Abstract: The method for reducing carbon dioxide of the present invention includes a step (a) and a step (b) as follows. A step (a) of preparing an electrochemical cell. The electrochemical cell comprises a working electrode (21), a counter electrode (23) and a vessel (28). The vessel (28) stores an electrolytic solution (27). The working electrode (21) contains boron carbide. The electrolytic solution (27) contains carbon dioxide. The working electrode (21) and the counter electrode (23) are in contact with the electrolytic solution (27). A step (b) of applying a negative voltage and a positive voltage to the working electrode and the counter electrode, respectively, to reduce the carbon dioxide.

Abstract: A display device is provided with a pair of a first electrode and a second electrode at least one of which is transparent or translucent and a phosphor layer formed so as to be sandwiched between the first electrode and the second electrode, and the phosphor layer has a polycrystal structure made of a first semiconductor substance in which a second semiconductor substance different from the first semiconductor substance is segregated on a grain boundary of the polycrystal structure, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions.

Abstract: A device for reducing carbon dioxide includes a vessel for holding an electrolyte solution including carbon dioxide, a working electrode and a counter electrode. The working electrode contains metal hexaboride particles.

Abstract: The carbon dioxide reduction method of the present invention is a method including steps of: bringing an electrode (working electrode) containing a carbide of at least one element selected from Group V elements (vanadium, niobium, and tantalum) into contact with an electrolytic solution; and introducing carbon dioxide into the electrolytic solution to reduce the introduced carbon dioxide by the electrode. The material contained in the electrode, that is, the material containing a carbide of at least one element selected from Group V elements (vanadium, niobium, and tantalum) is the carbon dioxide reduction catalyst of the present invention.

Abstract: A plasma display panel includes: a front plate having a dielectric layer that is formed to cover display electrodes formed on a substrate, and a protective film that is formed on the dielectric layer; and a rear plate disposed facing the front plate so as to form a discharge space, which has a data electrode formed in a direction intersecting the display electrodes and has barrier ribs for partitioning the discharge space. The protective film is composed of oxide particles of a Group 2 component and contains phosphorus.

Abstract: A light emitting element includes: a first electrode and a second electrode provided as being opposed each other, at least one of the first electrode and the second electrode being transparent or translucent; and a phosphor layer sandwiched between the first electrode and the second electrode, from a direction that is perpendicular to main surfaces of the first and second electrodes. In this structure, the phosphor layer includes: a plurality of phosphor particles that are disposed within a plane of the phosphor layer; and a first and second insulating guides that sandwich two sides of each of the phosphor particles from a direction that is in parallel with the surface of the phosphor layer.

Abstract: This light emitting device includes a pair of electrodes at least one of which is transparent or translucent, and a phosphor layer that is sandwiched between the electrodes and has a polycrystalline structure made of a first semiconductor material, and in this structure, a second semiconductor material different from the first semiconductor material is segregated on a grain boundary of the polycrystalline structure. The first semiconductor material and the second semiconductor material preferably have semiconductor structures of conduction types that are different from each other. Moreover, the first semiconductor material preferably has an n-type semiconductor structure, and the second semiconductor material preferably has a p-type semiconductor structure. Furthermore, in the case where the first semiconductor material is a zinc-based material containing zinc, at least one of the paired electrodes is preferably made of a material containing zinc.

Abstract: A light emitting device of the invention includes an electron transporting layer, a hole transporting layer provided mutually facing the electron transporting layer with a distance between the hole transporting layer and the electron transporting layer, a phosphor layer having a layer of a plurality of semiconductor fine particles sandwiched between the electron transporting layer and the hole transporting layer, a first electrode provided facing the electron transporting layer and connected electrically, and a second electrode provided facing the hole transporting layer and connected electrically: in which the semiconductor fine particles composing the phosphor layer have a p-type part and an n-type part inside of the particles and have a pn-junction in the interface of the p-type part and the n-type part and are arranged in a manner that the p type part is partially brought into contact with the hole transporting layer and at the same time, the n type part is partially brought into contact with the electron

Abstract: A light emitting device is provided with: a pair of an anode and a cathode that are opposed to each other; and a phosphor layer, composed of a plurality of phosphor particles, that is sandwiched between the paired anode and cathode, from direction that is perpendicular to main surfaces of the anode and the cathode, and in this structure, each phosphor particle is a nitride semiconductor phosphor particle having a wurtzite crystal structure that contains an n-type nitride semiconductor portion and a p-type nitride semiconductor portion, with the n-type nitride semiconductor portion being made in contact with the cathode and the p-type nitride semiconductor portion being made in contact with the anode, and the n-type nitride semiconductor portion and the p-type nitride semiconductor portion have the common c-axe in the respective crystal structures thereof made in parallel with each other, with the n-type nitride semiconductor portion and the p-type nitride semiconductor portion being made in contact with each

Abstract: A light emitting device includes a pair of electrodes facing to each other and a phosphor layer which is sandwiched between the pair of electrodes and includes phosphor particles placed therein. The phosphor particles include an n-type nitride semiconductor part and a p-type nitride semiconductor part, the n-type nitride semiconductor part and the p-type nitride semiconductor part are made of respective single crystals having wurtzite-type crystal structures having c axes parallel with each other, and the phosphor particles include an insulation layer provided to overlie one end surface out of their end surfaces perpendicular to the c axes.

Abstract: A light emitting device (10) of the present invention includes: a back electrode (2) as a first electrode and a transparent electrode (3) as a second electrode facing each other, at least one of the back electrode and the transparent electrode having transparency to light; and luminescent particles (4) provided between the back electrode (2) and the transparent electrode (3) and connected electrically to the back electrode (2) and the transparent electrode (3). The back electrode (2) as the first electrode has recesses in a surface thereof facing the transparent electrode (3).

Abstract: A light emitting device includes a pair of electrodes, wherein at least one electrode is transparent or semi-transparent, and an phosphor layer provided between the pair of electrodes, wherein the phosphor layer includes a layer having nitride semiconductor particles, and wherein the nitride semiconductor particles have metal nano structures precipitated in grain boundaries between the nitride semiconductor particles.

Abstract: The light emitting device (10) of the present invention is provided with a light emitting layer (13), and a pair of electrodes (12 and 14) for injecting electric current into the light emitting layer (13). The light emitting layer (13) includes GaN-based semiconductor particles (21). The light emitting device (10) of the present invention is provided further with a light absorber for absorbing at least part of the light with a wavelength of 470 nm to 800 nm. The light absorber is, for example, a light absorption film (19) provided on at least a part of the surface of each of the GaN-based semiconductor particles (18). Further, the light absorber may be light absorption particles dispersed in the light emitting layer, or may be a light absorption layer disposed on the light exit side with respect to the light emitting layer.

Abstract: A display device is provided with a pair of a first electrode and a second electrode at least one of which is transparent or translucent and a phosphor layer formed so as to be sandwiched between the first electrode and the second electrode, and the phosphor layer has a polycrystal structure made of a first semiconductor substance in which a second semiconductor substance different from the first semiconductor substance is segregated on a grain boundary of the polycrystal structure, and the phosphor layer has a plurality of pixel regions that are selectively allowed to emit light in a predetermined range thereof and non-pixel regions that divide at least one portion of the pixel regions.

Abstract: A light emitting device (10) of the present invention includes luminescent particles (14) and a pair of electrodes (12, 16) for injecting an electric current into the luminescent particles (14). An inorganic hole transport material (15) is disposed between the electrodes (12, 16). The luminescent particles (14) are dispersed in the inorganic hole transport material (15). Conductive fine particles may be adhered to at least a part of the surfaces of the luminescent particles (14) for the purpose of achieving further high brightness and high efficiency.

Abstract: Disclosed is a light emitting device including a pair of electrodes at least one of which is transparent or semi-transparent, and a phosphor layer arranged between the pair of electrodes. The phosphor layer contains phosphor particles dispersed therein, and conductive nano particles are interposed at the interface between the phosphor layer and one of the electrodes. Also disclosed is another light emitting device including a pair of electrodes at least one of which is transparent or semi-transparent, and a phosphor layer arranged between the pair of electrodes. In this light emitting device, the phosphor layer contains phosphor particles dispersed therein, and at least one of the pair of electrodes is provided with a brush-like electrode projecting towards the phosphor layer. The brush-like electrode may be provided on the electrode on the positive electrode side, and the brush-like electrode provided on the electrode on the positive electrode side may preferably have a work function of 4.5 eV or more.

Abstract: Disclosed is a light-emitting device including a first electrode and a second electrode arranged facing each other, at least one of the electrodes being transparent or semi-transparent, and a phosphor layer provided as being sandwiched between the first electrode and the second electrode. In the phosphor layer, conductive nano particles and phosphor particles are dispersed in a matrix including a hole-transporting material. Also disclosed is another light-emitting device including a first electrode and a second electrode arranged facing each other, at least one of the electrodes being transparent or semi-transparent, and a phosphor layer sandwiched between the first electrode and the second electrode. This phosphor layer includes a phosphor particle powder containing phosphor particles, the phosphor particle having at least surface covered with a coating layer, the coating layer including a hole transport material and conductive nano particles dispersed in the hole transport material.

Abstract: This light-emitting device includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode and constituted by dispersing n-type semiconductor particles in a p-type semiconductor medium. A light-emitting device in another embodiment includes a first electrode, a second electrode disposed opposite to the first electrode and a phosphor layer which is sandwiched between the first electrode and the second electrode wherein a p-type semiconductor is segregated among the n-type semiconductor particles.

Abstract: A phosphor element is provided with a first electrode and a second electrode. The electrodes are arranged to face each other, and at least one of the electrodes is transparent or semi-transparent. The phosphor element is also provided with a phosphor layer, which is sandwiched between the first electrode and the second electrode and has phosphor particles dispersed in a medium made of a hole transport material. Conductive nano particles are held on the surface of each of the phosphor particles.

Abstract: A display is provided with: a substrate; a plurality of parallel scan wires extending over the substrate in a first direction; a plurality of parallel data wires extending parallel to a surface of the substrate in a second direction perpendicular to the first direction; at least one switching element per intersection between the scan wires and the data wires; pixel electrodes connected to the switching elements; at least one phosphor layer provided above the pixel electrodes; and common electrodes provided above the phosphor layer, and the phosphor layer has a polycrystalline structure made of a first semiconductor material and a second semiconductor material segregated between grain boundaries in the polycrystalline structure, which is different from the first semiconductor material.