Abstract: Process for the preparation of a semiconducting ceramic based on doped tin oxide SnO2 by a process of “PADO” (Precursor Alloy Direct Oxidation) type applied to an alloy of tin and of doping metals or by a process of “PADO” type applied to tin, the doping metals being added in the form of oxides to the powder subjected to sintering.

Abstract: A surge arrester includes a stack of components having at least one varistor. Each component has end faces, at least one of which is mechanically bonded to an end face of another component such that the combined components of the stack define a single, monolithic structure that serves as both an electrically-active element and a mechanical support element of the surge arrester. The surge arrester also includes an insulative housing surrounding the stack of components. The stack of components is capable of withstanding current pulses having magnitudes of 65 kA and durations of {fraction (4/10)} microseconds without significant degradation in operating performance of the stack of components.

Abstract: A surge arrester includes a stack of components having at least one varistor. Each component has end faces, at least one of which is mechanically bonded to an end face of another component such that the combined components of the stack define a single, monolithic structure that serves as both an electrically-active element and a mechanical support element of the surge arrester. The surge arrester also includes an insulative housing surrounding the stack of components. The stack of components is capable of withstanding current pulses having magnitudes of 65 kA and durations of 4/10 microseconds without significant degradation in operating performance of the stack of components.

Abstract: A surge arrester includes a stack of components having at least one varistor. Each component has end faces, at least one of which is mechanically bonded to an end face of another component such that the combined components of the stack define a single, monolithic structure that serves as both an electrically-active element and a mechanical support element of the surge arrester. The surge arrester also includes an insulative housing surrounding the stack of components. The stack of components is capable of withstanding current pulses having magnitudes of 65 kA and durations of 4/10 microseconds without significant degradation in operating performance of the stack of components.

Abstract: A multilayer varistor has interleaved layers of ceramic material and electrode material. Each electrode layer is sandwiched between two ceramic layers. The ceramic material includes zinc oxide, ceramic structure influencing additives selected from the group consisting of bismuth oxide, boron oxide, chromium oxide, cobalt oxide, manganese oxide and tin oxide, and a grain growth influencing additive selected from the group consisting of antimony oxide, silicon dioxide and titanium dioxide.

Abstract: A partly hydrolyzed gelled polysiloxane mass is contacted with a solution of dopant metal compounds which diffuse therein under thermally controlled condition; alternatively, a partly hydrolyzed gelled polysiloxane mass containing distributed therein dopant metal compounds is contacted with a solvent into which said dopant metal compounds will partly diffuse under thermally controlled conditions.