Abstract: This disclosure relates to a dielectric film-forming composition that includes at least one cyclized polydiene resin, and one or both of at least one reactive functional compound and at least one catalyst.

Abstract: This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and optionally (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least a second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formulas is defined in the specification.

Abstract: This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.

Abstract: This disclosure relates to a photosensitive composition that includes at least one fully imidized polyimide polymer having a weight average molecular weight in the range of about 20,000 Daltons to about 70,000 Daltons; at least one solubility switching compound; at least one photoinitiator; and at least one solvent. The composition is capable of forming a film or a dry film having a dissolution rate of greater than about 0.15 micron/second using cyclopentanone as a developer.

Abstract: This disclosure describes a process of generating a planarizing polyimide based dielectric film on a substrate with conducting metal pattern, wherein the process comprised steps of: (a) providing a dielectric film forming composition comprising at least one fully imidized polyimide polymer and at least one solvent; and (b) depositing the dielectric film forming composition onto a substrate with conducting metal pattern to form a dielectric film, wherein the difference in the highest and lowest points on a top surface of the dielectric film is less than about 2 microns.

Abstract: This disclosure relates to a dielectric film-forming composition that includes (a) at least one cyanate ester compound, the at least one cyanate ester compound containing at least two cyanate groups; and (b) at least one dielectric polymer including a polybenzoxazoie precursor polymer, a polyimide precursor polymer, or a fully imidized polyimide polymer.

Abstract: This disclosure relates to a dielectric film-forming composition that includes at least one cyclized polydiene resin, and one or both of at least one reactive functional compound and at least one catalyst.

Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Abstract: This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and optionally (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least a second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formulas is defined in the specification.

Abstract: This disclosure relates to a photosensitive stacked structure that includes first and second layers, in which the first layer is a photosensitive, dielectric layer and the second layer is a photosensitive layer. The dissolution rate of the first layer in a developer is less than the dissolution rate of the second layer in the developer.

Abstract: A polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and optionally (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least one second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formulas is defined in the specification.

Abstract: This disclosure describes a process of generating a planarizing polyimide based dielectric film on a substrate with conducting metal pattern, wherein the process comprised steps of: (a) providing a dielectric film forming composition comprising at least one fully imidized polyimide polymer and at least one solvent; and (b) depositing the dielectric film forming composition onto a substrate with conducting metal pattern to form a dielectric film, wherein the difference in the highest and lowest points on a top surface of the dielectric film is less than about 2 microns.

Abstract: This disclosure relates to dielectric film forming compositions containing a) at least one fully imidized polyimide polymer; b) at least one metal-containing (meth)acrylates; c) at least one catalyst; and d) at least one solvent, as well as related processes and related products. The compositions can form a dielectric film that generates substantially no debris when the dielectric film is patterned by laser ablation process.

Abstract: This disclosure relates to compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one quaternary ammonium hydroxide; 3) at least one carboxylic acid; 4) at least one Group II metal cation; 5) at least one copper corrosion inhibitor selected from the group consisting of 6-substituted-2,4-diamino-1,3,5-triazines; and 6) water, in which the composition is free of a compound comprising at least three hydroxyl groups. The compositions can effectively strip positive or negative-tone resists or resist residues, and be non-corrosive to bumps and underlying metallization materials (such as SnAg, CuNiSn, CuCoCu, CoSn, Ni, Cu, Al, W, Sn, Co, and the like) on a semiconductor substrate.

Abstract: A polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (I) (b) at least one tetracarboxylic acid dianhydride, and optionally (c) at least one compound containing a first functional group reactive with an amine or an anhydride and at least one second functional group selected from the group consisting of an unsubstituted alkenyl group and an unsubstituted alkynyl group. Each variable in the above formula is defined in the specification.

Abstract: This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (Ia) and a diamine of Structure (Ib), [insert formula here] (la) or [insert formula here] (lb), (b) at least one diamine of Structure (II), (c) at least one tetracarboxylic acid dianhydride, and optionally (d) at least one compound containing a first functional group reactive with an amine or an anhydride and at least a second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formulas is defined in the specification.

Abstract: This disclosure relates to a dry film structure that includes a carrier substrate, and a polymeric layer supported by the carrier substrate. The polymeric layer includes at least one fully imidized polyimide polymer.

Abstract: This disclosure relates to a composition (e.g., a cleaning and/or stripping composition) containing (a) 0.5-25 percent by weight an alkaline compound; (b) 1-25 percent by weight an alcohol amine compound; (c) 0.1-20 percent by weight a hydroxylammonium compound; (d) 5-95 percent by weight an organic solvent; (e) 0.1-5 percent by weight a corrosion inhibitor compound; and (f) 2-25 percent by weight water.

Abstract: This disclosure relates to a polyimide polymer that includes the reaction product of: (a) at least one diamine selected from the group consisting of a diamine of Structure (I) Structure (I) (b) at least one tetracarboxylic acid dianhydride, and optionally (c) at least one compound containing a first functional group reactive with an amine or an anhydride and at least one second functional group selected from the group consisting of a substituted or unsubstituted alkenyl group and a substituted or unsubstituted alkynyl group. Each variable in the above formula is defined in the specification.

Abstract: This disclosure relates to a process for stripping an organic film on a patterned semiconductor substrate. The process includes treating the organic film with an aqueous stripper composition to remove the organic film in one step. The organic film includes at least a first layer and a second layer, the first layer has a dissolution rate of at most about 0.01?/min in a developer at 25° C., and the second layer has a dissolution rate of greater than about 0.01?/min in the developer at 25° C.