Patents by Inventor Raja Duddu

Raja Duddu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8492541
    Abstract: Energetic candidate azido heterocycles and their synthesis are described.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: July 23, 2013
    Assignee: The United States of America as Represented by the Secretary of the Army
    Inventors: Raja Duddu, Paritosh Dave, Reddy Damavarapu, Rao Surapaneni
  • Patent number: 8153786
    Abstract: Energetic candidate azido heterocycles and their synthesis are described.
    Type: Grant
    Filed: July 16, 2008
    Date of Patent: April 10, 2012
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Raja Duddu, Paritosh Dave, Reddy Damavarapu, Rao Surapaneni
  • Patent number: 8133993
    Abstract: A method for synthesizing pentanitrohexaazaisowurtzintane under neutral reaction conditions. Which synthesis involves treating a solution of hexanitrohexaazaisowurtzitane in ethyl acetate in the presence of a catalytic quantity of palladium on a carbon substrate, until a heterogeneous mixture is formed. This heterogeneous mixture is hydrogenated under a balloon atmosphere until the starting hexanitrohexaazaisowurtzitane is substantially reacted. The resulting pentanitrohexaazaisowurzitane mixture is filtered, dried and recovered from the dried residue through a Si-gel column.
    Type: Grant
    Filed: November 26, 2008
    Date of Patent: March 13, 2012
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Raja Duddu, Paritosh Dave, Reddy Damavarapu, Rao Surapaneni
  • Patent number: 6160113
    Abstract: Processes and compositions for nitration of N-substituted isowurtzitane compounds with concentrated nitric acid at elevated temperatures to form HNIW and recovery thereof with high yields and purities. Polymorphic conversions to the epsilon HNIW crystal form at quanititative yields are also described.
    Type: Grant
    Filed: April 28, 1999
    Date of Patent: December 12, 2000
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Raja Duddu, Paritosh R. Dave