Patents by Inventor Rebecca J. Nikolic
Rebecca J. Nikolic has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11721771Abstract: According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.Type: GrantFiled: November 14, 2017Date of Patent: August 8, 2023Assignee: Lawrence Livermore National Security, LLCInventors: Lars Voss, Clint Frye, Roger A. Henderson, John Winter Murphy, Rebecca J. Nikolic, Dongxia Qu, Qinghui Shao, Mark A. Stoyer
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Publication number: 20220350039Abstract: A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity. A thickness the scintillator material is sufficient to protect the photovoltaic portion from significant radiation damage.Type: ApplicationFiled: July 12, 2022Publication date: November 3, 2022Inventors: Joshua Jarrell, Nerine Cherepy, John Winter Murphy, Rebecca J. Nikolic, Erik Lars Swanberg, JR.
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Patent number: 11415713Abstract: A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity.Type: GrantFiled: October 16, 2020Date of Patent: August 16, 2022Assignee: Lawrence Livermore National Security, LLCInventors: Joshua Jarrell, Nerine Cherepy, John Winter Murphy, Rebecca J. Nikolic, Erik Lars Swanberg, Jr.
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Publication number: 20220120920Abstract: A product includes a transparent scintillator material, a beta emitter material having an end-point energy of greater than 225 kiloelectron volts (keV), and a photovoltaic portion configured to convert light emitted by the scintillator material to electricity.Type: ApplicationFiled: October 16, 2020Publication date: April 21, 2022Inventors: Joshua Jarrell, Nerine Cherepy, John Winter Murphy, Rebecca J. Nikolic, Erik Lars Swanberg, JR.
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Patent number: 11133190Abstract: According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.Type: GrantFiled: May 4, 2018Date of Patent: September 28, 2021Assignee: Lawrence Livermore National Security, LLCInventors: Sara E. Harrison, Clint Frye, Rebecca J. Nikolic, Qinghui Shao, Lars F. Voss
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Patent number: 11024734Abstract: In one embodiment, a method of forming a vertical transistor includes forming a layer comprising a semiconductor material above a substrate, defining three dimensional (3D) structures in the layer, forming a second region in at least one vertical sidewall of each 3D structure, and forming an isolation region between the 3D structures. In another embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate comprising a semiconductor material, an array of 3D structures above the substrate, and an isolation region positioned between the 3D structures. Each 3D structure includes the semiconductor material. Each 3D structure also includes a first region having a first conductivity type and a second region having a second conductivity type, the second region including a portion of at least one vertical sidewall of the 3D structure.Type: GrantFiled: January 4, 2017Date of Patent: June 1, 2021Assignee: Lawrence Livermore National Security, LLCInventors: Adam Conway, Sara Elizabeth Harrison, Rebecca J. Nikolic, Qinghui Shao, Lars Voss
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Patent number: 10930506Abstract: In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.Type: GrantFiled: June 19, 2019Date of Patent: February 23, 2021Assignee: Lawrence Livermore National Security, LLCInventors: Lars Voss, Daniel Max Dryden, Clint Frye, Sara Elizabeth Harrison, Rebecca J. Nikolic, Qinghui Shao
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Patent number: 10903371Abstract: According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.Type: GrantFiled: January 7, 2016Date of Patent: January 26, 2021Assignees: Lawrence Livermore National Security, LLC, The Regents of the University of CaliforniaInventors: Adam Conway, Sara Elizabeth Harrison, Rebecca J. Nikolic, Qinghui Shao, Lars Voss, Srabanti Chowdhury
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Patent number: 10699820Abstract: According to one embodiment, a product includes an array of three dimensional structures, where each of the three dimensional structure includes a semiconductor material; a cavity region between each of the three dimensional structures; and a first material in contact with at least one surface of each of the three dimensional structures, where the first material is configured to provide high energy particle and/or ray emissions.Type: GrantFiled: March 14, 2014Date of Patent: June 30, 2020Assignee: Lawrence Livermore National Security, LLCInventors: Rebecca J. Nikolic, Adam P. Conway, Roger A. Henderson, Victor P. Karpenko, Qinghui Shao, Dawn A. Shaughnessy, Mark A. Stoyer, Lars F. Voss
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Patent number: 10685758Abstract: According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.Type: GrantFiled: April 21, 2017Date of Patent: June 16, 2020Assignee: Lawrence Livermore National Security, LLCInventors: Clint Frye, Roger A. Henderson, John Winter Murphy, Rebecca J. Nikolic, Dongxia Qu, Qinghui Shao, Mark A. Stoyer, Lars Voss
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Publication number: 20190393038Abstract: In one embodiment, a product includes a structure comprising a material of a Group-III-nitride having a dopant, where a concentration of the dopant in the structure has a concentration gradient characteristic of diffusion of the dopant inward from at least a portion of a surface of the structure in a direction substantially normal to the portion of the surface. The structure has less than 1% decomposition of the Group-III-nitride at the surface of the structure.Type: ApplicationFiled: June 19, 2019Publication date: December 26, 2019Inventors: Lars Voss, Daniel Max Dryden, Clint Frye, Sara Elizabeth Harrison, Rebecca J. Nikolic, Qinghui Shao
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Patent number: 10134927Abstract: A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.Type: GrantFiled: July 8, 2016Date of Patent: November 20, 2018Assignee: Lawrence Livermore National Security, LLCInventors: Lars Voss, Mihail Bora, George Caporaso, Adam Conway, Hoang T. Nguyen, Rebecca J. Nikolic, Stephen E. Sampayan, Sangtae Park
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Publication number: 20180323074Abstract: According to one embodiment, a method includes performing a plasma etching process on a masked III-V semiconductor, and forming a passivation layer on etched portions of the III-V semiconductor. The passivation layer includes at least one of a group III element and/or a metal from the following: Ni, Cr, W, Mo, Pt, Pd, Mg, Ti, Zr, Hf, Y, Ta, and Sc.Type: ApplicationFiled: May 4, 2018Publication date: November 8, 2018Inventors: Sara Elizabeth Harrison, Clint Frye, Rebecca J. Nikolic, Qinghui Shao, Lars Voss
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Patent number: 10020235Abstract: In various approaches room-temperature gamma detector longevity may be improved by selectively removing, or selectively incorporating, alternate halogen component(s) from select surfaces of the detector. According to one embodiment, a method of improving operational longevity of a thallium bromide (TlBr)-based detector includes: selectively treating one or more surfaces of the TlBr-based detector to produce a surface substantially comprising pure TlBr. Similar techniques may be employed to restore a degraded or failed detector. According to another embodiment, a method of forming a TlBr-based detector exhibiting improved operational longevity includes: selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components.Type: GrantFiled: November 1, 2016Date of Patent: July 10, 2018Assignee: Lawrence Livermore National Security, LLCInventors: Lars Voss, Adam Conway, Robert T. Graff, Art Nelson, Rebecca J. Nikolic, Stephen A. Payne, Erik Lars Swanberg, Jr.
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Publication number: 20180145187Abstract: According to one embodiment, a device includes a first electrode, a second electrode spaced from the first electrode, a well extending between the first electrode and the second electrode, one or more chalcogens in the well, and at least one halogen mixed with the one or more chalcogens in the well. In addition, the chalcogens are selected from the group consisting of sulfur, selenium, tellurium, and polonium.Type: ApplicationFiled: November 14, 2017Publication date: May 24, 2018Inventors: Lars Voss, Clint Frye, Roger A. Henderson, John Winter Murphy, Rebecca J. Nikolic, Dongxia Qu, Qinghui Shao, Mark A. Stoyer
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Publication number: 20180122977Abstract: A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of ˜0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.Type: ApplicationFiled: November 3, 2016Publication date: May 3, 2018Inventors: Lars Voss, Adam Conway, Art Nelson, Rebecca J. Nikolic, Stephen A. Payne, Erik Lars Swanberg, Jr.
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Publication number: 20180122713Abstract: In various approaches room-temperature gamma detector longevity may be improved by selectively removing, or selectively incorporating, alternate halogen component(s) from select surfaces of the detector. According to one embodiment, a method of improving operational longevity of a thallium bromide (TlBr)-based detector includes: selectively treating one or more surfaces of the TlBr-based detector to produce a surface substantially comprising pure TlBr. Similar techniques may be employed to restore a degraded or failed detector. According to another embodiment, a method of forming a TlBr-based detector exhibiting improved operational longevity includes: selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components.Type: ApplicationFiled: November 1, 2016Publication date: May 3, 2018Inventors: Lars Voss, Adam Conway, Robert T. Graff, Art Nelson, Rebecca J. Nikolic, Stephen A. Payne, Erik Lars Swanberg, Jr.
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Patent number: 9960310Abstract: A combination of doping, rapid pulsed optical and/or thermal annealing, and unique detector structure reduces or eliminates sources of electronic noise in a CdZnTe (CZT) detector. According to several embodiments, methods of forming a detector exhibiting minimal electronic noise include: pulse-annealing at least one surface of a detector comprising CZT for one or more pulses, each pulse having a duration of ˜0.1 seconds or less. The at least one surface may optionally be ion-implanted. In another embodiment, a CZT detector includes a detector surface with two or more electrodes operating at different electric potentials and coupled to the detector surface; and one or more ion-implanted CZT surfaces on or in the detector surface, each of the one or more ion-implanted CZT surfaces being independently connected to one of the two or more electrodes and the surface of the detector. At least two of the ion-implanted surfaces are in electrical contact.Type: GrantFiled: November 3, 2016Date of Patent: May 1, 2018Assignee: Lawrence Livermore National Security, LLCInventors: Lars Voss, Adam Conway, Art Nelson, Rebecca J. Nikolic, Stephen A. Payne, Erik Lars Swanberg, Jr.
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Publication number: 20180013029Abstract: A photoconductive switch consisting of an optically actuated photoconductive material, e.g. a wide bandgap semiconductor such as SiC, situated between opposing electrodes. The electrodes are created using various methods in order to maximize reliability by reducing resistive heating, current concentrations and filamentation, and heating and ablation due to the light source. This is primarily accomplished by the configuration of the electrical contact geometry, choice of contacts metals, annealing, ion implantation, creation of recesses within the SiC, and the use of coatings to act as encapsulants and anti-reflective layers.Type: ApplicationFiled: July 8, 2016Publication date: January 11, 2018Inventors: Lars Voss, Mihail Bora, George Caporaso, Adam Conway, Hoang T. Nguyen, Rebecca J. Nikolic, Stephen E. Sampayan, Sangtae Park
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Publication number: 20170221595Abstract: According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.Type: ApplicationFiled: April 21, 2017Publication date: August 3, 2017Inventors: Clint Frye, Roger A. Henderson, John Winter Murphy, Rebecca J. Nikolic, Dongxia Qu, Qinghui Shao, Mark A. Stoyer, Lars Voss