Abstract: An external master portal system consisting of a standalone primary control interface referred to as a master portal which is network-connected to subordinate gateway controllers located at the peer connection points to the network, used to define and control the permitted transfer of data across a peer-to-peer network is disclosed. Further, control of the master portal can be provided to a third party whose data is only a part of broad range of data stored or used at any of the peer sites.

Abstract: An external master portal system consisting of a standalone primary control interface referred to as a master portal which is network-connected to subordinate gateway controllers located at the peer connection points to the network, used to define and control the permitted transfer of data across a peer-to-peer network is disclosed. Further, control of the master portal can be provided to a third party whose data is only a part of broad range of data stored or used at any of the peer sites.

Abstract: A radio frequency transmitting shutter operable at low power and high speed for use in the protection of a radar or electronic warfare array comprising a multiplicity of individual conductive beam members interconnected by electrostatic switches formed using high yield, common photolithographic methods is disclosed. Further, a photosensitive embodiment of this device which would allow activation of the shutter wherever the light falls upon the shutter during radar protection, is disclosed and claimed.

Abstract: Localized epitaxial growth of GaAs from a silicon monocrystalline substrate to provide a three-dimensional Si-GaAs structure and method. The silicon has an insulating layer deposited thereover and a window is opened through the layer to expose a small area of the underlying silicon from which silicon is epitaxially grown until the window is nearly full whereupon a thin buffer layer such as germanium is epitaxially grown over the epi-silicon to fill the window. Al.sub.x Ga.sub.1-x As (where x.gtoreq.0) is then locally epitaxially grown from the buffer layer and it grows laterally as well as vertically to cover the surrounding insulating layer surface and provide a site for high frequency electronics.