Abstract: A multi-layer charged particle beam characterization system is disclosed, and method for using the same. A typical embodiment includes a plurality of two-sided metal plates, arranged as a stack, each metal plate having an electrical contact tab extending from at least one common edge of the metal plate, and a plurality of insulator films disposed between adjacent metal plates, each insulator film is sized to match its corresponding metal plate. The tabs are coupled to a printed circuit board and connected to an external electrical connector to register a number of metal plates and insulator layers through which a charged particle beam has penetrated.

Abstract: A multi-layer charged particle beam characterization system is disclosed, and method for using the same. A typical embodiment includes a plurality of two-sided metal plates, arranged as a stack, each metal plate having an electrical contact tab extending from at least one common edge of the metal plate, and a plurality of insulator films disposed between adjacent metal plates, each insulator film is sized to match its corresponding metal plate. The tabs are coupled to a printed circuit board and connected to an external electrical connector to register a number of metal plates and insulator layers through which a charged particle beam has penetrated.

Abstract: A multi-layer charged particle beam characterization system is disclosed, and method for using the same. A typical embodiment includes a plurality of two-sided metal plates, arranged as a stack, each metal plate having an electrical contact tab extending from at least one common edge of the metal plate, and a plurality of insulator films disposed between adjacent metal plates, each insulator film is sized to match its corresponding metal plate. The tabs are coupled to a printed circuit board and connected to an external electrical connector to register a number of metal plates and insulator layers through which a charged particle beam has penetrated.

Abstract: A multi-layer charged particle beam characterization system is disclosed, and method for using the same. A typical embodiment includes a plurality of two-sided metal plates, arranged as a stack, each metal plate having an electrical contact tab extending from at least one common edge of the metal plate, and a plurality of insulator films disposed between adjacent metal plates, each insulator film sized to match its corresponding metal plate. The tabs are coupled to a printed circuit board and connected to an external electrical connector to register a number of metal plates and insulator layers through which a charged particle beam has penetrated.

Abstract: An ion beam implant system having a source for producing multiple beamlets. The beamlets are emitted from the source and their intensity is controlled by an electrode array under control of a control apparatus. Downstream from the electrode array a resolving magnet shapes the beamlets and directs them to a region where they undergo further acceleration before impinging upon a workpiece. In a preferred technique, the workpiece is typically a silicon wafer and the ions are utilized for controlled doping of that wafer without need for ion beam scanning to selected portions of the workpiece or wafer movement through the ion beam during implantation.