Patents by Inventor Ralph R. Dammel

Ralph R. Dammel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230420244
    Abstract: A method is disclosed for the preparation of a silicon nitrogeneous film. Polysilazane film is exposed to an electron beam irradiation and subsequently to at least one process selected from the group consisting of a vacuum ultra-violet light irradiation and a plasma processing. The treated film is heated under a non-oxidizing atmosphere to manufacture a silicon nitrogeneous film. The silicon nitrogeneous film is able to be formed at low process temperature. Further, the silicon nitrogeneous film has a high refractive index and low oxygen content.
    Type: Application
    Filed: November 17, 2021
    Publication date: December 28, 2023
    Inventors: Atsuhiko SATO, Ralph R. DAMMEL, Takashi FUJIWARA, Mansour MOINPOUR
  • Publication number: 20230119980
    Abstract: The present invention pertains to a method of manufacturing segregated layers above a substrate. The invention also pertains to methods of manufacturing a photoresist layer, photoresist patterns, a processed substrate and a device.
    Type: Application
    Filed: March 8, 2021
    Publication date: April 20, 2023
    Inventors: Daniel HUDSON, Changsheng WANG, Kornel OCYTKO, Graham MORSE, Ben JEFFERY, Ralph R. DAMMEL, Takanori KUDO
  • Patent number: 8663906
    Abstract: The present invention provides a composition for forming a fine pattern with high dry etching resistance and a method for forming the fine pattern. The composition for fine pattern formation containing: a resin containing a repeating unit having a silazane bond; and a solvent as well as a method for fine pattern formation using the same.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: March 4, 2014
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Ralph R Dammel, Wen-Bing Kang, Yasuo Shimizu, Tomonori Ishikawa
  • Patent number: 8524441
    Abstract: A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.
    Type: Grant
    Filed: February 25, 2008
    Date of Patent: September 3, 2013
    Assignees: AZ Electronic Materials USA Corp., Braggone Oy
    Inventors: Ruzhi Zhang, WooKyu Kim, David J. Abdallah, PingHung Lu, Mark O. Neisser, Ralph R. Dammel, Ari Karkkainen
  • Publication number: 20120219919
    Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
    Type: Application
    Filed: February 24, 2011
    Publication date: August 30, 2012
    Inventors: Muthiah Thiyagarajan, Ralph R. Dammel, Yi Cao, SungEun Hong, WenBing Kang, Clement Anyadiegwu
  • Publication number: 20120108067
    Abstract: The invention relates to an edge bead remover composition for an organic film disposed on a substrate surface, comprising an organic solvent and at least one polymer having a contact angle with water greater than 70°. The invention also relates to a process for using the composition as an edge bead remover for an organic film.
    Type: Application
    Filed: October 29, 2010
    Publication date: May 3, 2012
    Inventors: Mark O. Neisser, Srinivasan Chakrapani, Munirathna Padmanaban, Ralph R. Dammel
  • Patent number: 8084186
    Abstract: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.
    Type: Grant
    Filed: February 10, 2009
    Date of Patent: December 27, 2011
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: David Abdallah, Ralph R. Dammel, Yusuke Takano, Jin Li, Kazunori Kurosawa
  • Publication number: 20110086312
    Abstract: The present invention relates to a positive bottom photoimageable antireflective coating composition which is capable of being developed in an aqueous alkaline developer, wherein the antireflective coating composition comprises a polymer comprising at least one recurring unit with a chromophore group and one recurring unit with a hydroxyl and/or a carboxyl group, a vinyl ether terminated crosslinking agent of structure (7), and optionally, a photoacid generator and/or an acid and/or a thermal acid generator, where structure (7) is wherein W is selected from (C1-C30) linear, branched or cyclic alkyl moiety, substituted or unsubstituted (C3-C40) alicyclic hydrocarbon moiety and substituted is or unsubstituted (C3-C40) cycloalkylalkylene moiety; R is selected from C1-C10 linear or branched alkylene and n?2. The invention further relates to a process for using such a composition.
    Type: Application
    Filed: October 9, 2009
    Publication date: April 14, 2011
    Inventors: Ralph R. Dammel, Srinivasan Chakrapani, Munirathna Padmanaban, Shinji Miyazaki, Edward W. Ng, Takanori Kudo, Alberto D. Dioses, Francis M. Houlihan
  • Patent number: 7923200
    Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern comprising a polymer containing a lactam group of structure (1) where R1 is independently selected hydrogen, C1-C4 alkyl, C1-C6 alkyl alcohol, hydroxy (OH), amine (NH2), carboxylic acid, and amide (CONH2), ?represents the attachment to the polymer, m=1-6, and n=1-4. The present invention also relates to a process for manufacturing a microelectronic device comprising providing a substrate with a photoresist pattern, coating the photoresist pattern with the novel coating material reacting a portion of the coating material in contact with the photoresist pattern, and removing a portion of the coating material which is not reacted with a removal solution.
    Type: Grant
    Filed: April 9, 2007
    Date of Patent: April 12, 2011
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Muthiah Thiyagarajan, Ralph R. Dammel, Yi Cao, SungEun Hong, WenBing Kang, Clement Anyadiegwu
  • Patent number: 7833693
    Abstract: The present application relates to a compound of formula A-X—B, where (i) A-X—B form an ionic compound Ai Xi Bi where Ai and Bi are each individually an organic onium cation; and Xi is anion of the formula Q-R500—SO3? or (ii) A-X—B form a non-ionic compound Ac-Xc-Bc, where Ai, Bi, Q, R500, Ac, Bc, and Xc are defined herein. The compounds are useful as photoactive materials.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: November 16, 2010
    Inventors: M. Dalil Rahman, Francis M. Houlihan, Munirathna Padmanaban, SangHo Lee, Ralph R. Dammel, David Rentkiewicz, Clement Anyadiegwu
  • Patent number: 7816071
    Abstract: A process for imaging a photoresist comprising the steps of, a) forming a stack of multiple layers of organic antireflective coatings on a substrate; b) forming a coating of a photoresist over the upper layer of the stack of multiple layers of organic antireflective coatings; c) imagewise exposing the photoresist with an exposure equipment; and, d) developing the coating with a developer.
    Type: Grant
    Filed: January 24, 2006
    Date of Patent: October 19, 2010
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: David J. Abdallah, Mark O. Neisser, Ralph R. Dammel, Georg Pawlowski, John Biafore, Andrew R. Romano
  • Publication number: 20100255430
    Abstract: The present invention provides a composition for forming a fine pattern with high dry etching resistance and a method for forming the fine pattern. The composition for fine pattern formation containing: a resin containing a repeating unit having a silazane bond; and a solvent as well as a method for fine pattern formation using the same.
    Type: Application
    Filed: September 12, 2008
    Publication date: October 7, 2010
    Inventors: Ralph R. Dammel, Wen-Bing Kang, Yasuo Shimizu, Tomonori Ishikawa
  • Publication number: 20100203299
    Abstract: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an optional absorbing organic underlayer on a substrate; b) forming a coating of a photoresist over the underlayer; c) forming a photoresist pattern; d) forming a polysilazane coating over the photoresist pattern from a polysilazane coating composition, where the polysilazane coating is thicker than the photoresist pattern, and further where the polysilazane coating composition comprises a silicon/nitrogen polymer and an organic coating solvent; e) etching the polysilazane coating to remove the polysilazane coating at least up to a level of the top of the photoresist such that the photoresist pattern is revealed; and, f) dry etching to remove the photoresist and the underlayer which is beneath the photoresist, thereby forming an opening beneath where the photoresist pattern was present.
    Type: Application
    Filed: February 10, 2009
    Publication date: August 12, 2010
    Inventors: David Abdallah, Ralph R. Dammel, Yusuke Takano, Jin Li, Kazunori Kurosawa
  • Patent number: 7745077
    Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: June 29, 2010
    Assignee: AZ Electronic Materials USA Corp.
    Inventors: Muthiah Thiyagarajan, Yi Cao, Sung Eun Hong, Ralph R. Dammel
  • Publication number: 20100092895
    Abstract: A polymer comprising a siloxane polymer having at least one Si—OH group and at least one Si—OR group, where R is condensation stabilizing group optionally having a reactive functional group, wherein the siloxane polymer, when placed into a solvent, has a weight average molecular weight increase of less than or equal to 50% after aging for one week at 40° C. as measured by GPC is provided.
    Type: Application
    Filed: February 25, 2008
    Publication date: April 15, 2010
    Inventors: Ruzhi Zhang, Wookyu Kim, David J. Abdallah, PingHung Lu, Mark O. Neissor, Ralph R. Dammel, Ari Karkkainen
  • Publication number: 20100040838
    Abstract: The present invention relates to a process for forming an reverse tone image on a device comprising; a) forming an absorbing underlayer on a substrate; b) forming a coating of a positive photoresist over the underlayer; c) forming a photoresist pattern; d) treating the first photoresist pattern with a hardening compound, thereby forming a hardened photoresist pattern; e) forming a silicon coating over the hardened photoresist pattern from a silicon coating composition; f) dry etching the silicon coating to remove the silicon coating till the silicon coating has about the same thickness as the photoresist pattern; and, g) dry etching to remove the photoresist and the underlayer, thereby forming a trench beneath the original position of the photoresist pattern. The invention further relates to a product of the above process and to a microelectronic device made from using the above process.
    Type: Application
    Filed: August 15, 2008
    Publication date: February 18, 2010
    Inventors: David J. Abdallah, Ralph R. Dammel, Mark Neisser
  • Publication number: 20090317739
    Abstract: The present invention relates to an aqueous coating composition for coating a photoresist pattern, comprising a polymer comprising at least one unit with an alkylamino group, where the unit has a structure (1), where, R1 to R5 are independently selected from hydrogen and C1 to C6 alkyl, and W is C1 to C6 alkyl. The invention also relates to a process for imaging a photoresist layer using the present composition.
    Type: Application
    Filed: June 18, 2008
    Publication date: December 24, 2009
    Inventors: Muthiah Thiyagarajan, Yi Cao, Sung Eun Hong, Ralph R. Dammel
  • Publication number: 20090274974
    Abstract: Graded absorption silicon based antireflective coating compositions are described.
    Type: Application
    Filed: April 30, 2008
    Publication date: November 5, 2009
    Inventors: David Abdallah, Ralph R. Dammel
  • Publication number: 20090253080
    Abstract: A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) imagewise exposing the second photoresist; and, g) developing the imagewise exposed second photoresist to form a second photoresist pattern between the first photoresist pattern, thereby providing a double photoresist pattern.
    Type: Application
    Filed: April 2, 2008
    Publication date: October 8, 2009
    Inventors: Ralph R. Dammel, David Abdallah, Eric Alemy, Munirathna Padmanaban
  • Publication number: 20090253081
    Abstract: A process for forming a photoresist pattern on a device, comprising; a) forming a layer of first photoresist on a substrate from a first photoresist composition; b) imagewise exposing the first photoresist; c) developing the first photoresist to form a first photoresist pattern; d) treating the first photoresist pattern with a hardening compound comprising at least 2 amino (NH2) groups, thereby forming a hardened first photoresist pattern; e) forming a second photoresist layer on the region of the substrate including the hardened first photoresist pattern from a second photoresist composition; f) flood exposing the second photoresist; and, g) developing the flood exposed second photoresist to form a photoresist pattern with increased dimensions and reduced spaces.
    Type: Application
    Filed: April 2, 2008
    Publication date: October 8, 2009
    Inventors: David Abdallah, Ralph R. Dammel, Victor Monreal