Patents by Inventor Rei Hasegawa

Rei Hasegawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11226421
    Abstract: According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.
    Type: Grant
    Filed: March 11, 2020
    Date of Patent: January 18, 2022
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Fumihiko Aiga, Atsushi Wada, Kohei Nakayama, Yuko Nomura, Sara Yoshio, Rei Hasegawa, Isao Takasu
  • Patent number: 11158751
    Abstract: According to an embodiment, a photoelectric conversion element includes a photoelectric conversion layer that converts light to charges. The photoelectric conversion layer contains oligothiophene and fullerene selected from a group including a fullerene and derivatives thereof. A content ratio of the oligothiophene and the fullerene is 500:1 to 5:1 by weight.
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: October 26, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Atsushi Wada, Rei Hasegawa
  • Patent number: 11152575
    Abstract: According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, and an intermediate layer provided between the first conductive layer and the second conductive layer. The intermediate layer includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of an n-type, and the second semiconductor region is of a p-type. The first semiconductor region includes at least one selected from the group consisting of fullerene and a fullerene derivative. The second semiconductor region includes at least one selected from the group consisting of quinacridone and a quinacridone derivative. A ratio of a weight of the second semiconductor region per unit volume to a weight of the first semiconductor region per unit volume in the intermediate layer is greater than 5.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: October 19, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Atsushi Wada, Isao Takasu, Rei Hasegawa
  • Patent number: 11125895
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: September 21, 2021
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kohei Nakayama, Fumihiko Aiga, Go Kawata, Isao Takasu, Yuko Nomura, Satomi Taguchi, Hyangmi Jung, Atsushi Wada, Rei Hasegawa
  • Patent number: 11081657
    Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.
    Type: Grant
    Filed: September 10, 2019
    Date of Patent: August 3, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsushi Wada, Isao Takasu, Rei Hasegawa, Fumihiko Aiga
  • Patent number: 11037993
    Abstract: A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.
    Type: Grant
    Filed: February 28, 2020
    Date of Patent: June 15, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kohei Nakayama, Fumihiko Aiga, Atsushi Wada, Isao Takasu, Yuko Nomura, Sara Yoshio, Rei Hasegawa
  • Publication number: 20210055435
    Abstract: According to one embodiment, a radiation detector includes a first layer including a metal complex, a first conductive layer, a second conductive layer provided between the first layer and the first conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer.
    Type: Application
    Filed: March 11, 2020
    Publication date: February 25, 2021
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Fumihiko AIGA, Atsushi WADA, Kohei NAKAYAMA, Yuko NOMURA, Sara YOSHIO, Rei HASEGAWA, lsao TAKASU
  • Patent number: 10930861
    Abstract: According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 ?m or more.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: February 23, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao Takasu, Hyangmi Jung, Kohei Nakayama, Yuko Nomura, Rei Hasegawa
  • Publication number: 20200395415
    Abstract: A detection device according to an embodiment of the present disclosure includes a plurality of semiconductor layers, each including a plurality of electrode regions and a semiconductor region. The plurality of electrode regions are: arranged at intervals in a cross direction crossing a thickness direction; configured to generate electric charges by a photoelectric effect of irradiation of radiation; and configured to produce an electric field in the cross direction by voltage application. The semiconductor region is provided at least between the electrode regions adjacent to one another in the cross direction. The plurality of semiconductor layers are stacked in the thickness direction.
    Type: Application
    Filed: February 28, 2020
    Publication date: December 17, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kohei NAKAYAMA, Fumihiko Aiga, Atsushi Wada, Isao Takasu, Yuko Nomura, Sara Yoshio, Rei Hasegawa
  • Patent number: 10840465
    Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: November 17, 2020
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi Jung, Satomi Taguchi, Isao Takasu, Yuko Nomura, Rei Hasegawa
  • Publication number: 20200313094
    Abstract: According to one embodiment, a radiation detector includes a first conductive layer, a second conductive layer, and a first layer. The first layer is provided between the first conductive layer and the second conductive layer. The first layer includes a first region and a second region. The first region includes a metal complex including a first metallic element. The second region includes an organic semiconductor material. The first metallic element includes at least one selected from the group consisting of Ir, Pt, Pb, and Cu.
    Type: Application
    Filed: September 10, 2019
    Publication date: October 1, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Atsushi WADA, lsao TAKASU, Rei HASEGAWA, Fumihiko AIGA
  • Patent number: 10761222
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. A bias is applied to the first electrode. The organic conversion layer is arranged between the first electrode and the second electrode, and is configured to convert energy of a radiation into an electric charge. The third electrode is arranged in the organic conversion layer.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: September 1, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Kohei Nakayama, Fumihiko Aiga, Go Kawata, Isao Takasu, Yuko Nomura, Satomi Taguchi, Hyangmi Jung, Atsushi Wada, Rei Hasegawa
  • Publication number: 20200264320
    Abstract: A radiation detector includes a first scintillator, a second scintillator, a first photoelectric conversion layer, and a second photoelectric conversion layer. The first scintillator converts ? rays into first scintillation light. The second scintillator converts the ? rays into second scintillation light. The first photoelectric conversion layer is provided between the first scintillator and the second scintillator and converts the first scintillation light into electric charges. The second photoelectric conversion layer is provided between the first photoelectric conversion layer and the second scintillator and converts the second scintillation light into electric charges. The first scintillator, the second scintillator, the first photoelectric conversion layer, and the second photoelectric conversion layer are each formed with an organic material as a main component. The thickness of the second scintillator is larger than the thickness of the first scintillator.
    Type: Application
    Filed: September 9, 2019
    Publication date: August 20, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Fumihiko AIGA, Rei Hasegawa, lsao Takasu
  • Patent number: 10595798
    Abstract: A detection apparatus according to an embodiment includes first detectors, a first electrode, second detectors and a second electrode. The first detectors detect a photon. The first electrode is electrically connected to each of the first detectors. The second detectors detect a photon. The second electrode is electrically connected to each of the second detectors. The number of first detectors is less than the number of second detectors.
    Type: Grant
    Filed: August 23, 2017
    Date of Patent: March 24, 2020
    Assignee: Canon Medical Systems Corporation
    Inventors: Go Kawata, Keita Sasaki, Rei Hasegawa
  • Publication number: 20200091440
    Abstract: According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 ?m or more.
    Type: Application
    Filed: March 5, 2019
    Publication date: March 19, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Isao TAKASU, Hyangmi JUNG, Kohei NAKAYAMA, Yuko NOMURA, Rei HASEGAWA
  • Publication number: 20200083298
    Abstract: According to one embodiment, a radiation detector includes a first member, a first electrode, a second electrode, and an organic photoelectric conversion layer. The first member converts radiation into light and has a first surface. The first surface includes a first portion and a second portion. The first electrode is provided at the first portion. The second electrode is provided at the second portion. A first intermediate region of the organic photoelectric conversion layer is provided between the first electrode and the second electrode.
    Type: Application
    Filed: March 11, 2019
    Publication date: March 12, 2020
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Rei Hasegawa, Kohei Nakayama, Isao Takasu
  • Patent number: 10566558
    Abstract: According to an embodiment, a photodetection element includes a photoelectric conversion layer having a density increasing from one end side to another end side in a thickness direction and a uniform composition in the thickness direction to convert energy of radiation into charges.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: February 18, 2020
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Mitsuyoshi Kobayashi, Satomi Taguchi, Isao Takasu, Rei Hasegawa
  • Publication number: 20200035934
    Abstract: According to an embodiment, a producing method of a radiation detection element, includes: forming an organic semiconductor layer by applying an organic semiconductor solution onto a first conductive layer formed on a support substrate; forming a second conductive layer on the organic semiconductor layer; sealing a laminated body of the first conductive layer, the organic semiconductor layer, and the second conductive layer, formed on the support substrate, with a sealing member; and applying heat to the laminated body sealed with the sealing member. In at least one of forming of the organic layer and forming of the second conductive layer, a forming environment of the organic semiconductor layer and the second conductive layer are adjusted such that the solvent content of the organic semiconductor layer is in a predetermined range.
    Type: Application
    Filed: March 5, 2019
    Publication date: January 30, 2020
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Hyangmi JUNG, Satomi TAGUCHI, Isao TAKASU, Yuko NOMURA, Rei Hasegawa
  • Publication number: 20190285759
    Abstract: According to an embodiment, a detection element includes a first electrode, a second electrode, an organic conversion layer, and a third electrode. The organic conversion layer is provided between the first electrode and the second electrode, and is configured to convert energy of a radiant ray into a charge. The third electrode is provided inside the organic conversion layer. Bias is applied to the third electrode.
    Type: Application
    Filed: September 6, 2018
    Publication date: September 19, 2019
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Kohei NAKAYAMA, Fumihiko AIGA, Go KAWATA, lsao TAKASU, Yuko NOMURA, Satomi TAGUCHI, Hyangmi JUNG, Atsushi WADA, Rei HASEGAWA
  • Patent number: 10408953
    Abstract: According to one embodiment, a radiation detector includes a metal member, a capacitor, and a first charge-sensitive amplifier. The metal member includes a first portion and a second portion. The capacitor is electrically connected to the second portion. The first charge-sensitive amplifier is electrically connected to the first portion. The first charge-sensitive amplifier outputs a signal corresponding to ?-rays incident on the metal member.
    Type: Grant
    Filed: August 31, 2018
    Date of Patent: September 10, 2019
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Rei Hasegawa, Kohei Nakayama