Patents by Inventor Richard L. Bersin
Richard L. Bersin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5908319Abstract: In a microwave downstream process, a microwave plasma is formed from a gas that has a small quantity of fluorine to enhance ashing without substantial oxide loss. This process can be performed before or after other microwave downstream processes or reactive ion etching processes.Type: GrantFiled: April 24, 1996Date of Patent: June 1, 1999Assignee: ULvac Technologies, Inc.Inventors: Han Xu, Richard L. Bersin
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Patent number: 5882489Abstract: A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents.Type: GrantFiled: April 26, 1996Date of Patent: March 16, 1999Assignee: Ulvac Technologies, Inc.Inventors: Richard L. Bersin, Han Xu
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Patent number: 5795831Abstract: A method for removing a resist layer includes an RIE process and a downstream microwave process, each performed such that the temperature of the wafer is no greater than about 60.degree. C. By performing these processes cold, the resist need not be pre-heated to drive off solvents. The RIE process and the microwave process can be performed sequentially or simultaneously.Type: GrantFiled: October 16, 1996Date of Patent: August 18, 1998Assignee: Ulvac Technologies, Inc.Inventors: Izumi Nakayama, Yukio Masuda, Richard L. Bersin, Han Xu, Quain Geng
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Patent number: 5228052Abstract: A plasma ashing apparatus has a vacuum treatment chamber for receiving therein a substrate coated with a resist film, a reactive gas introduction pipe equipped with a plasma applicator, a vacuum exhaust pipe, a heating means for heating the substrate, and two pieces of electrodes disposed in parallel to each other. One of the electrodes is a substrate electrode and the other thereof is a circular counter electrode. These two electrodes are commonly connected to an RF power source to thereby constitute a cathode electrode. Multiple concentric perforations are formed in the counter electrode except for a rib portion. A central perforation is formed in the center of the counter electrode. The concentric perforations are formed at every distance, from the center, equivalent to a diameter of the central perforation, while leaving circular electrode surfaces corresponding in width to a radius of of the perforation.Type: GrantFiled: September 11, 1991Date of Patent: July 13, 1993Assignee: Nihon Shinku Gijutsu Kabushiki KaishaInventors: Masashi Kikuchi, Richard L. Bersin, Masaki Uematsu
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Patent number: 5099100Abstract: Plasma etching device and process in which a chamber is divided into two regions by a perforated screen. Objects to be etched are placed in one region, and a plasma is formed in the other region. Etching occurs in the first region, and structure is included for heating the etched objects in the first region to facilitate the removal of photoresist used to define the areas to be etched.Type: GrantFiled: September 29, 1989Date of Patent: March 24, 1992Assignee: Branson International Plasma CorporationInventors: Richard L. Bersin, Michael J. Singleton
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Patent number: 4699689Abstract: A method is provided for removing photoresist from a substrate, wherein the method comprises producing a gas plasma from a gas mixture comprising oxygen, CF.sub.4, nitrogen, and hydrogen; substantially eliminating any electrically charged particles from the plasma to produce a plasma effluent; heating the substrate to a temperature in the range of from about 250 to 300 degrees Centigrade; exposing the substrate and photoresist thereon to the effluent while said temperature is maintained; and simultaneously with the exposure step, irradiating the substrate with collimated ultraviolet radiation.Type: GrantFiled: January 31, 1986Date of Patent: October 13, 1987Assignee: Emergent Technologies CorporationInventor: Richard L. Bersin
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Patent number: 4689112Abstract: This invention relates to an apparatus and process for the uniform dry process treatment of the surface of a substrate. More particularly, the invention relates to an apparatus and process wherein a gas plasma composition having at least one reactive specie is supplied through a first inlet port into a chamber means containing the substrate to be treated. A second gas is also supplied into the chamber through a second inlet port thereby redirecting the gas plasma composition into contact with the substrate in a substantially uniform manner.Type: GrantFiled: October 10, 1986Date of Patent: August 25, 1987Assignee: Emergent Technologies CorporationInventor: Richard L. Bersin
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Patent number: 4687544Abstract: A method and apparatus for dry processing of a substrate is provided. More particularly, a substrate is exposed to a gas, such as an effluent from a gas plasma, having at least one reactive specie, such as a free radical, the gas having substantially no electrically charged particles present. Simultaneously, the substrate is irradiated with ultraviolet radiation to enhance the reaction rate in a controlled manner. Also provided is a means for irradiating the wafer with infrared radiation to heat the wafer independently of the irradiation with ultraviolet radiation.Type: GrantFiled: April 14, 1986Date of Patent: August 18, 1987Assignee: Emergent Technologies CorporationInventor: Richard L. Bersin
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Patent number: 4364413Abstract: An apparatus for controlling the volume of flow of a gas. A reference volume has an input conduit connected to the source of gas and an output conduit connected to a utilization device. Valves in the input and output conduits are cyclically controlled to permit pressure in the reference volume to reach a high and then to attain a low. The reference volume pressure is measured twice during each cycle to provide voltages representative of the high and low pressures. Circuit means control the time and duration of operation of the valves to cause the difference between the high and low pressures to equal a predetermined value.Type: GrantFiled: January 7, 1981Date of Patent: December 21, 1982Assignee: The Perkin-Elmer CorporationInventors: Richard L. Bersin, William H. Clouser
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Patent number: 4303467Abstract: Gas plasma process and gas mixture useful for the removal of materials in the manufacture of semiconductor devices. Substrate wafers or other semiconductor devices are exposed to a gaseous plasma containing SiF.sub.4 or SiF.sub.4 and oxygen for a time sufficient to effect a desired removal of material from the wafer or device. The process and gas are particularly suitable for selective etching of Si.sub.3 N.sub.4 and the stripping of photoresist, as well as the etching of materials such as silicon and compounds containing silicon.Type: GrantFiled: November 11, 1977Date of Patent: December 1, 1981Assignee: Branson International Plasma CorporationInventors: Frank Scornavacca, Richard L. Bersin
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Patent number: 4148705Abstract: Process and apparatus for carrying out a reaction, such as etching aluminum, in the glow discharge of a gas plasma. The plasma is formed between a pair of closely spaced electrodes, and a distributed impedance is provided in series with the plasma to assure uniform distribution of the ionizing current and the glow discharge of the plasma throughout the region between the electrodes.Type: GrantFiled: March 4, 1977Date of Patent: April 10, 1979Assignee: Dionex CorporationInventors: James F. Battey, Richard L. Bersin, Richard F. Reichelderfer, Joseph M. Welty
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Patent number: 4127437Abstract: Process for etching SiO.sub.2 with hydrogen fluoride gas, utilizing an organic material such as negative photoresist as a catalyst. In one embodiment, the negative photoresist is applied directly to the portions of the SiO.sub.2 to be removed, and in another the negative photoresist is spaced away from the SiO.sub.2. In some embodiments, positive photoresist is applied to the portions of the SiO.sub.2 which are to be retained.Type: GrantFiled: September 1, 1977Date of Patent: November 28, 1978Assignee: Dionex CorporationInventors: Richard L. Bersin, James H. Junkin, Richard F. Reichelderfer