Abstract: Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) making a first amorphous layer in a top layer of the semiconductor substrate by a suitable implant, the first amorphous layer having a first depth, c) implanting a first dopant into the semiconductor substrate to provide the first amorphous layer with a first doping profile, d) applying a first solid phase epitaxial regrowth action to partially regrow the first amorphous layer and form a second amorphous layer having a second depth that is less than the first depth and activate the first dopant, e) implanting a second dopant into the semiconductor substrate to provide the second amorphous layer with a second doping profile with a higher doping concentration than the first doping profile, f) applying a second solid phase epitaxial regrowth action to regrow the second amorphous layer and activate the second dopant.

Abstract: The invention relates to a semiconductor device with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region, a base region and a collector region which are respectively of the N-type conductivity, the P-type conductivity and the N-type conductivity by the provision of suitable doping atoms, wherein the base region comprises a mixed crystal of silicon and germanium, the base region is separated from the emitter region by an intermediate region of silicon having a doping concentration which is lower than the doping concentration of the emitter region and with a thickness smaller than the thickness of the emitter region, and the emitter region comprises a sub-region comprising a mixed crystal of silicon and germanium which is positioned at the side of emitter region remote from the intermediate region.

Abstract: Method of producing a semiconductor device, comprising: a) providing a semiconductor substrate, b) making a first amorphous layer in a top layer of the semiconductor substrate by a suitable implant, the first amorphous layer having a first depth, c) implanting a first dopant into the semiconductor substrate to provide the first amorphous layer with a first doping profile, d) applying a first solid phase epitaxial regrowth action to partially regrow the first amorphous layer and form a second amorphous layer having a second depth that is less than the first depth and activate the first dopant, e) implanting a second dopant into the semiconductor substrate to provide the second amorphous layer with a second doping profile with a higher doping concentration than the first doping profile, f) applying a second solid phase epitaxial regrowth action to regrow the second amorphous layer and activate the second dopant.

Abstract: The invention relates to a semiconductor device (10) with a substrate and a semiconductor body of silicon comprising a bipolar transistor with an emitter region (1), a base region (2) and a collector region (3) which are respectively of the N-type conductivity, the P-type conductivity and the N-type conductivity by the provision of suitable doping atoms, wherein the base region (2) comprises a mixed crystal of silicon and germanium, the base region (2) is separated from the emitter region by an intermediate region (22) of silicon having a doping concentration which is lower than the doping concentration of the emitter region (1) and with a thickness smaller than the thickness of the emitter region (1) and the emitter region (1) comprises a sub-region comprising a mixed crystal of silicon and germanium which is positioned at the side of emitter region (1) remote from the intermediate region (22).

Abstract: The invention relates to a method of manufacturing a semiconductor device (10) with a field effect transistor, in which method a semiconductor body (1) of silicon is provided at a surface thereof with a source region (2) and a drain region (3) of a first conductivity type, which both are provided with extensions (2A,3A) and with a channel region (4) of a second conductivity type, opposite to the first conductivity type, between the source region (2) and the drain region (3) and with a gate region (5) separated from the surface of the semiconductor body (1) by a gate dielectric (6) above the channel region (4), and wherein a pocket region (7) of the second conductivity type and with a doping concentration higher than the doping concentration of the channel region (4) is formed below the extensions (2A,3A), and wherein the pocket region (7) is formed by implanting heavy ions in the semiconductor body (1), after which implantation a first annealing process is done at a moderate temperature and a second annealing