Patents by Inventor Richard A. Stall

Richard A. Stall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4772356
    Abstract: Substrates such as semiconductor wafers are treated with a gas by advancing the substrate along a path, preferably a circular path through the gas while maintaining a face of the substrate transverse, preferably oblique, to the path so that the gas contacts be exposed from the face of the substrate. Preferably, a plurality of substrates are treated simultaneously, and the substrates serve as vanes to impel the gas into rotational motion, thereby pumping the gas through the process chamber. Preferably, the substrates are carried on susceptors having generally planar faces, the susceptors also serving as vanes impelling the gas into rotational motion. The gas may be a depositing gas for forming epitaxial layers on the faces of the substrates, or an etching gas.
    Type: Grant
    Filed: July 3, 1986
    Date of Patent: September 20, 1988
    Assignee: Emcore, Inc.
    Inventors: Norman E. Schumaker, Richard A. Stall, Craig R. Nelson, Wilfried R. Wagner
  • Patent number: 4592927
    Abstract: Oxide (R.sub.m O.sub.n) films are grown by evaporation from separate sources of element (R) and an oxide (M.sub.r O.sub.s) which serves as the oxygen source. The oxide (M.sub.r O.sub.s) should sublimate congruently; i.e., without decomposing into oxygen and its constituent element (M). On the growth surface this oxide (M.sub.r O.sub.s) can react with the element (R) to form another oxide (R.sub.m O.sub.n) that is thermodynamically more stable:mR+M.sub.r O.sub.s .fwdarw.R.sub.m O.sub.n +M.sub.r O.sub.s-nUsing this technique, films of Al.sub.2 O.sub.3, MgO, SiO.sub.2, and MgAl.sub.2 O.sub.4 have been grown using As.sub.2 O.sub.3 or Sb.sub.2 O.sub.3 as the oxygen source.
    Type: Grant
    Filed: March 2, 1984
    Date of Patent: June 3, 1986
    Assignee: AT&T Bell Laboratories
    Inventor: Richard A. Stall
  • Patent number: 4398963
    Abstract: Ultra low resistance heterojunction ohmic contacts to semiconductors such gallium arsenide (GaAs) is described wherein a single crystal layer of germanium degenerately doped with arsenic is deposited on gallium arsenide using molecular-beam epitaxy (MBE). A metallic film is then deposited over the single crystal layer of heavily doped germanium so as to obtain a non-alloyed heterojunction ohmic contact having a very low specific resistance.
    Type: Grant
    Filed: November 19, 1980
    Date of Patent: August 16, 1983
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Richard A. Stall, Colin E. C. Wood, Lester F. Eastman