Patents by Inventor Richard J. Matyi

Richard J. Matyi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5959308
    Abstract: Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs (110) on silicon (102) is accomplished by formation of a defect annihilating grid (104) on the silicon (102) prior to the epitaxy of the GaAs (110).
    Type: Grant
    Filed: January 29, 1993
    Date of Patent: September 28, 1999
    Assignee: Texas Instruments Incorporated
    Inventors: Hisashi Shichijo, Richard J. Matyi
  • Patent number: 5238869
    Abstract: Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs (110) on silicon (102) is accomplished by formation of a defect annihilating grid (104) on the silicon (102) prior to the epitaxy of the GaAs (110).
    Type: Grant
    Filed: July 27, 1992
    Date of Patent: August 24, 1993
    Assignee: Texas Instruments Incorporated
    Inventors: Hisashi Shichijo, Richard J. Matyi
  • Patent number: 4914053
    Abstract: Preferred embodiments include growth of GaAs on insulator-masked silicon; the GaAs is single crystal over the silicon but polycrystalline over the insulator. A post=growth anneal extends the single crystal region over the insulator for distances of 2-4 .mu.m.
    Type: Grant
    Filed: September 8, 1987
    Date of Patent: April 3, 1990
    Assignee: Texas Instruments Incorporated
    Inventors: Richard J. Matyi, Hisashi Shichijo