Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.

Abstract: The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity, and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: There is provided a solid state imaging apparatus including a pixel array in which a plurality of unit pixels are arranged two-dimensionally. Each pixel includes a photoelectric conversion element, a transfer transistor which transfers a charge accumulated in the photoelectric conversion element to floating diffusion, a reset transistor which resets the charge of the floating diffusion, and an output transistor which outputs the charge of the floating diffusion. The floating diffusion of at least one of the plurality of unit pixels is electrically connected via the output transistor.

Abstract: The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity, and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: There is provided a solid state imaging apparatus including a pixel array in which a plurality of unit pixels are arranged two-dimensionally. Each pixel includes a photoelectric conversion element, a transfer transistor which transfers a charge accumulated in the photoelectric conversion element to floating diffusion, a reset transistor which resets the charge of the floating diffusion, and an output transistor which outputs the charge of the floating diffusion. The floating diffusion of at least one of the plurality of unit pixels is electrically connected via the output transistor.

Abstract: The present disclosure relates to a solid-state imaging device, an AD converter, and an electronic apparatus that improve a crosstalk characteristic. The AD converter includes a comparator that compares the pixel signal with the reference signal, a pixel signal side capacitor, and a reference signal side capacitor. The pixel signal side capacitor and the reference signal side capacitor are formed such that a first parasitic capacity, and a second parasitic capacity are substantially the same. The present technology is applicable to a CMOS image sensor, for example.

Abstract: A signal processing device includes a control unit that suspends supplying of a signal to an A/D conversion unit which performs A/D conversion, during an A/D conversion period in which the A/D conversion is performed on the signal that depends on an electric charge read from a pixel; and a maintenance unit that maintains a signal value of the signal in a state where the signal is supplied by the control unit to the A/D conversion unit and that supplies the maintained signal value to the A/D conversion unit in a state where the supplying of the signal to the A/D conversion unit is suspended by the control unit.

Abstract: There is provided a solid state imaging apparatus including a pixel array in which a plurality of unit pixels are arranged two-dimensionally. Each pixel includes a photoelectric conversion element, a transfer transistor which transfers a charge accumulated in the photoelectric conversion element to floating diffusion, a reset transistor which resets the charge of the floating diffusion, and an output transistor which outputs the charge of the floating diffusion. The floating diffusion of at least one of the plurality of unit pixels is electrically connected via the output transistor.

Abstract: The present technology relates to an image sensor and a control method for an image sensor which are capable of measuring illuminance of each color in an image sensor. Each of a plurality of pixel units includes a pixel and a reset transistor, and the pixel includes a photoelectric converting unit that performs photoelectric conversion on light of a certain color incident through a color filter and a transfer transistor that transfers charges obtained by the photoelectric conversion of the photoelectric converting unit and is controllable for each color. According to control of the transfer transistor, the charges are read from the photoelectric converting unit through the transfer transistor and the reset transistor, and a voltage corresponding to the charges is supplied to an AD converting unit connected to the reset transistor. The present technology can be applied to, for example, an image sensor that photographs an image.

Abstract: There is provided an image sensor that includes a pixel array section, a column processing section, and a row control section. The pixel array section is configured to include two or more shared pixel cells arranged in a two-dimensional array, the shared pixel cells each including a plurality of pixels that output electric signals by photoelectric conversion. The column processing section is configured to process the electric signals that are read at the same time from the shared pixel cells on a plurality of rows in the two-dimensional array. The row control section is configured to perform access control differently between one and another of the rows for reading the electric signals from the pixels in the shared pixel cells.

Abstract: An imaging element comprises a photoelectric conversion unit formed in a pixel region and configured to convert light into electrical charge. Further, the imaging element includes a transistor formed in the pixel region and configured to transfer electric charge from the photoelectric conversion unit. The photoelectric conversion unit of the imaging element may be connected to a well of the pixel region, where the well of the pixel region has a negative potential.

Abstract: The present technology relates to an image sensor and a control method for an image sensor which are capable of measuring illuminance of each color in an image sensor. Each of a plurality of pixel units includes a pixel and a reset transistor, and the pixel includes a photoelectric converting unit that performs photoelectric conversion on light of a certain color incident through a color filter and a transfer transistor that transfers charges obtained by the photoelectric conversion of the photoelectric converting unit and is controllable for each color. According to control of the transfer transistor, the charges are read from the photoelectric converting unit through the transfer transistor and the reset transistor, and a voltage corresponding to the charges is supplied to an AD converting unit connected to the reset transistor. The present technology can be applied to, for example, an image sensor that photographs an image.

Abstract: The present technology relates to an image sensor and a control method for an image sensor which are capable of measuring illuminance of each color in an image sensor. Each of a plurality of pixel units includes a pixel and a reset transistor, and the pixel includes a photoelectric converting unit that performs photoelectric conversion on light of a certain color incident through a color filter and a transfer transistor that transfers charges obtained by the photoelectric conversion of the photoelectric converting unit and is controllable for each color. According to control of the transfer transistor, the charges are read from the photoelectric converting unit through the transfer transistor and the reset transistor, and a voltage corresponding to the charges is supplied to an AD converting unit connected to the reset transistor. The present technology can be applied to, for example, an image sensor that photographs an image.

Abstract: A signal processing device includes a control unit that suspends supplying of a signal to an A/D conversion unit which performs A/D conversion, during an A/D conversion period in which the A/D conversion is performed on the signal that depends on an electric charge read from a pixel; and a maintenance unit that maintains a signal value of the signal in a state where the signal is supplied by the control unit to the A/D conversion unit and that supplies the maintained signal value to the A/D conversion unit in a state where the supplying of the signal to the A/D conversion unit is suspended by the control unit.

Abstract: A signal processing device includes a control unit that suspends supplying of a signal to an A/D conversion unit which performs A/D conversion, during an A/D conversion period in which the A/D conversion is performed on the signal that depends on an electric charge read from a pixel; and a maintenance unit that maintains a signal value of the signal in a state where the signal is supplied by the control unit to the A/D conversion unit and that supplies the maintained signal value to the A/D conversion unit in a state where the supplying of the signal to the A/D conversion unit is suspended by the control unit.