Patents by Inventor Renren XU

Renren XU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Mo doped AlCrSiN/Mo self-lubricating films and preparation method thereof
    Patent number: 12077842
    Abstract: Mo doped AlCrSiN/Mo self-lubricating films and a preparation method thereof are provided. The AlCrSiN/Mo self-lubricating films are prepared by doping Mo element into the AlCrSiN films, and the Mo content in the resulted films is in the range of 0.3-6.3 at. %. The films are prepared on the substrates by high power impulse magnetron sputtering (HiPIMS) and pulsed DC magnetron sputtering hybrid coating technology. The prepared AlCrSiN/Mo self-lubricating films possess high hardness, good toughness, excellent antifriction characteristics and good chemical stability.
    Type: Grant
    Filed: March 22, 2022
    Date of Patent: September 3, 2024
    Assignee: TIANJIN UNIVERSITY OF TECHNOLOGY AND EDUCATION (TEACHER DEVELOPMENT CENTER OF CHINA VOCATIONAL TRAINING AND GUIDANCE)
    Inventors: Tiegang Wang, Deqiang Meng, Yanmei Liu, Bing Yan, Renren Xu, Zhaoxing Yin
  • Mo Doped AlCrSiN/Mo Self-lubricating Films and Preparation Method Thereof
    Publication number: 20220213588
    Abstract: Mo doped AlCrSiN/Mo self-lubricating films and a preparation method thereof are provided. The AlCrSiN/Mo self-lubricating films are prepared by doping Mo element into the AlCrSiN films, and the Mo content in the resulted films is in the range of 0.3-6.3 at. %. The films are prepared on the substrates by high power impulse magnetron sputtering (HiPIMS) and pulsed DC magnetron sputtering hybrid coating technology. The prepared AlCrSiN/Mo self-lubricating films possess high hardness, good toughness, excellent antifriction characteristics and good chemical stability.
    Type: Application
    Filed: March 22, 2022
    Publication date: July 7, 2022
    Inventors: Tiegang WANG, Deqiang MENG, Yanmei LIU, Bing YAN, Renren XU, Zhaoxing YIN
  • Semiconductor device and method for manufacturing the same
    Patent number: 11257933
    Abstract: A method for manufacturing a semiconductor device is provided. A first substrate and at least one second substrate are provided. A single crystal lamination structure is formed on the first substrate. The single crystal lamination structure includes at least one hetero-material layer and at least one channel material layer that are alternately laminated, each of the at least one hetero-material layer is bonded to an adjacent one of the at least one channel material layer at a side away from the first substrate, and each of the at least one channel material layer is formed from one of the at least one second substrate. At least one layer of nanowire or nanosheet is formed from the single crystal lamination structure. A gate dielectric layer and a gate which surround each of the at least one layer of nanowire or nanosheet is formed. A semiconductor device is also provided.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: February 22, 2022
    Assignee: Institute of Microelectronics, Chinese Academy
    Inventors: Huaxiang Yin, Qingzhu Zhang, Renren Xu
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20210193822
    Abstract: A method for manufacturing a semiconductor device is provided. A first substrate and at least one second substrate are provided. A single crystal lamination structure is fonned on the first substrate. The single crystal lamination structure includes at least one hetero-material layer and at least one channel material layer that are alternately laminated, each of the at least one hetero-material layer is bonded to an adjacent one of the at least one channel material layer at a side away from the first substrate, and each of the at least one channel material layer is formed from one of the at least one second substrate. At least one layer of nanowire or nanosheet is formed from the single crystal lamination structure. A gate dielectric layer and a gate which surround each of the at least one layer of nanowire or nanosheet is formed. A semiconductor device is also provided.
    Type: Application
    Filed: September 23, 2020
    Publication date: June 24, 2021
    Inventors: Huaxiang YIN, Qingzhu ZHANG, Renren XU