Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a thin film component are described.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed transistor having a multilayer dielectric are described.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a component having dielectric sub-layers are described.

Abstract: Embodiments of methods, apparatuses, components, and/or systems for forming transistor having a dual layer dielectric are described.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a passivation layer are described.

Abstract: A thin-film transistor (TFT) is fabricated by providing a substrate, depositing and patterning a metal gate, anodizing the patterned metal gate to form a gate dielectric on the metal gate, depositing and patterning a channel layer comprising a multi-cation oxide over at least a portion of the gate dielectric, and depositing and patterning a conductive source and conductive drain spaced apart from each other and disposed in contact with the channel layer.

Abstract: A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.

Abstract: Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.

Abstract: A semiconductor device can include a channel including an oxide comprising a combination of isovalent cations selected from within the D block and the P block of the Periodic Table.

Abstract: A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

Abstract: A double-injection field-effect transistor has an anode, a cathode, a substantially transparent channel, a substantially transparent gate insulator, and at least one substantially transparent gate electrode. The transistor may also have a substantially transparent anode and/or cathode. The transistor may also be formed on a substantially transparent substrate. Electrode contacts and electrical interconnection leads may also be substantially transparent. Methods for making and using such double-injection field-effect transistors are also disclosed.

Abstract: Devices including a substantially transparent dielectric and methods of forming such devices are disclosed.

Abstract: A method includes forming a fluid including an inorganic semiconductor material, depositing a layer of said fluid on a substrate to form a film, and curing said film to form a porous semiconductor film.

Abstract: Optical property normalization for a transparent electrical device is described. In an embodiment, an electrical device includes a plurality of laterally displaced regions that are substantially transparent. Each region of the plurality of regions includes a normalized surface that has an optical property that has a normalized value that is substantially the same, one to another. One of the regions includes a portion of an electrical component. Additionally, at least one of the regions includes beneath the normalized surface an additional surface and a spectral normalization structure. The additional surface has a value for the optical property that is not substantially the same as the normalized value. The spectral normalization structure is disposed with the additional surface such that the normalized surface of the at least one region exhibits the normalized value.

Abstract: A semiconductor device can include a channel including a first binary oxide and a second binary oxide.

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-gallium, cadmium-gallium, cadmium-indium.

Abstract: One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.

Abstract: A semiconductor device can include a channel including a gallium oxide film.

Abstract: One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx wherein each A is selected from the group of Ga, In, each B is selected from the group of Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.