Abstract: A semiconductor wafer has a front side 1, a back side 2, a top layer 3, a bottom layer 4, an upper inner layer 5 lying below the top layer 3, a lower inner layer 6 lying above the bottom layer 4, a central region 7 between the layers 5 and 6 and an uneven distribution of crystal lattice defects. The concentration of the defects exhibits a first maximum (max1) in the central region 7 and a second maximum (max2) in the bottom layer 4.

Abstract: A semiconductor wafer has a front side 1, a back side 2, a top layer 3, a bottom layer 4, an upper inner layer 5 lying below the top layer 3, a lower inner layer 6 lying above the bottom layer 4, a central region 7 between the layers 5 and 6 an uneven distribution of crystal lattice defects. The concentration of the defects exhibits a first maximum (max1) in the central region 7 and a second maximum (max2) in the bottom layer 4.

Abstract: A process for producing silicon wafers with low defect density is one wherein a) a silicon single crystal having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 is produced by molten material being solidified to form a single crystal and is then cooled, and the holding time of the single crystal during cooling in the temperature range of from 850.degree. C. to 1100.degree. C. is less than 80 minutes; b) the single crystal is processed to form silicon wafers; and c) the silicon wafers are annealed at a temperature of at least 1000.degree. C. for at least one hour. Also, it is possible to prepare a silicon single crystal based upon having an oxygen doping concentration of at least 4*10.sup.17 /cm.sup.3 and a nitrogen doping concentration of at least 1*10.sup.14 /cm.sup.3 for (a) above.

Abstract: Semiconductor slices, in particular having the surface polished on both ss, can be provided with a surface which effects the formation of gettering centers. These centers include stacking faults and/or dislocation networks in subsequent thermal treatment steps by a pressure loading being exerted on them with the aid of an elastic pressure transmission medium which causes local pressure inhomogeneities. A material erosion, for example in the form of scratches, is not necessary in this process. Advantageously, the treatment is carried out during a template polishing step in which a suitable pressure transmission medium is in contact with the rear side of the slice. The process makes available semiconductor slices with gettering action on one side which have a high surface quality on both sides.

Abstract: The invention relates to an improved method for removing point defects and oint defect clusters from semiconductor discs, which defects impair the quality of electronic components or structural elements made from such discs. According to the invention, prior to polishing, the semiconductor discs are immersed in a bath containing grains moving in a streaming carrier medium of the bath. One side of the discs are then polished and thereafter the discs are subjected to oxidation processes whereby stacking faults are induced in the rear side of the discs. These stacking faults have an excellent gettering effect on the point defects.