Abstract: A transistor having a gate electrode, a source electrode, a drain electrode, a dielectric material and a channel region disposed between the source electrode and drain electrode. The channel region includes a portion doped with an impurity to change the fixed charge density within the portion relative to a remainder of the channel region.

Abstract: A transparent active-matrix display based on a substrate has a multiplicity of transparent active pixel elements arranged in an array and transparent electrical connections to each pixel, whereby each of the pixel elements is adapted to be set independently to two or more states. In some embodiments, the substrate may also be transparent.

Abstract: One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.

Abstract: Enhancement mode, field effect transistors wherein at least a portion of the transistor structure may be substantially transparent. One variant of the transistor includes a channel layer comprising a substantially insulating, substantially transparent, material selected from ZnO or SnO2. A gate insulator layer comprising a substantially transparent material is located adjacent to the channel layer so as to define a channel layer/gate insulator layer interface. A second variant of the transistor includes a channel layer comprising a substantially transparent material selected from substantially insulating ZnO or SnO2, the substantially insulating ZnO or SnO2 being produced by annealing. Devices that include the transistors and methods for making the transistors are also disclosed.

Abstract: Optical property normalization for a transparent electrical device is described. In an embodiment, an electrical device includes a plurality of laterally displaced regions that are substantially transparent. Each region of the plurality of regions includes a normalized surface that has an optical property that has a normalized value that is substantially the same, one to another. One of the regions includes a portion of an electrical component. Additionally, at least one of the regions includes beneath the normalized surface an additional surface and a spectral normalization structure. The additional surface has a value for the optical property that is not substantially the same as the normalized value. The spectral normalization structure is disposed with the additional surface such that the normalized surface of the at least one region exhibits the normalized value.

Abstract: A rectifying contact to an n-type oxide material and/or a substantially insulating oxide material includes a p-type oxide material. The p-type oxide material includes a copper species and a metal species, each of which are present in an amount ranging from about 10 atomic % to about 90 atomic % of total metal in the p-type oxide material. The metal species is selected from tin, zinc, and combinations thereof.

Abstract: A semiconductor film composition includes an oxide semiconductor material. At least one polyatomic ion is incorporated into the oxide semiconductor material.

Abstract: A thin-film transistor includes a substrate having a substantially outwardly protruding support structure formed thereon such that a portion adjacent to the structure is exposed. The support structure has opposed sidewalls sloped at an angle relative to the substrate surface. A stack is established over the portion and over a portion of an adjacent opposed sidewall. The stack includes an insulating layer. A channel material is established on at least a portion of the stack, thus forming a channel having a length substantially determined by a thickness of the insulating layer in relation to the adjacent opposed sidewall angle. A gate dielectric is established on at least a portion of the channel material and a gate electrode is established on at least a portion of the gate dielectric.

Abstract: A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: This invention relates to a method of encapsulating nano-dimensional structures, comprising: depositing at least one material upon a substrate such that the material includes at least one portion; and creating an oxidized layer located substantially adjacent to the deposited material such that the at least one portion of the deposited material becomes substantially encapsulated by a portion of the oxidized layer.

Abstract: This invention relates to a method of fabricating nano-dimensional structures, comprising: depositing at least one deformable material upon a substrate such that the material includes at least one portion; and creating an oxidizable layer located substantially adjacent to the deposited deformable material such that at least a portion of the oxidized portion of the oxidizable layer interacts with the at least one portion of the deformable material to apply a localized pressure upon the at least one portion of the deformable material.

Abstract: An electroluminescent device using an inorganic phosphor configured to produce electroluminescence from the recombination of injected holes and injected electrons is disclosed. A controllable hole injection structure in contact with the inorganic phosphor controls a rate of hole injection into the inorganic phosphor based on a first applied control voltage. A controllable electron injection structure in contact with the inorganic phosphor and separated from the controllable hole injection structure controls a rate of electron injection into the inorganic phosphor based on a second applied control voltage.

Abstract: A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

Abstract: Embodiments of methods, apparatuses, devices and systems associated with a thin-film device are disclosed.

Abstract: A method for forming a conductive material on a substrate includes laser annealing a selected portion of a blanket coated material to form a conductive region.

Abstract: An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

Abstract: A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.

Abstract: In one method of forming a semiconductor device, a first electrode is formed electrically coupled with a semiconductor material. After the first electrode is formed, an insulator is formed over the semiconductor material adjoining the first electrode and extending a selected distance from the first electrode. After the insulator is formed, a second electrode is formed electrically coupled with the semiconductor material adjoining the insulator.