Patents by Inventor Raluca Tiron
Raluca Tiron has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240411057Abstract: A method for manufacturing a three-dimensional structure comprising supplying a stack comprising, stacked in a vertical direction, a support substrate, a sacrificial layer, a layer of interest having a sidewall and a tensor layer having a sidewall, the tensor layer having a residual stress. The method also comprises removing a removal portion of the sacrificial layer, while retaining a remaining portion of the sacrificial layer underlying the layer of interest. The removal portion is located in line with a lateral portion of the layer of interest extending from the entire sidewall of the layer of interest. The residual stress of the tensor layer is configured to cause bending of the layer of interest during the step of removing the removal portion.Type: ApplicationFiled: April 11, 2024Publication date: December 12, 2024Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Raphaël FEOUGIER, Nicolas POSSEME, Raluca TIRON, Maxime ARGOUD
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Patent number: 12022751Abstract: This method comprises the steps: a) provide a substrate (1); b) form a layer of a first block copolymer on the substrate (1), by a technique of self-assembly such that the first layer comprises a series of first lithographic patterns extending in a first direction; c) create a first mold comprising impressions formed from the series of first lithographic patterns; d) provide a structured layer comprising a series of patterns (30), conforming to the series of first lithographic patterns, and extending in the first direction; e) form a layer (4) of a second block copolymer (40, 41) on the structured layer by a technique of self-assembly such that the second layer (4) comprises a series of second lithographic patterns (40) extending in a second direction perpendicular to the first direction; f) create a second mold comprising impressions formed from the series of second lithographic patterns (40).Type: GrantFiled: May 19, 2021Date of Patent: June 25, 2024Assignee: Commissariat a l'Energie Atomique et aux Energies AlternativesInventors: Raluca Tiron, Gaëlle Chamiot-Maitral, Elisa Vianello
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Patent number: 11817490Abstract: A method for making a quantum device including: forming, over a semiconductor layer, a graphoepitaxy guide forming a cavity with a lateral dimension that is a multiple of a period of self-assembly of a di-block copolymer into lamellas; first deposition of the copolymer in the cavity; first self-assembly of the copolymer, forming a first alternating arrangement of first lamellas and of second lamellas; removal of the first lamellas; implantation of dopants in portions of the semiconductor layer previously covered with the first lamellas; removal of the second lamellas; second deposition of the copolymer in the cavity, over a gate material; second self-assembly of the copolymer, forming a second alternating arrangement of first and second lamellas; removal of the second lamellas; etching of portions of the gate material previously covered with the second lamellas.Type: GrantFiled: August 16, 2021Date of Patent: November 14, 2023Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Louis Hutin, Julien Borrel, Raluca Tiron
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Publication number: 20230340672Abstract: A nanowire forming method, including the forming of a DNA origami having through openings, and the forming in the through openings of portions forming all or part of the nanowires.Type: ApplicationFiled: December 1, 2020Publication date: October 26, 2023Applicants: Commissariat à I'Énergie Atomique et aux Énergies Alternatives, Universite Grenoble Alpes, Institut Polytechnique de Grenoble, Centre National de la Recherche ScientifiqueInventors: Xavier Baillin, Vincent Consonni, Stéphane Fanget, Bassem Salem, Raluca Tiron
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Patent number: 11688811Abstract: A field-effect transistor including an active zone comprises a source, a channel, a drain and a control gate, which is positioned level with the channel, allowing a current to flow through the channel between the source and drain along an x-axis, the channel comprising: a first edge of separation with the source; and a second edge of separation with the drain; the channel being compressively or tensilely strained, wherein the channel includes a localized perforation or a set of localized perforations along at least the first and/or second edge of the channel so as to also create at least one shear strain in the channel. A process for fabricating the transistor is provided.Type: GrantFiled: December 16, 2020Date of Patent: June 27, 2023Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Emmanuel Augendre, Maxime Argoud, Sylvain Maitrejean, Pierre Morin, Raluca Tiron
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Publication number: 20220380486Abstract: A method for self-assembly of a protein in a three-dimensional honeycomb structure, comprising the following consecutive steps: providing a solution comprising a solvent and a protein, the protein comprising a sequence of amino acids corresponding to an oligomerisation domain of a LEAFY protein, for example to the oligomerisation domain of Ginkgo biloba, in fusion with a tag, placing the solution in contact with a substrate, evaporating the solvent in order to crystallise the protein, the oligomerisation domain crystallising in the form of a primary helix, each primary helix interacting with six other primary helixes, whereby a three-dimensional honeycomb protein structure is obtained perpendicular to the substrate, the protein structure being attached to the substrate by the tag.Type: ApplicationFiled: June 2, 2020Publication date: December 1, 2022Inventors: Pierre-Henri ELCHINGER, Renaud Dumas, Elise Jacquier, Pierre-Henri Jouneau, François Parcy, Raluca Tiron
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Patent number: 11489012Abstract: A method of producing a recurrent neural network computer includes consecutive steps of providing a substrate with a first electrode; structuring the first electrode by etching using a first mask made of block copolymers, such that said electrode has free regions which are randomly spatially distributed; forming a resistive-RAM-type memory layer on the first structured electrode; forming a second electrode on the memory layer; and structuring the second electrode by etching, using a second mask made of block copolymers such that said electrode has free regions which are randomly spatially distributed.Type: GrantFiled: September 25, 2018Date of Patent: November 1, 2022Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Elisa Vianello, Catherine Carabasse, Selina La Barbera, Raluca Tiron
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Patent number: 11415881Abstract: A method for functionalising a substrate intended for the self-assembly of a block copolymer, includes depositing on the surface of a substrate a layer of a first polymer material, the first polymer having a first chemical affinity with respect to the block copolymer; grafting one part only of the first polymer material layer onto the surface of the substrate; printing, using a mould, patterns in a sacrificial layer arranged above the grafted part of the first polymer material layer; transferring the patterns of the sacrificial layer into the grafted part of the first polymer material layer, until the substrate is reached; and removing at least one part of the sacrificial layer by wet etching, so as to uncover the grafted part of the first polymer material layer.Type: GrantFiled: December 7, 2017Date of Patent: August 16, 2022Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Stefan Landis, Raluca Tiron
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Publication number: 20220052179Abstract: A method for making a quantum device including: forming, over a semiconductor layer, a graphoepitaxy guide forming a cavity with a lateral dimension that is a multiple of a period of self-assembly of a di-block copolymer into lamellas; first deposition of the copolymer in the cavity; first self-assembly of the copolymer, forming a first alternating arrangement of first lamellas and of second lamellas; removal of the first lamellas; implantation of dopants in portions of the semiconductor layer previously covered with the first lamellas; removal of the second lamellas; second deposition of the copolymer in the cavity, over a gate material; second self-assembly of the copolymer, forming a second alternating arrangement of first and second lamellas; removal of the second lamellas; etching of portions of the gate material previously covered with the second lamellas.Type: ApplicationFiled: August 16, 2021Publication date: February 17, 2022Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Louis HUTIN, Julien BORREL, Raluca TIRON
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Publication number: 20210367149Abstract: This method comprises the steps: a) provide a substrate (1); b) form a layer of a first block copolymer on the substrate (1), by a technique of self-assembly such that the first layer comprises a series of first lithographic patterns extending in a first direction; c) create a first mold comprising impressions formed from the series of first lithographic patterns; d) provide a structured layer comprising a series of patterns (30), conforming to the series of first lithographic patterns, and extending in the first direction; e) form a layer (4) of a second block copolymer (40, 41) on the structured layer by a technique of self-assembly such that the second layer (4) comprises a series of second lithographic patterns (40) extending in a second direction perpendicular to the first direction; f) create a second mold comprising impressions formed from the series of second lithographic patterns (40).Type: ApplicationFiled: May 19, 2021Publication date: November 25, 2021Applicant: Commissariat à l'Energie Atomique et aux Energies AlternativesInventors: Raluca TIRON, Gaëlle CHAMIOT-MAITRAL, Elisa VIANELLO
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Publication number: 20210118673Abstract: A method for forming a chemical guiding structure for self-assembling organic nano-objects by chemo-epitaxy, the method including forming on a substrate sacrificial patterns having a critical dimension in a plane parallel to the substrate; forming on the substrate, between the sacrificial patterns, a first pattern made of a first polymer material, the first polymer material having a first chemical affinity with respect to the organic nano-objects; partially etching the sacrificial patterns so as to reduce the critical dimension of the sacrificial patterns, the sacrificial patterns being etched selectively with respect to said first pattern using a first wet etching method; forming on the substrate, in areas created by the partial etching of the sacrificial patterns, second patterns made of a second polymer material, the second polymer material having a second chemical affinity with respect to the organic nano-objects, different from the first chemical affinity; and removing the sacrificial patterns.Type: ApplicationFiled: October 16, 2020Publication date: April 22, 2021Inventors: Raluca TIRON, Tommaso-Jacopo GIAMMARIA
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Patent number: 10978594Abstract: The invention relates to a field-effect transistor including an active zone including a source, a channel, a drain and a control gate, which is positioned level with said channel, allowing a current to flow through said channel between the source and drain along an x-axis, said channel including: a first edge of separation with said source; and a second edge of separation with said drain; said channel being compressively or tensilely strained, characterized in that said channel includes a localized perforation or a set of localized perforations along at least said first and/or second edge of said channel so as to also create at least one shear strain in said channel. The invention also relates to a process for fabricating said transistor.Type: GrantFiled: December 22, 2015Date of Patent: April 13, 2021Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Emmanuel Augendre, Maxime Argoud, Sylvain Maitrejean, Pierre Morin, Raluca Tiron
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Publication number: 20210104634Abstract: A field-effect transistor including an active zone comprises a source, a channel, a drain and a control gate, which is positioned level with the channel, allowing a current to flow through the channel between the source and drain along an x-axis, the channel comprising: a first edge of separation with the source; and a second edge of separation with the drain; the channel being compressively or tensilely strained, wherein the channel includes a localized perforation or a set of localized perforations along at least the first and/or second edge of the channel so as to also create at least one shear strain in the channel. A process for fabricating the transistor is provided.Type: ApplicationFiled: December 16, 2020Publication date: April 8, 2021Inventors: Emmanuel AUGENDRE, Maxime ARGOUD, Sylvain MAITREJEAN, Pierre MORIN, Raluca TIRON
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Publication number: 20210088897Abstract: A method for forming a chemical guiding structure intended for the self-assembly of a block copolymer by chemoepitaxy, includes forming on a substrate at least one initial pattern made of a first grafted polymer material having a first molar mass and a first chemical affinity with respect to the block copolymer; covering the initial pattern and a region of the substrate adjacent to the initial pattern with a layer including a second graftable polymer material, the second polymer material having a second molar mass, greater than the first molar mass, and a second chemical affinity with respect to the block copolymer, different from the first chemical affinity; and grafting the second polymer material in the region adjacent to the initial pattern.Type: ApplicationFiled: December 21, 2018Publication date: March 25, 2021Inventors: Raluca TIRON, Florian DELACHAT, Ahmed GHARBI, Xavier CHEVALIER, Christophe NAVARRO, Anne PAQUET
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Patent number: 10928725Abstract: A method for the directed self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern, the guide pattern having a cavity with a bottom and side walls; forming a functionalisation layer on the guide pattern that has a first portion and a second portion disposed, respectively, on the bottom and side walls of the cavity; forming a protective layer on the first and second portions of the functionalisation layer; etching the protective layer and the second portion of the functionalisation layer such that a portion of the protective layer is retained and the side walls of the cavity are exposed, the retained portion of the protective layer having a thickness of less than 15 nm; selectively etching the portion of the protective layer relative to the first portion of the functionalisation layer and to the guide pattern; and depositing a block copolymer in the cavity.Type: GrantFiled: May 23, 2017Date of Patent: February 23, 2021Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Raluca Tiron, Nicolas Posseme, Xavier Chevalier, Christophe Navarro
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Patent number: 10923352Abstract: A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.Type: GrantFiled: May 23, 2017Date of Patent: February 16, 2021Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Raluca Tiron, Nicolas Posseme, Xavier Chevalier
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Patent number: 10845705Abstract: A method for forming a chemical guiding structure intended for self-assembly of a block copolymer by chemoepitaxy, where the method includes forming on a substrate a functionalisation layer made of a first polymer material having a first chemical affinity with respect to the block copolymer; forming on the substrate guiding patterns made of a second polymer material having a second chemical affinity with respect to the block copolymer, different from the first chemical affinity, and wherein the guiding to patterns have a critical dimension of less than 12.5 nm and are formed by means of a mask comprising spacers.Type: GrantFiled: December 20, 2018Date of Patent: November 24, 2020Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Raluca Tiron, Guillaume Claveau, Ahmed Gharbi, Laurent Pain, Xavier Chevalier, Christophe Navarro, Anne Paquet
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Publication number: 20200335327Abstract: A method for forming a functionalised guide pattern, includes forming a functionalisation layer on a substrate; depositing a protective layer on the functionalisation layer; forming a guide pattern on the protective layer that has a cavity opening onto the protective layer and a bottom and side walls; implanting ions with an atomic number of less than 10 in a portion of the protective layer located at the bottom of the cavity, such that the implanted portion can be selectively etched relative to the non-implanted portion; forming, in the cavity, a second functionalisation layer having first and second portions disposed on, respectively, the protective layer at the bottom of the cavity and the side walls of the cavity; and selectively etching the implanted portion and the first portion of the second functionalisation layer, to expose a portion of the functionalisation layer located at the bottom of the cavity.Type: ApplicationFiled: May 23, 2017Publication date: October 22, 2020Inventors: Raluca TIRON, Nicolas POSSEME, Xavier CHEVALIER
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Publication number: 20200321397Abstract: A method of producing a recurrent neural network computer includes consecutive steps of providing a substrate with a first electrode; structuring the first electrode by etching using a first mask made of block copolymers, such that said electrode has free regions which are randomly spatially distributed; forming a resistive-RAM-type memory layer on the first structured electrode; forming a second electrode on the memory layer; and structuring the second electrode by etching, using a second mask made of block copolymers such that said electrode has free regions which are randomly spatially distributed.Type: ApplicationFiled: September 25, 2018Publication date: October 8, 2020Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Elisa VIANELLO, Catherine CARABASSE, Selina LA BARBERA, Raluca TIRON
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Patent number: 10795257Abstract: A method for forming a functionalised guide pattern for the self-assembly of a block copolymer by graphoepitaxy, includes forming a guide pattern made of a first material having a first chemical affinity for the block copolymer, the guide pattern having a cavity with a bottom and side walls; grafting a functionalisation layer made of a second polymeric material having a second chemical affinity for the block copolymer, the functionalisation layer having a first portion grafted onto the bottom of the cavity and a second portion grafted onto the side walls of the cavity; selectively etching the second portion of the functionalisation layer relative to the first portion of the functionalisation layer, the etching including a step of exposure to an ion beam following a direction that intersects the second portion of the functionalisation layer, such that the ion beam does not reach the first portion of the functionalisation layer.Type: GrantFiled: May 23, 2017Date of Patent: October 6, 2020Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Raluca Tiron, Nicolas Posseme, Xavier Chevalier