Abstract: A current sensor includes a current rail and a magnetic field sensor. The magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail. A first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor. An interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor. A portion of the current rail extends into the second insulation layer and the portion of the current rail is encapsulated by the second insulation layer.

Abstract: A current sensor system includes a magnetic field sensor including a chip plane, a first set of sensor elements sensitive to a first magnetic field component that is aligned in a first direction that is parallel to the chip plane, and a second set of sensor elements sensitive to a second magnetic field component that is aligned in a second direction that is perpendicular to the chip plane; and three conductor structures arranged in parallel to each other and configured to carry a current parallel or antiparallel to a third direction that is perpendicular to the first direction and to the second direction. The three conductor structures generate three magnetic fields based on the current flowing therethrough, where the three magnetic fields produce a first magnetic field distribution of the first magnetic field component and a second magnetic field distribution of the second magnetic field component.

Abstract: A current sensor package, comprises a current path and a sensing device. The sensing device is spaced from the current path, and the sensing device is configured for sensing a magnetic field generated by a current flowing through the current path. Further, the sensing device comprises a sensor element. The sensing device is electrically connected to a conductive trace. An encapsulant extends continuously between the current path and the sensing device.

Abstract: What is disclosed is a hydrogen sensor (100) having a housing (101) that includes a cavity (102) and has a passage opening (103) from the cavity (102) to a gas connection of the hydrogen sensor (100) or an environment, having a first hydrogen sensor element (104), disposed in the cavity (102), for measurement of a hydrogen content in the cavity (102), having a first sorption element (105) for sorption of water and/or water vapor, especially an adsorption element (105) for adsorption of water and/or water vapor, and having a first heater (106) for bakeout of the first sorption element (105), wherein the first sorption element (105) has open pores and is disposed in the passage opening (103).

Abstract: A method is provided for producing a hermetically sealed housing having a semiconductor component. The method comprises introducing a housing having a housing body and a housing cover into a process chamber. The housing cover closes off a cavity of the housing body and is attached in a gas-tight manner to the housing body. At least one opening is formed in the housing. At least one semiconductor component is arranged in the cavity. The method furthermore comprises generating a vacuum in the cavity by evacuating the process chamber, and also generating a predetermined gas atmosphere in the cavity and the process chamber. The method moreover comprises applying sealing material to the at least one opening while the predetermined gas atmosphere prevails in the process chamber.

Abstract: A method for producing sensor devices includes generating a semiconductor wafer having a plurality of sensor chips, wherein each sensor chip comprises a micro-electromechanical systems (MEMS) structure arranged at a main surface of the semiconductor wafer; forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the MEMS structures and forms a cavity above the corresponding MEMS structure; and singulating the semiconductor wafer into a plurality of sensor devices.

Abstract: A sensor package comprises a MEMS sensor chip, a cover arranged over a first main surface of the MEMS sensor chip, said cover being fabricated from a mold compound, and an electrical through contact extending through the cover and to electrically couple the sensor package to a circuit board arranged over the cover.

Abstract: A semiconductor device includes a chip carrier, a first semiconductor chip arranged on the chip carrier, the first semiconductor chip being located in a first electrical potential domain when the semiconductor device is operated, a second semiconductor chip arranged on the chip carrier, the second semiconductor chip being located in a second electrical potential domain different from the first electrical potential domain when the semiconductor device is operated, and an electrically insulating structure arranged between the first semiconductor chip and the second semiconductor chip, which is designed to galvanically isolate the first semiconductor chip and the second semiconductor chip from each other.

Abstract: What is proposed is a current sensor comprising a current rail and comprising a magnetic field sensor, wherein the magnetic field sensor is configured to measure a magnetic field induced by a current flowing through the current rail, wherein a first insulation layer and a second insulation layer are arranged between the current rail and the magnetic field sensor, wherein an interface between the first insulation layer and the second insulation layer is free of a contact with the current rail and/or is free of a contact with the magnetic field sensor.

Abstract: A sensor device includes a sensor chip with a micro-electromechanical systems (MEMS) structure, wherein the MEMS structure is arranged at a main surface of the sensor chip, and a gas-permeable cover arranged over the main surface of the sensor chip, which covers the MEMS structure and forms a cavity above the MEMS structure.

Abstract: An ultrasonic transducer includes at least one ultrasonic transducer element, a semiconductor chip that includes the ultrasonic transducer element, and a housing. The semiconductor chip is arranged in the housing. The semiconductor chip is embedded in a dimensionally stable encapsulation, wherein a contact surface of the dimensionally stable encapsulation is configured for acoustically coupling the ultrasonic transducer to a casing. Additionally, an ultrasonic transducer system and a method for fitting the ultrasonic transducer or ultrasonic transducer system are provided.

Abstract: A gas sensor device contains a cavity delimited by an electrically conductive material and having gas-permeable openings and reflective surfaces, and also a radio-frequency component, including a radio-frequency chip and at least one radio-frequency antenna configured to emit radio-frequency signals into the cavity and to receive radio-frequency signals from the cavity.

Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.

Abstract: A magnetic field sensor having a semiconductor chip is proposed, the semiconductor chip having at least one magnetic field sensor element, the semiconductor chip being embedded in a semiconductor chip encapsulation, having a permanent magnet, the permanent magnet being embedded in a magnet encapsulation, wherein an interface between the semiconductor chip encapsulation and the magnet encapsulation extends as far as a free surface of the magnetic field sensor. Methods for producing a magnetic field sensor are furthermore disclosed.

Abstract: A sensor device contains a busbar, a dielectric shell arranged over the busbar, a dielectric layer arranged over the busbar, and a sensor chip arranged within the dielectric shell, wherein the sensor chip is configured to detect a magnetic field induced by an electric current flowing through the busbar.

Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.

Abstract: A sensor device includes a current conductor designed to carry a measurement current, and a magnetic field sensor chip having a sensor element, wherein the magnetic field sensor chip is designed to detect a magnetic field at the location of the sensor element. The sensor device furthermore includes an encapsulation material, wherein the magnetic field sensor chip is encapsulated by the encapsulation material, and a soft magnet secured to the encapsulation material and designed to concentrate the magnetic field at the location of the sensor element. The magnetic field sensor chip and the soft magnet are galvanically isolated from one another by the encapsulation material.

Abstract: A photoacoustic sensor includes a first layer with an optical MEMS emitter; a second layer stacked over the first layer with a MEMS pressure pick-up and an optically transparent window, wherein the MEMS pressure pick-up and the optically transparent window are offset laterally with respect to one another; and a third layer stacked over the second layer with a cavity for a reference gas. The optical MEMS emitter transmits optical radiation along an optical path, wherein the optical path runs through the optically transparent window and the cavity for the reference gas, and wherein the MEMS pressure pick-up is outside the course of the optical path.

Abstract: A sensor device contains a first magnetic field sensor chip having a first sensor element. The first magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the first sensor element. The sensor device contains a second magnetic field sensor chip having a second sensor element. The second magnetic field sensor chip is configured to detect a component of a magnetic field at the location of the second sensor element. The sensor device contains a current conductor configured to carry a measurement current that induces a magnetic field at the locations of the sensor elements. The magnetic field sensor chips and the current conductor are arranged relative to one another in such a way that an influence of a homogeneous magnetic stray field on the first components is compensated for upon difference formation or summation applied to the first components.

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.