Patents by Inventor Remi COQUAND
Remi COQUAND has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11575003Abstract: Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.Type: GrantFiled: April 26, 2021Date of Patent: February 7, 2023Assignees: International Business Machines CorporationInventors: Nicolas Loubet, Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh
-
Patent number: 11515392Abstract: An electronic device including at least first and second superimposed transistors comprises at least a substrate; a first transistor including a portion of a first nanowire forming a first channel, and first source and drain regions in contact with ends of the first nanowire portion; and a second transistor including a portion of a second nanowire forming a second channel and having a greater length than that of the first channel, and second source and drain regions in contact with ends of the second nanowire portion such that the second transistor is arranged between the substrate and the first transistor. A dielectric encapsulation layer covers at least the second source and drain regions and such that the first source and drain regions are arranged at least partly on the dielectric encapsulation layer, and forms vertical insulating portions extending between the first and second source and drain regions.Type: GrantFiled: June 29, 2021Date of Patent: November 29, 2022Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, International Business Machines CorporationInventors: Shay Reboh, Remi Coquand, Nicolas Loubet, Tenko Yamashita, Jingyun Zhang
-
Patent number: 11450755Abstract: An electronic device is provided, including a transistor and a substrate surmounted by first through third elements, the second element being arranged between the first and the third elements and including a nano-object, a transistor channel area being formed by part of the nano-object, a first end of the nano-object being connected to the first element by a first electrode including a first part forming a first continuity of matter and a second part formed on the first part, a second end of the nano-object being connected to the third element by a second electrode including a first part forming a second continuity of matter and a second part formed on the first part, such that a lattice parameter of the second part is suited to a lattice parameter of the first part to induce a stress in the nano-object along a reference axis.Type: GrantFiled: June 17, 2020Date of Patent: September 20, 2022Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Shay Reboh, Emmanuel Augendre, Remi Coquand, Nicolas Loubet
-
Patent number: 11177371Abstract: A method is provided for fabricating a double gate structure for transistors with superposed bars, including: providing, on a support, a stack including an alternation of one or several first bars based on a first semiconducting material, and one or several second bars based on a second semiconducting material; removing lateral portions of the second bars; forming insulating plugs in contact with lateral regions of the second bars; removing the first bars; and forming a gate electrode facing an upper face and a lower face of the second bars, the insulating plugs being arranged in contact with the lateral regions of the second bars when the gate electrode is being formed.Type: GrantFiled: August 8, 2019Date of Patent: November 16, 2021Assignee: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Remi Coquand, Shay Reboh
-
Publication number: 20210328014Abstract: An electronic device including at least first and second superimposed transistors comprises at least a substrate; a first transistor including a portion of a first nanowire forming a first channel, and first source and drain regions in contact with ends of the first nanowire portion; and a second transistor including a portion of a second nanowire forming a second channel and having a greater length than that of the first channel, and second source and drain regions in contact with ends of the second nanowire portion such that the second transistor is arranged between the substrate and the first transistor. A dielectric encapsulation layer covers at least the second source and drain regions and such that the first source and drain regions are arranged at least partly on the dielectric encapsulation layer, and forms vertical insulating portions extending between the first and second source and drain regions.Type: ApplicationFiled: June 29, 2021Publication date: October 21, 2021Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, International Business Machines CorporationInventors: Shay REBOH, Remi COQUAND, Nicolas LOUBET, Tenko YAMASHITA, Jingyun ZHANG
-
Publication number: 20210257450Abstract: Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.Type: ApplicationFiled: April 26, 2021Publication date: August 19, 2021Inventors: Nicolas Loubet, Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh
-
Patent number: 11088247Abstract: A method of fabrication of a semiconductor device including implementation of fabrication of at least one stack made on a substrate, including at least one first portion of a first semiconductor and at least one second portion of a second semiconductor which is different from the first semiconductor, so the thickness of at least the first portion is substantially equal to the thickness of at least one nanostructure, and wherein the first or second semiconductor is capable of being selectively etched relative to the second or first semiconductor, respectively, fabrication, on a part of the stack, of external spacers and at least one dummy gate, etching of the stack such that the remaining parts of the first and second portions are arranged beneath the dummy gate and beneath the external spacers and form a stack of nanowires, after the etching of the stack, thermal treatment of the stack of nanowires.Type: GrantFiled: March 9, 2020Date of Patent: August 10, 2021Assignees: Commissariat A L'Energie Atomique et aux Energies Alternatives, International Business Machines CorporationInventors: Shay Reboh, Kangguo Cheng, Remi Coquand, Nicolas Loubet
-
Patent number: 11081547Abstract: A method for making first and second superimposed transistors, including: making, on a substrate, a stack of several semiconducting nanowires; etching a first nanowire so that a remaining portion of the first nanowire forms a channel of the first transistor; etching a second nanowire arranged between the substrate and the first nanowire, so that a remaining portion of the second nanowire forms a channel of the second transistor and has a greater length than that of the remaining portion of the first nanowire; making second source and drain regions in contact with ends of the remaining portion of the second nanowire; depositing a first dielectric encapsulation layer covering the second source and drain regions and forming vertical insulating portions; making first source and drain regions in contact with ends of the remaining portion of the first nanowire and insulated from the second source and drain regions by the vertical insulating portions.Type: GrantFiled: September 24, 2019Date of Patent: August 3, 2021Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, International Business Machines CorporationInventors: Shay Reboh, Remi Coquand, Nicolas Loubet, Tenko Yamashita, Jingyun Zhang
-
Patent number: 11049933Abstract: Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.Type: GrantFiled: July 18, 2019Date of Patent: June 29, 2021Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Nicolas Loubet, Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh
-
Publication number: 20210020743Abstract: Provided are embodiments for a semiconductor device. The semiconductor device includes a nanosheet stack comprising one or more layers, wherein the one or more layers are induced with strain from a modified sacrificial gate. The semiconductor device also includes one or more merged S/D regions formed on exposed portions of the nanosheet stack, wherein the one or more merged S/D regions fix the strain of the one or more layers, and a conductive gate formed over the nanosheet stack, wherein the conductive gate replaces a modified sacrificial gate without impacting the strain induced in the one or more layers. Also provided are embodiments for a method for creating stress in the channel of a nanosheet transistor.Type: ApplicationFiled: July 18, 2019Publication date: January 21, 2021Inventors: Nicolas Loubet, Tenko Yamashita, Guillaume Audoit, Nicolas Bernier, Remi Coquand, Shay Reboh
-
Patent number: 10896956Abstract: FET transistor (100) comprising: a semiconductor portion (104) of which a first part (106) forms a channel; a gate (108) at least partly surrounding the first part; internal dielectric spacers (112) arranged around doped second parts (114) of the semiconductor portion between which the first part is arranged and which form extension regions; electrically conductive portions (120) in contact with doped surfaces of extremities (118) of the semiconductor portion and with doped surfaces of third parts (116) of the semiconductor portion, forming part of the source and drain regions, at least partly surrounding the third parts, with each of the second parts being arranged between the first part and one of the third parts.Type: GrantFiled: December 22, 2017Date of Patent: January 19, 2021Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Remi Coquand, Shay Reboh
-
Patent number: 10818775Abstract: The method for fabricating a field-effect transistor comprises a step of producing a sacrificial gate and first and second spacers covering first, second and third parts of successive first to fifth semiconductor nanowires of a stack. The fabricating method comprises a step of forming a channel area of the transistor, which channel area is compressively stressed and distinct from the second part of the third nanowire. The channel area is connected to a source electrode of the transistor by the first part of the second nanowire, and to a drain electrode of the transistor by the third part of the second nanowire.Type: GrantFiled: November 14, 2018Date of Patent: October 27, 2020Assignees: Commissariat a l'energie atomique et aux energies alternatives, International Business Machines CorporationInventors: Shay Reboh, Emmanuel Augendre, Remi Coquand, Nicolas Loubet
-
Publication number: 20200321452Abstract: An electronic device is provided, including a transistor, a substrate surmounted by first, second, and third elements, the second arranged between the first and the third and including a nano-object, a channel area of the transistor formed by part of the nano-object, the nano-object including first and second opposite ends along a reference axis passing through the ends, the first end connected to the first element via a first electrode including a first part and a second part formed on the first part, the second end connected to the third element via a second electrode including a first part and a second part formed on the first part, the first parts formed of a first material and the second parts formed of a second material, a lattice parameter of the second material suited to that of the first material to induce a stress in the nano-object along the reference axis.Type: ApplicationFiled: June 17, 2020Publication date: October 8, 2020Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Shay REBOH, Emmanuel AUGENDRE, Remi COQUAND, Nicolas LOUBET
-
Patent number: 10727320Abstract: A method of manufacturing a field effect transistor is provided, including supplying a substrate surmounted by first, second, and third structures, the second structure arranged between the first and the third structures and including at least one first nano-object located away from the substrate, a part of the first nano-object being configured to form a channel area of the transistor; forming electrodes of the transistor including epitaxial growth of a first material to obtain a first continuity of matter made of the first material between the second structure and the first structure, and to obtain a second continuity of matter made of the first material between the second structure and the third structure; and epitaxial growth of a second material, starting from the first material, the second material having a lattice parameter different from a lattice parameter of the first material of the first and the second continuities.Type: GrantFiled: December 29, 2017Date of Patent: July 28, 2020Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Shay Reboh, Emmanuel Augendre, Remi Coquand, Nicolas Loubet
-
Patent number: 10714392Abstract: Techniques for optimizing junctions of a gate-all-around nanosheet device are provided. In one aspect, a method of forming a nanosheet device includes: forming an alternating series of first/second nanosheets including a first/second material as a stack on a wafer; forming a dummy gate(s) on the stack; patterning the stack into a fin stack(s) beneath the dummy gate(s); etching the fin stack(s) to selectively pull back the second nanosheets in the fin stack(s) forming pockets in the fin stack(s); filling the pockets with a strain-inducing material; burying the dummy gate(s) in a dielectric material; selectively removing the dummy gate(s) forming a gate trench(es) in the dielectric material; selectively removing either the first nanosheets or the second nanosheets from the fin stack(s); and forming a replacement gate(s) in the gate trench(es). A nanosheet device is also provided.Type: GrantFiled: July 18, 2018Date of Patent: July 14, 2020Assignee: International Business Machines CorporationInventors: Nicolas Loubet, Emmanuel Augendre, Remi Coquand, Shay Reboh
-
Publication number: 20200212179Abstract: A method of fabrication of a semiconductor device including implementation of fabrication of at least one stack made on a substrate, including at least one first portion of a first semiconductor and at least one second portion of a second semiconductor which is different from the first semiconductor, so the thickness of at least the first portion is substantially equal to the thickness of at least one nanostructure, and wherein the first or second semiconductor is capable of being selectively etched relative to the second or first semiconductor, respectively, fabrication, on a part of the stack, of external spacers and at least one dummy gate, etching of the stack such that the remaining parts of the first and second portions are arranged beneath the dummy gate and beneath the external spacers and form a stack of nanowires, after the etching of the stack, thermal treatment of the stack of nanowires.Type: ApplicationFiled: March 9, 2020Publication date: July 2, 2020Applicants: Commissariat A L'Energle A.tomique et aux Energies Alternatives, International Business Machines CorporationInventors: Shay REBOH, Kangguo CHENG, Remi COQUAND, Nicolas LOUBET
-
Publication number: 20200111872Abstract: Production of a structure for a transistor, with semiconductor bars disposed one above the other and able to form at least one transistor channel region, the method comprising growth of a semiconductor material around semiconductor bars disposed one above the other, while, during this growth, preserving a dummy bar situated above the semiconductor bars in order to limit the thickness of semiconductor material formed and/or to make this thickness uniform from one bar to another.Type: ApplicationFiled: October 2, 2019Publication date: April 9, 2020Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Shay REBOH, Remi Coquand
-
Publication number: 20200098859Abstract: A method for making first and second superimposed transistors, including: making, on a substrate, a stack of several semiconducting nanowires; etching a first nanowire so that a remaining portion of the first nanowire forms a channel of the first transistor; etching a second nanowire arranged between the substrate and the first nanowire, so that a remaining portion of the second nanowire forms a channel of the second transistor and has a greater length than that of the remaining portion of the first nanowire; making second source and drain regions in contact with ends of the remaining portion of the second nanowire; depositing a first dielectric encapsulation layer covering the second source and drain regions and forming vertical insulating portions; making first source and drain regions in contact with ends of the remaining portion of the first nanowire and insulated from the second source and drain regions by the vertical insulating portions.Type: ApplicationFiled: September 24, 2019Publication date: March 26, 2020Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, International Business Machines CorporationInventors: Shay Reboh, Remi Coquand, Nicolas Loubet, Tenko Yamashita, Jingyun Zhang
-
Publication number: 20200058768Abstract: A method of fabricating a double gate structure for transistors with superposed bars is provided, including: providing, on a support, a stack including an alternation of one or several first bars made of a first semiconducting material, and one or several second bars based on a second semiconducting material; removing lateral portions of the second bars; forming insulating plugs in contact with lateral regions of the second bars; removing the first bars; and forming a gate electrode facing an upper face and a lower face of the second bars, the insulating plugs being arranged in contact with the lateral regions of the second bars when the gate electrode is being formed.Type: ApplicationFiled: August 8, 2019Publication date: February 20, 2020Applicant: Commissariat A L'Energie Atomique et aux Energies AlternativesInventors: Remi COQUAND, Shay REBOH
-
Patent number: 10553723Abstract: A method is provided of fabricating a microelectronic device including a semiconductor structure provided with semiconductor bars positioned above one another, the method including the following steps: creating, on a substrate, a stacked structure including an alternation of first bars containing a first material and having a first critical dimension and second bars containing a second material, the second material being a semiconductor, the second bars having a second critical dimension greater than the first critical dimension, then, surface doping protruding lateral portions of the second bars before forming a source and drain block on the portions.Type: GrantFiled: August 3, 2018Date of Patent: February 4, 2020Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Remi Coquand, Nicolas Loubet, Shay Reboh, Robin Chao