent to radiation of the first wavelength.Type: ApplicationFiled: September 27, 2006Publication date: October 22, 2009Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Dominik Eisert, Norbert Linder, Raimund Oberschmid, Dirk Berben, Frank Jermann, Martin Zachau
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Publication number: 20090212307Abstract: In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).Type: ApplicationFiled: June 2, 2006Publication date: August 27, 2009Inventors: Johannes Baur, Volker Hárle, Berthold Hahn, Andreas Weimar, Raimund Oberschmid, Ewald Karl Michael Guenther, Franz Eberhard, Markus Richter, Jörg Strauss
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Patent number: 7306960Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.Type: GrantFiled: December 19, 2005Date of Patent: December 11, 2007Assignee: Osram GmbHInventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
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Publication number: 20070278508Abstract: A thin-film LED comprising an active layer (7) made of a nitride compound semiconductor, which emits electromagnetic radiation (19) in a main radiation direction (15). A current expansion layer (9) is disposed downstream of the active layer (7) in the main radiation direction (15) and is made of a first nitride compound semiconductor material. The radiation emitted in the main radiation direction (15) is coupled out through a main area (14), and a first contact layer (11, 12, 13) is arranged on the main area (14). The transverse conductivity of the current expansion layer (9) is increased by formation of a two-dimensional electron gas or hole gas. The two-dimensional electron gas or hole gas is advantageously formed by embedding at least one layer (10) made of a second nitride compound semiconductor material in the current expansion layer (9).Type: ApplicationFiled: January 25, 2005Publication date: December 6, 2007Inventors: Johannes Baur, Berthold Hahn, Volker Harle, Raimund Oberschmid, Andreas Weimar
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Publication number: 20070238210Abstract: A method for producing an optoelectronic component is disclosed. The method includes the steps of providing a substrate, applying a semiconductor layer sequence to the substrate, applying at least two current expansion layers to the semiconductor layer sequence, applying and patterning a mask layer, patterning the second current expansion layer by means of an etching process during which sidewalls of the mask layer are undercut, patterning the first current expansion layer by means of an etching process during which the sidewalls of the mask layer are undercut at least to a lesser extent than during the patterning of the second current expansion layer, and removing the mask layer.Type: ApplicationFiled: June 4, 2007Publication date: October 11, 2007Inventors: Franz Eberhard, Uwe Strauss, Ulrich Zehnder, Andreas Weimar, Raimund Oberschmid
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Patent number: 7227191Abstract: An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).Type: GrantFiled: May 2, 2005Date of Patent: June 5, 2007Assignee: Osram Opto Semiconductors GmbHInventors: Franz Eberhard, Uwe Strauss, Ulrich Zehnder, Andreas Weimar, Raimund Oberschmid
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Publication number: 20060138439Abstract: The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the window layer available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.Type: ApplicationFiled: December 19, 2005Publication date: June 29, 2006Inventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
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Patent number: 7026657Abstract: The invention concerns a light-emitting diode chip (1) comprising a radiation-emitting active region (32) and a window layer (2). To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region (32) is smaller than the cross-sectional area of the window layer (2) available for the decoupling of light. The invention is further directed to a method for fabricating a lens structure on the surface of a light-emitting component.Type: GrantFiled: April 19, 2001Date of Patent: April 11, 2006Assignee: Osram GmbHInventors: Georg Bogner, Siegmar Kugler, Ernst Nirschl, Raimund Oberschmid, Karl-Heinz Schlereth, Olaf Schoenfeld, Norbert Stath, Gerald Neumann
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Publication number: 20050253163Abstract: An optoelectronic component having a semiconductor chip containing a semiconductor layer sequence (6) with a radiation-emitting active zone (4), the semiconductor layer sequence (6) having sidewalls (10). A connection contact (9) is provided for impressing current into the active zone. A first current expansion layer (7) adjoins a semiconductor layer (5) of the semiconductor layer sequence (6) and a second current expansion layer (8) is provided between the semiconductor layer sequence (6) and the connection contact (9). The first current expansion layer (7) has a larger sheet resistance than the second current expansion layer (8) and forms an ohmic contact with the adjoining semiconductor layer (5). The second current expansion layer (8) is applied to a partial region of the first current expansion layer (7) which is at a distance from the sidewalls (10).Type: ApplicationFiled: May 2, 2005Publication date: November 17, 2005Applicant: Osram Opto Semiconductors GmbHInventors: Franz Eberhard, Uwe Strauss, Ulrich Zehnder, Andreas Weimar, Raimund Oberschmid
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Patent number: 6946864Abstract: A measuring arrangement for measuring product parameters of a component in the epitaxial layer (28) of a wafer comprises measuring probe (3) on whose contact side (23) a recess (24) is installed, into which an electrolyte can be poured. The electrolyte produces an electrical connection between a contact body (11), which is charged with a signal from a pulsed-current source, and the surface (22) of the wafer (2). A detector (16) serves for detecting the light which is emitted by the component.Type: GrantFiled: February 19, 2002Date of Patent: September 20, 2005Assignee: Osram GmbHInventors: Wolfgang Gramann, Raimund Oberschmid, Werner Späth, Wolfgang Teich
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Patent number: 6897488Abstract: A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).Type: GrantFiled: November 6, 2001Date of Patent: May 24, 2005Assignee: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Ulrich Jacob, Raimund Oberschmid, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder