Patents by Inventor Ravi Keshav Joshi

Ravi Keshav Joshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170110331
    Abstract: A method for forming a semiconductor device includes etching, in a masked etching process, through a layer stack located on a surface of a semiconductor substrate to expose the semiconductor substrate at unmasked regions of the layer stack. The method further includes etching, in a selective etching process, at least a first layer of the layer stack located adjacently to the semiconductor substrate. A second layer of the layer stack is less etched or non-etched compared to the selective etching of the first layer of the layer stack, such that the first layer of the layer stack is laterally etched back between the semiconductor substrate and the second layer of the layer stack. The method further includes growing semiconductor material on regions of the surface of the semiconductor substrate exposed after the selective etching process.
    Type: Application
    Filed: October 14, 2016
    Publication date: April 20, 2017
    Inventors: Ravi Keshav Joshi, Johannes Baumgartl, Georg Ehrentraut, Petra Fischer, Richard Gaisberger, Christoph Gruber, Martin Poelzl, Juergen Steinbrenner
  • Publication number: 20170005091
    Abstract: A semiconductor device includes a semiconductor laminar structure arranged on a semiconductor substrate. The semiconductor laminar structure includes a first doping region of a field effect transistor structure and at least a part of a body region of the field effect transistor structure. The body region has a first conductivity type and the first doping region has a second conductivity type. The semiconductor device further includes an electrically conductive contact structure providing an electrical contact to the first doping region of the field effect transistor structure and to the body region of the field effect transistor structure at one or more sidewalls of the semiconductor laminar structure.
    Type: Application
    Filed: June 29, 2016
    Publication date: January 5, 2017
    Inventors: Ravi Keshav Joshi, Johannes Baumgartl, Christoph Gruber, Andreas Haghofer, Martin Poelzl, Juergen Steinbrenner
  • Publication number: 20160218033
    Abstract: A method of forming a metallization layer over a semiconductor substrate includes depositing a blanket layer of a diffusion barrier liner over an inter level dielectric layer, and depositing a blanket layer of an intermediate layer over the diffusion barrier liner. A blanket layer of a power metal layer including copper is deposited over the intermediate layer. The intermediate layer includes a solid solution of a majority element and copper. The intermediate layer has a different etch selectivity from the power metal layer. After depositing the power metal layer, structuring the power metal layer, the intermediate layer, and the diffusion barrier liner.
    Type: Application
    Filed: January 28, 2015
    Publication date: July 28, 2016
    Inventors: Ravi Keshav Joshi, Juergen Steinbrenner, Christian Fachmann, Petra Fischer, Roman Roth
  • Publication number: 20150280287
    Abstract: A battery includes a first substrate having a first main surface, a second substrate made of a conducting material or semiconductor material, and a carrier of an insulating material. The carrier has a first and a second main surfaces, the second substrate being attached to the first main surface of the carrier. An opening is formed in the second main surface of the carrier to uncover a portion of a second main surface of the second substrate. The second main surface of the carrier is attached to the first substrate, thereby forming a cavity. The battery further includes an electrolyte disposed in the cavity.
    Type: Application
    Filed: March 31, 2014
    Publication date: October 1, 2015
    Inventors: Ravi Keshav Joshi, Alexander Breymesser, Bernhard Goller, Kamil Karlovsky, Francisco Javier Santos Rodriguez, Peter Zorn
  • Publication number: 20150280288
    Abstract: A lithium ion battery includes a first substrate having a first main surface, and a lid including an insulating material. The lid is attached to the first main surface of the first substrate, and a cavity is defined between the first substrate and the lid. The lithium ion battery further includes an electrical interconnection element in the lid, the electrical interconnection element providing an electrical connection between a first main surface and a second main surface of the lid. The lithium ion battery further includes an electrolyte in the cavity, an anode at the first substrate, the anode including a component made of a semiconductor material, and a cathode at the lid.
    Type: Application
    Filed: March 31, 2014
    Publication date: October 1, 2015
    Inventors: Vijaye Kumar Rajaraman, Kamil Karlovsky, Thomas Neidhart, Karl Mayer, Rainer Leuschner, Christine Moser, Ravi Keshav Joshi, Alexander Breymesser, Bernhard Goller, Francisco Javier Santos Rodriguez, Peter Zorn