Abstract: Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

Abstract: A solid state light-emitting device comprising: a first electrode coupled to a first charge injecting layer; a second electrode coupled to a second charge injecting layer; an emissive layer comprising a perovskite material, wherein the emissive layer is provided between the first and second charge injecting layers; and wherein the bandgaps of the first and second charge injecting layers are larger than the bandgap of the emissive perovskite layer.

Abstract: A photovoltaic device and method utilizing a light harvesting device and a photovoltaic cell; wherein the light harvesting device includes an organic semiconductor photoactive layer capable of multiple exciton generation with a luminescent material dispersed therein; wherein the bandgap of the luminescent material is selected such that the triplet excitons, formed as a result from the multiple exciton generation in the organic semiconductor, can be transferred from the organic semiconductor into the luminescent material non-radiatively via Dexter Energy Transfer; a photovoltaic cell disposed in an emissive light path of the luminescent material and having a first photoactive layer, wherein the bandgap of the luminescent material matches or is higher than the bandgap of the first photoactive layer.

Abstract: We describe a luminescent device (120, 130) comprising a substrate (102) and a film comprising perovskite crystals (122, 132) deposited on the substrate, wherein the film comprising perovskite crystals is encapsulated with a layer (124, 134)) or within a matrix (124, 134) of an insulating oxide or an insulating nitride.

Abstract: Broadly speaking, embodiments of the present invention provide a solid state light-emitting device and a method of manufacturing the solid state light-emitting device. The method comprises preparing a thin layer of semiconducting perovskite nanoparticles embedded in a matrix or blend of a material that has a wider band gap than the semiconducting perovskite nanoparticles. In embodiments, the method comprises blending a solution of a semiconducting perovskite material or a precursor therefor with a solution of a material that has a wider band gap than the semiconducting perovskite material or a precursor therefor followed by removal of the solvent from the mixture thus formed, to give the semiconducting perovskite nanoparticles embedded in a matrix or blend of the material that has a wider band gap than the semiconducting perovskite nanoparticles.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: We describe a luminescent device (120, 130) comprising a substrate (102) and a film comprising perovskite crystals (122, 132) deposited on the substrate, wherein the film comprising perovskite crystals is encapsulated with a layer (124, 134)) or within a matrix (124, 134) of an insulating oxide or an insulating nitride.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: An optoelectronic device comprising a charge transfer layer including a first semiconductive polymer comprising one or more zwitterions.

Abstract: A cross-linking moiety having a general formula I: ArF-W, wherein ArF comprises a fluorinated phenyl azide group having at least one non-fluorine substituent that is bulkier than fluorine at a meta position relative to the azide group, and W comprises an electron-withdrawing group.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: A photovoltaic device comprising a light harvesting device and a photovoltaic cell; wherein the light harvesting device comprises an organic semiconductor photoactive layer capable of multiple exciton generation with a luminescent material dispersed therein; wherein the bandgap of the luminescent material is selected such that the triplet excitons, formed as a result from the multiple exciton generation in the organic semiconductor, can be transferred from the organic semiconductor into the luminescent material non-radiatively via Dexter Energy Transfer; a photovoltaic cell disposed in an emissive light path of the luminescent material and having a first photoactive layer, wherein the bandgap of the luminescent material matches or is higher than the bandgap of the first photoactive layer.

Abstract: A solid state light-emitting device comprising: a first electrode coupled to a first charge injecting layer; a second electrode coupled to a second charge injecting layer; an emissive layer comprising a perovskite material, wherein the emissive layer is provided between the first and second charge injecting layers; and wherein the bandgaps of the first and second charge injecting layers are larger than the bandgap of the emissive perovskite layer.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of: the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode.

Abstract: A photovoltaic device comprising: a first electrode, a second electrode, and disposed between the first electrode and the second electrode an organic semiconductor layer capable of multiple exciton generation and an inorganic semiconductor layer, wherein an interlayer comprising an inorganic semiconductor such as a semiconductor nanocrystal is disposed between the organic and inorganic semiconductor layers.

Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

Abstract: A method for forming a conjugated polymer which is doped by a dopant includes the steps of (a) adding a doping agent comprising a dopant moiety to a solution containing the conjugated polymer or a precursor thereof and, optionally, a second polymer, the dopant moiety being capable of bonding to the conjugated polymer, precursor thereof or the second polymer; (b) allowing the dopant moiety to bond to the conjugated polymer, precursor thereof or the second polymer to perform doping of the conjugated polymer, wherein the amount of doping agent added in step (a) is less than the amount required to form a fully doped conjugated polymer.

Abstract: A light-emissive device comprising a light-emissive material provided between first and second electrodes such that charge carriers can move between the first and second electrodes and the light-emissive material, wherein the device includes a layer of a polymer blend provided between the first and second electrodes, phase separation of the polymers in the polymer blend having been induced in at least a portion of the polymer blend so as to control the propagation of light emitted by the light-emissive material in a predetermined direction.

Abstract: An optoelectronic device comprising a charge transfer layer including a first semiconductive polymer comprising one or more zwitterions.