Abstract: In an embodiment a detector for spectroscopy includes a housing comprises at least one aperture configured for supplying a light beam reflected or emitted from a target, the housing having at least one cross-sectional plane in which the at least one aperture comprises first and second non-contiguous intersecting surfaces, a detector arrangement with a detector surface configured for wavelength- and angle-dependent detection of light, the detector arrangement being arranged in the housing laterally spaced from the at least one aperture, a first reflector element arranged in the housing and a second reflector element opposite the detector surface, wherein the first reflector element is arranged in a beam path of the at least one aperture and is configured to direct a light beam incident through the at least one aperture onto the second reflector element, and wherein the second reflector element is configured to direct an incident light beam onto the detector surface.

Abstract: In an embodiment a vital sign sensor includes an emitter component configured to emit light, a detector component configured to detect light, a first layer of a substantially transparent material, wherein the emitter component is embedded in the first layer, and a second layer of a light scattering material arranged on the first layer, wherein the second layer includes converter particles, and wherein the first layer and the second layer are surrounded by at least one wall of a reflective material.

Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.

Abstract: A device includes a carrier and a plurality of semiconductor chips configured to generate radiation. The carrier includes a lead frame. The lead frame includes two connecting parts for external electrical contacting of the device. The semiconductor chips are arranged on the carrier. The carrier is surrounded by a casing at least in places along its entire circumference. The casing forms a side face of the device at least in places. The side face includes traces of material removal.

Abstract: An LED filament includes semiconductor chips arranged on a top side of a radiation-transmissive carrier, and at least partly covered with a radiation-transmissive first layer, the first layer and an underside of the carrier are covered with a second layer, phosphor is provided in the second layer, the phosphor is configured to shift a wavelength of the radiation of the semiconductor chip, no phosphor or phosphor including less than 50% of the concentration of the phosphor of the second layer is provided in the first layer, the carrier is formed from a further first layer and a carrier layer having cutouts, the carrier layer is arranged on the further first layer, the semiconductor chips are arranged on the further first layer in the regional of the cutouts of the carrier layer, and the first layer and the further first layer are at least partially covered with the second layer.

Abstract: A light-emitting component has a light-emitting diode chip which emits blue light with a peak wavelength of at least 450 nm and at most 465 nm. A conversion element is arranged downstream of the light-emitting diode chip in an emission direction. The conversion element contains a green fluorescent substance and a red fluorescent substance. During operation of the component the green fluorescent substance converts a part of the blue light into green light and the red fluorescent substance converts a part of the blue light into red light. The combination of the light-emitting diode chip and the conversion element thereby emits a cold white mixed light, comprising at least a part of the blue light, the green light, and the red light, wherein the cold white mixed light has a melanopic action factor of at least 0.85.

Abstract: A device with a lead frame, a moulded body and a plurality of semiconductor chips configured to generate radiation is specified, wherein the lead frame has two connection parts for external electrical contacting of the device; the moulded body is formed to the lead frame; the moulded body is transmissive to the radiation generated during operation of the device; and the semiconductor chips are arranged on a front-side of the moulded body and each of the semiconductor chips overlap with the device with the moulded body in plan view of the device. Furthermore, a method for producing devices is specified.

Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometers.

Abstract: An LED filament includes semiconductor chips arranged on a top side of a radiation-transmissive carrier, and at least partly covered with a radiation-transmissive first layer, the first layer and an underside of the carrier are covered with a second layer, phosphor is provided in the second layer, the phosphor is configured to shift a wavelength of the radiation of the semiconductor chip, no phosphor or phosphor including less than 50% of the concentration of the phosphor of the second layer is provided in the first layer, the carrier is formed from a further first layer and a carrier layer having cutouts, the carrier layer is arranged on the further first layer, the semiconductor chips are arranged on the further first layer in the regional of the cutouts of the carrier layer, and the first layer and the further first layer are at least partially covered with the second layer.

Abstract: A light module for providing polychromatic light is provided. The light module includes a wavelength conversion element, a first light source for emitting a first light beam in a first wavelength range, and at least one second light source for emitting a second light beam. The element is configured to convert primary light radiated in by the first light beam into a first conversion light and to convert primary light radiated in by the at least one second light beam into a second conversion light. At least the first conversion light and the second conversion light together form a third light beam. The module further includes a control unit configured for predefining a first luminous intensity for the first light source and/or a second luminous intensity for the at least one second light source depending on a measurement of the light color of the third light beam.

Abstract: A connection carrier, an optoelectronic component and a method for producing a connection carrier or an optoelectronic component are disclosed. In an embodiment a connection carrier includes a substrate, an electrically insulating connecting element, an electrically conductive contact element and an insulation element.

Abstract: A light-emitting component has a light-emitting diode chip which emits blue light with a peak wavelength of at least 450 nm and at most 465 nm. A conversion element is arranged downstream of the light-emitting diode chip in an emission direction. The conversion element contains a green fluorescent substance and a red fluorescent substance. During operation of the component the green fluorescent substance converts a part of the blue light into green light and the red fluorescent substance converts a part of the blue light into red light. The combination of the light-emitting diode chip and the conversion element thereby emits a cold white mixed light, comprising at least a part of the blue light, the green light, and the red light, wherein the cold white mixed light has a melanopic action factor of at least 0.85.

Abstract: A light module for providing polychromatic light is provided. The light module includes a wavelength conversion element, a first light source for emitting a first light beam in a first wavelength range, and at least one second light source for emitting a second light beam. The element is configured to convert primary light radiated in by the first light beam into a first conversion light and to convert primary light radiated in by the at least one second light beam into a second conversion light. At least the first conversion light and the second conversion light together form a third light beam. The module further includes a control unit configured for predefining a first luminous intensity for the first light source and/or a second luminous intensity for the at least one second light source depending on a measurement of the light color of the third light beam.

Abstract: A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a CIE standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

Abstract: Various embodiments disclosed herein include a light-based communication system. The system includes a plurality of luminaires, in which each of the plurality of luminaires is configured to transmit light-based communication (LCom) signals, and a server communicatively coupled to the plurality of luminaires. The server is configured to assign an identifier to each of the plurality of luminaires, transmit the assigned identifier to each of the plurality of luminaires, in which each of the plurality of luminaires transmits the assigned identifier via LCom signals, rotate, in response to receiving a trigger signal, the assigned identifier for each of the plurality of luminaires, and transmit the rotated identifier to each of the plurality of luminaires, in which each of the plurality of luminaires transmits the rotated identifier via LCom signals.

Abstract: A conversion element for the wavelength conversion of electromagnetic radiation from a first wavelength range to electromagnetic radiation from a second wavelength range, which includes longer wavelengths than the first wavelength range, the conversion element includes: a matrix material, the optical refractive index of which is temperature-dependent, and at least two different types of luminophore particles wherein a multiplicity of luminophore particles of each of the types are distributed in the matrix material, luminophore particles of different types differ from one another in terms of average particle size and/or material, the conversion element, upon excitation by electromagnetic radiation from the first wavelength range emits mixed radiation including electromagnetic radiation from the first and the second wavelength range, and the correlated color temperature and/or the color locus of the mixed radiation remain(s) substantially the same when the matrix material is at a temperature of between 25° C.

Abstract: Conversion LED emits primary radiation (peak wavelength 435 nm to 455 nm) and has a luminescent substance-containing layer positioned to intercept the primary radiation and convert it into secondary radiation. First and second luminescent substances are used. The first luminescent substance is a A3B5O12:Ce garnet type emitting yellow green having cation A=75 to 100 mol. % Lu, remainder Y and a Ce content of 1.5 to 2.9 mol. %, where B=10 to 40 mol. % Ga, remainder Al. The second luminescent substance is of the MAlSiN3:Eu calsine type which emits orange red, where M is Ca alone or at least 80% Ca and the remainder of M may be Sr, Ba, Mg, Li or Cu, in each case alone or in combination, wherein some of the Al up to 20%, can be replaced by B, and wherein N can be partially replaced by O, F, Cl, alone or in combination.

Abstract: A conversion element for the wavelength conversion of electromagnetic radiation from a first wavelength range to electromagnetic radiation from a second wavelength range, which includes longer wavelengths than the first wavelength range, the conversion element includes: a matrix material, the optical refractive index of which is temperature-dependent, and at least two different types of luminophore particles wherein a multiplicity of luminophore particles of each of the types are distributed in the matrix material, luminophore particles of different types differ from one another in terms of average particle size and/or material, the conversion element, upon excitation by electromagnetic radiation from the first wavelength range emits mixed radiation including electromagnetic radiation from the first and the second wavelength range, and the correlated color temperature and/or the color locus of the mixed radiation remain(s) substantially the same when the matrix material is at a temperature of between 25° C.

Abstract: A semiconductor illuminating device is disclosed. The device includes an LED configured for emitting blue primary radiation and an LED phosphor arranged and configured such that it emits secondary light that forms at least one component of the illumination light, wherein the LED phosphor comprises a red phosphor for emitting red light as a component of the secondary light and a green phosphor for emitting green light as a component of the secondary light, wherein the green light has a color point located above a first straight line having a slope m1 and a y-intercept n1 in a CIE standard chromaticity diagram, with the slope m1=1.189 and the y-intercept n1=0.226, and wherein the components of the illumination light are at such a ratio to one another that the illumination light has a color temperature of at most 5500 K.

Abstract: An optoelectronic semiconductor chip having a semiconductor body (1) that is suitable for emitting electromagnetic radiation in a first wavelength range from a radiation exit face (3) is specified. Furthermore, the semiconductor chip comprises a ceramic or monocrystalline conversion platelet (6) that is suitable for converting electromagnetic radiation in the first wavelength range into electromagnetic radiation in a second wavelength range, which is different from the first wavelength range, and a wavelength-converting joining layer (7) that connects the conversion platelet (6) to the radiation exit face (3), wherein the wavelength-converting joining layer (7) has luminescent material particles (4) that are suitable for converting radiation in the first wavelength range into radiation in a third wavelength range, which is different from the first wavelength range and the second wavelength range. The wavelength-converting joining layer (7) furthermore has a thickness of no more than 30 micrometres.