Patents by Inventor Ralph Albano
Ralph Albano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7011868Abstract: Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.Type: GrantFiled: July 24, 2003Date of Patent: March 14, 2006Assignee: Axcelis Technologies, Inc.Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ralph Albano, Ivan L. Berry, III, Atsushi Shiota
-
Patent number: 6913796Abstract: Low dielectric constant porous materials with improved elastic modulus and hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness. The improvement in elastic modulus is typically greater than or about 50%, more typically greater than or about 100%, and more typically greater than or about 200%. The improvement in hardness is typically greater than or about 50%. The plasma cured porous dielectric material can optionally be post-plasma treated. The post-plasma treatment of the plasma cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus and hardness as compared to the plasma cured porous dielectric material.Type: GrantFiled: September 14, 2001Date of Patent: July 5, 2005Assignees: Axcelis Technologies, Inc., Dow Corning CorporationInventors: Ralph Albano, Cory Bargeron, Ivan L. Berry, III, Jeff Bremmer, Phil Dembowski, Orlando Escorcia, Qingyuan Han, Nick Sbrockey, Carlo Waldfried
-
Patent number: 6759098Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin molecule containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealed, plasma cured film has a dielectric constant between about 1.1 and about 2.4 and an improved elastic modulus.Type: GrantFiled: July 16, 2001Date of Patent: July 6, 2004Assignees: Axcelis Technologies, Inc., Chemat Technology, Inc.Inventors: Qingyuan Han, Carlo Waldfried, Orlando Escorcia, Ralph Albano, Ivan L. Berry, III, Jeff Jang, Ian Ball
-
Publication number: 20040028916Abstract: Low dielectric constant porous materials with improved elastic modulus and material hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and material hardness, and with comparable dielectric constant. The improvement in elastic modulus is typically greater than or about 50%, and more typically greater than or about 100%. The improvement in material hardness is typically greater than or about 50%. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure.Type: ApplicationFiled: July 24, 2003Publication date: February 12, 2004Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ralph Albano, Ivan L. Berry, Atsushi Shiota
-
Publication number: 20030157267Abstract: Low dielectric constant porous materials with improved elastic modulus and film hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material with a fluorine-free plasma gas to produce a fluorine-free plasma cured porous dielectric material. Fluorine-free plasma curing of the porous dielectric material yields a material with improved modulus and hardness, but with a higher dielectric constant. The improvement in elastic modulus is typically greater than or about 100%, and more typically greater than or about 200%. The improvement in film hardness is typically greater than or about 50%. The fluorine-free plasma cured porous dielectric material can optionally be post-plasma treated.Type: ApplicationFiled: January 17, 2003Publication date: August 21, 2003Inventors: Carlo Waldfried, Qingyuan Han, Orlando Escorcia, Ralph Albano, Ivan L. Berry, Atsushi Shiota
-
Publication number: 20030054115Abstract: Low dielectric constant porous materials with improved elastic modulus. The process of making such porous materials involves providing a porous dielectric material and ultraviolet (UV) curing of the porous dielectric material to produce a UV cured porous dielectric material. UV curing of the porous dielectric material yields a material with improved modulus and comparable dielectric constant. The improvement in elastic modulus is typically greater than about 50%. The porous dielectric material is UV cured for no more than about 300 seconds at a temperature less than about 450° C. The UV cured porous dielectric material can optionally be post-UV treated. Rapid Anneal Processing (RAP) of the UV cured porous dielectric material reduces the dielectric constant of the material while maintaining an improved elastic modulus as compared to the UV cured porous dielectric material. The annealing temperature is typically less than about 450° C., and the annealing time is typically less than about 60 minutes.Type: ApplicationFiled: September 14, 2001Publication date: March 20, 2003Inventors: Ralph Albano, Cory Bargeron, Ivan L. Berry, Jeff Bremmer, Orlando Escorcia, Qingyuan Han, Ari Margolis, Carlo Waldfried
-
Publication number: 20020106500Abstract: Low dielectric constant porous materials with improved elastic modulus and film hardness. The process of making such porous materials involves providing a porous dielectric material and plasma curing the porous dielectric material to produce a plasma cured porous dielectric material. Plasma curing of the porous dielectric material yields a material with improved modulus and hardness, but with a higher dielectric constant. The improvement in elastic modulus is typically greater than about 100%, and more typically greater than about 200%. The improvement in film hardness is typically greater than about 50%. The porous dielectric material is plasma cured for a time between about 15 and about 120 seconds at a temperature less than about 350° C. The plasma cured porous dielectric material can optionally be post-plasma treated.Type: ApplicationFiled: September 14, 2001Publication date: August 8, 2002Inventors: Ralph Albano, Cory Bargeron, Ivan L. Berry, Jeff Bremmer, Phil Dembowski, Orlando Escorcia, Qingyuan Han, Nick Sbrockey, Carlo Waldfried
-
Publication number: 20020102413Abstract: Low dielectric constant film materials with improved elastic modulus. The method of making such film materials involves providing a porous methyl silsesquioxane based dielectric film material produced from a resin containing at least 2 Si—CH3 groups and plasma curing the porous film material to convert the film into porous silica. Plasma curing of the porous film material yields a film with improved modulus and outgassing properties. The improvement in elastic modulus is typically greater than about 100%, and more typically greater than about 200%. The film is plasma cured for between about 15 and about 120 seconds at a temperature less than about 350° C. The plasma cured porous film material can optionally be annealed. The annealing of the plasma cured film may reduce the dielectric constant of the film while maintaining an improved elastic modulus as compared to the plasma cured porous film material. The annealing temperature is typically less than about 450° C.Type: ApplicationFiled: July 16, 2001Publication date: August 1, 2002Inventors: Qingyuan Han, Carlo Waldfried, Orlando Escorcia, Ralph Albano, Ivan L. Berry, Jeff Jang, Ian Ball