Patents by Inventor Rak Jun Choi

Rak Jun Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200287076
    Abstract: Disclosed according to an embodiment is a semiconductor device comprising: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the semiconductor structure includes a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode, the first conductive semiconductor layer includes a first dopant, the second conductive semiconductor layer includes a second dopant, the third conductive semiconductor layer includes the first dopant and the second dopant, and the concentration ratio between the first dopant and the second dopant included in the third conductive semiconductor layer ranges f
    Type: Application
    Filed: November 26, 2018
    Publication date: September 10, 2020
    Inventors: Rak Jun CHOI, Byeoung Jo KIM
  • Patent number: 10734547
    Abstract: An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and an intermediate layer disposed between the first conductivity type semiconductor layer and the active layer, or disposed inside the first conductivity type semiconductor layer, wherein the first conductivity type semiconductor layer, the intermediate layer, the active layer, and the second conductivity type semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductivity type semiconductor layer.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: August 4, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Rak Jun Choi, Byeoung Jo Kim, Hyun Jee Oh, Jung Yeop Hong
  • Patent number: 10734550
    Abstract: Disclosed herein is a semiconductor device including: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulating layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer through a first hole of the first insulating layer; a second electrode disposed on the second conductive semiconductor layer through a second hole of the first insulating layer; a first cover electrode disposed on the first electrode; and a second cover electrode disposed on the second electrode, wherein the second cover electrode includes a plurality of pads, and a connecting portion configured to connect the plurality of pads, a width of the connecting portion is smallest at a central position between the adjacent pads, and an area ratio between the second cover electrode and the
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: August 4, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Youn Joon Sung, Rak Jun Choi
  • Patent number: 10593838
    Abstract: The embodiment discloses a semiconductor device which includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; and an insulation layer disposed between the first electrode and the second electrode, wherein the insulation layer comprises a first insulation portion disposed between the first conductive semiconductor layer and the first cover electrode, and a second insulation portion disposed on the first cover electrode, wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion and a lower surface of the second insulation portion.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: March 17, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Youn Joon Sung, Jin Soo Park, Rak Jun Choi
  • Publication number: 20190326473
    Abstract: An embodiment relates to a semiconductor device, a semiconductor device package, and a method for producing a semiconductor device, the semiconductor device comprising a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and an intermediate layer disposed between the first conductive semiconductor layer and the active layer, or disposed inside the first conductive semiconductor layer, wherein the first conductive semiconductor layer, the intermediate layer, the active layer, and the second conductive semiconductor layer include aluminum, and the intermediate layer includes a first intermediate layer having a lower aluminum composition than that of the first conductive semiconductor layer.
    Type: Application
    Filed: June 23, 2017
    Publication date: October 24, 2019
    Inventors: Rak Jun CHOI, Byeoung Jo KIM, Hyun Jee OH, Jung Yeop HONG
  • Publication number: 20190280154
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Application
    Filed: May 17, 2019
    Publication date: September 12, 2019
    Inventors: Hyun Jee OH, Rak Jun Choi, Byeoung Jo Kim
  • Publication number: 20190267514
    Abstract: An embodiment discloses a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, and a semiconductor device package including the same. The second conductive semiconductor layer includes a first surface on which the second electrode is disposed. The second conductive semiconductor layer has a ratio of a second shortest distance W2, which is a distance from the first surface to a second point, to a first shortest distance W1, which is a distance from the first surface to a first point, (W2:W1) ranging from 1:1.25 to 1:100.
    Type: Application
    Filed: September 13, 2017
    Publication date: August 29, 2019
    Applicant: LG INNOTEK CO., LTD.
    Inventors: Rak Jun CHOI, Byeoung Jo KIM, Hyun Jee OH, Sung Ho JUNG
  • Patent number: 10340415
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: July 2, 2019
    Assignee: LG Innotek Co., Ltd.
    Inventors: Hyun Jee Oh, Rak Jun Choi, Byeoung Jo Kim
  • Patent number: 10340417
    Abstract: A semiconductor device according to an embodiment comprises: a substrate; a buffer layer provided on the substrate; a first conductivity type semiconductor layer provided on the buffer layer; a second conductivity type semiconductor layer; a light emitting structure, provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, comprising an active layer which emits ultraviolet light; and a plurality of air voids provided within the buffer layer, wherein the air voids can be formed to have two or more inclined surfaces.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: July 2, 2019
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jae Hoon Choi, Hae Jin Park, Rak Jun Choi, Byeoung Jo Kim
  • Publication number: 20190067524
    Abstract: Disclosed herein is a semiconductor device including: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulating layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer through a first hole of the first insulating layer; a second electrode disposed on the second conductive semiconductor layer through a second hole of the first insulating layer; a first cover electrode disposed on the first electrode; and a second cover electrode disposed on the second electrode, wherein the second cover electrode includes a plurality of pads, and a connecting portion configured to connect the plurality of pads, a width of the connecting portion is smallest at a central position between the adjacent pads, and an area ratio between the second cover electrode and the
    Type: Application
    Filed: August 24, 2018
    Publication date: February 28, 2019
    Inventors: Youn Joon SUNG, Rak Jun CHOI
  • Publication number: 20190051797
    Abstract: The embodiment discloses a semiconductor device which includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; and an insulation layer disposed between the first electrode and the second electrode, wherein the insulation layer comprises a first insulation portion disposed between the first conductive semiconductor layer and the first cover electrode, and a second insulation portion disposed on the first cover electrode, wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion and a lower surface of the second insulation portion.
    Type: Application
    Filed: August 10, 2018
    Publication date: February 14, 2019
    Inventors: Youn Joon SUNG, Jin Soo PARK, Rak Jun CHOI
  • Publication number: 20180315887
    Abstract: A semiconductor device according to an embodiment comprises: a substrate; a buffer layer provided on the substrate; a first conductivity type semiconductor layer provided on the buffer layer; a second conductivity type semiconductor layer; a light emitting structure, provided between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, comprising an active layer which emits ultraviolet light; and a plurality of air voids provided within the buffer layer, wherein the air voids can be formed to have two or more inclined surfaces.
    Type: Application
    Filed: October 14, 2016
    Publication date: November 1, 2018
    Inventors: Jae Hoon CHOI, Hae Jin PARK, Rak Jun CHOI, Byeoung Jo KIM
  • Publication number: 20180145219
    Abstract: A light emitting structure that includes: first and second semiconductor layers having aluminum; and an active layer having aluminum between the first and the second semiconductor layers, the intensity exhibited in the second semiconductor layer range between a first minimum intensity of the secondary ions and a first maximum intensity of the secondary ions, and the intensity exhibited in the first semiconductor layer include a second minimum intensity of the secondary ions, the second minimum intensity being different from the first minimum intensity, and at a first prescribed distance from a surface of the second semiconductor layer, the second semiconductor layer exhibits a first intermediate intensity of the secondary ions corresponding to the second minimum intensity, which is between the first minimum intensity and the first maximum intensity, wherein the first maximum intensity occurs at a second prescribed distance from the first prescribed distance, wherein a ratio of the second prescribed distance (
    Type: Application
    Filed: November 22, 2017
    Publication date: May 24, 2018
    Inventors: Byeong Jo Kim, Rak Jun Choi, Hyun Jee Oh
  • Publication number: 20180069150
    Abstract: A semiconductor device includes a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer provided between the first conductive semiconductor layer and the second conductive semiconductor layer, and a semiconductor device package including the semiconductor device. The active layer includes a plurality of barrier layers and a plurality of well layers. The second conductive semiconductor layer includes a conductive second semiconductor layer and a conductive first semiconductor layer provided on the conductive second semiconductor layer. The conductive second semiconductor layer has a higher aluminum composition than the well layers, and the conductive first semiconductor layer has a lower aluminum composition than the well layers.
    Type: Application
    Filed: August 31, 2017
    Publication date: March 8, 2018
    Inventors: Hyun Jee OH, Rak Jun CHOI, Byeoung Jo KIM
  • Patent number: 9711682
    Abstract: The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: July 18, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Young Hun Han, Rak Jun Choi, Jeong Tak Oh
  • Patent number: 9548416
    Abstract: Disclosed is a light emitting device. The light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer disposed under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer to the first semiconductor layer and contacted with the first semiconductor layer.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: January 17, 2017
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jae-Hoon Choi, Buem Yeon Lee, Ki Young Song, Rak Jun Choi
  • Patent number: 9406838
    Abstract: According to one embodiment, a light-emitting element comprises: a first electrically-conductive semiconductor layer, a second electrically-conductive semiconductor layer; and an active layer which is disposed between the first electrically-conductive layer and the second electrically-conductive layer, and in which a well layer and a barrier layer are alternately laminated at least once. The active layer comprises: a first region which is disposed between a neighboring barrier layer and well layer, and linearly reduces the energy band gap; and a second region which is disposed between a neighboring well layer and barrier layer, and linearly increases the energy band gap. In the well layer, at least one first region and second region neighboring the same well layer have mutually different thicknesses.
    Type: Grant
    Filed: May 29, 2013
    Date of Patent: August 2, 2016
    Assignee: LG Innotek Co., Ltd.
    Inventors: Young Hun Han, Seon Ho Lee, Ki Young Song, Rak Jun Choi
  • Patent number: 9362451
    Abstract: A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion.
    Type: Grant
    Filed: January 12, 2015
    Date of Patent: June 7, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Myung Hoon Jung, Hyun Chul Lim, Sul Hee Kim, Rak Jun Choi
  • Patent number: 9281437
    Abstract: Disclosed are a light emitting device, a method of fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, an electron blocking layer on the active layer, and a second conductive semiconductor layer on the electron blocking layer. The electron blocking layer includes a first electron blocking layer and an interrupted diffusion layer on the first electron blocking layer.
    Type: Grant
    Filed: April 19, 2013
    Date of Patent: March 8, 2016
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Dong Wook Kim, June O Song, Rak Jun Choi, Jeong Tak Oh
  • Publication number: 20160049545
    Abstract: Disclosed is a light emitting device. The light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on the first semiconductor layer, and a second conductive semiconductor layer on the active layer. The nano-structure includes a graphene layer disposed under the first semiconductor layer to make contact with the first semiconductor layer; and a plurality of nano-textures extending from a top surface of the graphene layer to the first semiconductor layer and contacted with the first semiconductor layer.
    Type: Application
    Filed: October 28, 2015
    Publication date: February 18, 2016
    Inventors: Jae Hoon CHOI, Buem Yeon LEE, Ki Young SONG, Rak Jun CHOI CHOI