Patents by Inventor Richard L. Knipe
Richard L. Knipe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7477219Abstract: According to one embodiment of the present invention a method of reflecting light is disclosed including providing an element having a surface having an edge on which the element is capable of rolling and selectively reflecting light by rolling the surface such that a reflective element associated with the surface selectively reflects light to a desired location.Type: GrantFiled: May 8, 2006Date of Patent: January 13, 2009Assignee: Texas Instruments IncorporatedInventor: Richard L. Knipe
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Patent number: 7466018Abstract: A method and system in which a semiconductor wafer having a plurality of dies is inspected through a visual inspection and/or an electrical test. If certain of the dies on the wafer pass the inspection, then windows are mounted or affixed above those certain dies while they are still a part of the wafer.Type: GrantFiled: June 4, 2007Date of Patent: December 16, 2008Assignee: Texas Instruments IncorporatedInventors: Thomas A. Kocian, Richard L. Knipe, Mark H. Strumpell
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Publication number: 20080293223Abstract: In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.Type: ApplicationFiled: August 4, 2008Publication date: November 27, 2008Applicant: Texas Instruments IncorporatedInventors: Richard L. Knipe, Grady L. Endsley
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Patent number: 7410888Abstract: In accordance with a particular embodiment of the present invention, a method for manufacturing strained silicon is provided. In one embodiment, the method for manufacturing strained silicon includes inducing a curvature in a silicon wafer, depositing an epitaxial layer of silicon upon an upper surface of the silicon water while the silicon wafer is under the induced curvature, and releasing the silicon wafer from the induced curvature, after depositing the epitaxial layer, such that a strain is induced in the epitaxial layer.Type: GrantFiled: December 30, 2004Date of Patent: August 12, 2008Assignee: Texas Instruments IncorporatedInventors: Richard L. Knipe, Grady L. Endsley
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Patent number: 7252395Abstract: A micromirror array fabricated on a semiconductor substrate. The array is comprised of three operating layers. An addressing layer is fabricated on the substrate. A hinge layer is spaced above the addressing layer by an air gap. A mirror layer is spaced over the hinge layer by a second air gap. The hinge layer has a hinge under and attached to the mirror, the hinge permitting the mirror to tilt. The hinge layer further has spring tips under the mirror, which are attached to the addressing layer. These spring tips provide a stationary landing surface for the mirror.Type: GrantFiled: March 10, 2006Date of Patent: August 7, 2007Assignee: Texas Instruments IncorporatedInventors: Anthony DiCarlo, Patrick I. Oden, Richard L. Knipe, Rabah Mezenner, James D. Huffman
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Patent number: 7226810Abstract: A method and system in which a semiconductor wafer having a plurality of dies is inspected through a visual inspection and/or an electrical test. If certain of the dies on the wafer pass the inspection, then windows are mounted or affixed above those certain dies while they are still a part of the wafer.Type: GrantFiled: June 20, 2005Date of Patent: June 5, 2007Assignee: Texas Instruments IncorporatedInventors: Thomas A. Kocian, Richard L. Knipe, Mark H. Strumpell
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Patent number: 7119940Abstract: A capacitively coupled microelectromechanical device and method of operation. The micromechanical device comprises: a semiconductor substrate; a member operable to deflect about a torsion axis to either of at least two states; and a switch driven for selectively connecting the member to a voltage signal. When a logic high signal is stored on the memory capacitor 308, the mirror transistor 310 is turned on, grounding the mirror structure 312. When a logic low signal is stored on the memory capacitor 308, the mirror transistor 310 is turned off, allowing the mirror to float electrically. Mirrors that are tied to a voltage potential, which typically are grounded, are affected by a reset pulse and rotate away from their landed position. When the mirrors have rotated to the opposite side, a bias signal is applied to hold the repositioned mirror in place in the opposite state. Mirrors that electrically are floating do not experience the forces generated by the reset voltage and remain in their previous state.Type: GrantFiled: June 14, 2005Date of Patent: October 10, 2006Assignee: Texas Instruments IncorporatedInventor: Richard L. Knipe
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Patent number: 7011415Abstract: A micromirror array fabricated on a semiconductor substrate. The array is comprised of three operating layers. An addressing layer is fabricated on the substrate. A hinge layer is spaced above the addressing layer by an air gap. A mirror layer is spaced over the hinge layer by a second air gap. The hinge layer has a hinge under and attached to the mirror, the hinge permitting the mirror to tilt. The hinge layer further has spring tips under the mirror, which are attached to the addressing layer. These spring tips provide a stationary landing surface for the mirror.Type: GrantFiled: November 18, 2002Date of Patent: March 14, 2006Assignee: Texas Instruments IncorporatedInventors: Anthony DiCarlo, Patrick I. Oden, Richard L. Knipe, Rabah Mezenner, James D. Huffman
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Patent number: 6908791Abstract: A method and system in which a semiconductor wafer having a plurality of dies is inspected through a visual inspection and/or an electrical test. If certain of the dies on the wafer pass the inspection, then windows are mounted or affixed above those certain dies while they are still a part of the wafer.Type: GrantFiled: April 29, 2002Date of Patent: June 21, 2005Assignee: Texas Instruments IncorporatedInventors: Thomas A. Kocian, Richard L. Knipe, Mark H. Strumpell
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Patent number: 6906850Abstract: A capacitively coupled microelectromechanical device comprising: a semiconductor substrate; a member operable to deflect to either of at least two states; and a switch for selectively connecting the member to a voltage signal. When a logic high signal is stored on memory capacitor, mirror transistor is turned on, grounding the mirror structure. When a logic low signal is stored on the memory capacitor, the mirror transistor is turned off, allowing the mirror to float electrically. Mirrors that are tied to a voltage potential, which typically are grounded, are affected by a reset pulse and rotate away from their landed position. When the mirrors have rotated to the opposite side, a bias signal is applied to hold the repositioned mirror in place in the opposite state. Mirrors that electrically are floating do not experience the forces generated by the reset voltage and remain in their previous state.Type: GrantFiled: December 21, 2001Date of Patent: June 14, 2005Assignee: Texas Instruments IncorporatedInventor: Richard L. Knipe
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Patent number: 6775174Abstract: A one transistor one capacitor micromirror with DRAM memory cell built around a large polysilicon-to-substrate capacitor which is not susceptible to recombination of photo-generated carriers caused by illumination in the projector. This large polysilicon-to-substrate capacitor overshadows the much smaller inherent parallel depletion capacitance which is sensitive to light. The device is further 100% shielded from exposed light by metal layers and the address node is located under the center of the micromirror mirror to obtain maximum shielding of light for the smaller, light sensitive, depletion portion of the capacitance. As a result the micromirror of this invention can adequately hold the cell charge in excess of the device load time of 300 &mgr;Sec even in extremely high brightness projector applications.Type: GrantFiled: December 28, 2001Date of Patent: August 10, 2004Assignee: Texas Instruments IncorporatedInventors: James D. Huffman, Larry J. Hornbeck, Richard L. Knipe
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Publication number: 20030211654Abstract: A method and system in which a semiconductor wafer having a plurality of dies is inspected through a visual inspection and/or an electrical test. If certain of the dies on the wafer pass the inspection, then windows are mounted or affixed above those certain dies while they are still a part of the wafer.Type: ApplicationFiled: April 29, 2002Publication date: November 13, 2003Applicant: Texas Instruments Inc.Inventors: Thomas A. Kocian, Richard L. Knipe, Mark H. Strumpell
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Publication number: 20030095318Abstract: A micromirror array 110 fabricated on a semiconductor substrate 11. The array 110 is comprised of three operating layers 12, 13, 14. An addressing layer 12 is fabricated on the substrate. A hinge layer 13 is spaced above the addressing layer 12 by an air gap. A mirror layer 14 is spaced over the hinge layer 13 by a second air gap. The hinge layer 13 has a hinge 13a under and attached to the mirror 14a, the hinge 13a permitting the mirror 14a to tilt. The hinge layer 13 further has spring tips 13c under the mirror 14a, which are attached to the addressing layer 12. These spring tips 13c provide a stationary landing surface for the mirror 14a.Type: ApplicationFiled: November 18, 2002Publication date: May 22, 2003Inventors: Anthony DiCarlo, Patrick I. Oden, Richard L. Knipe, Rabah Mezenner, James D. Huffman
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Patent number: 6552840Abstract: An improved micromechanical device, particularly a micromirror device having improved electrostatic efficiency. A deflectable member comprised of a mirror 302 and an active hinge yoke 306 is suspended address 308 and landing electrodes 312 on a substrate 310 and above upper address electrodes supported above the substrate 310. The deflectable member is operable to rotate about a torsion hinge axis in response to an electrostatic force between the address electrodes and the deflectable member. The upper address electrodes have a stair stepped shape to narrow a gap between the deflectable member and the upper address electeodes. The gap is narrower near the axis of rotation 810 compared to away from the axis.Type: GrantFiled: November 30, 2000Date of Patent: April 22, 2003Assignee: Texas Instruments IncorporatedInventor: Richard L. Knipe
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Publication number: 20020122238Abstract: A capacitively coupled microelectromechanical device and method of operation. The micromechanical device comprises: a semiconductor substrate; a member operable to deflect about a torsion axis to either of at least two states; and a switch driven for selectively connecting the member to a voltage signal. When a logic high signal is stored on the memory capacitor 308, the mirror transistor 310 is turned on, grounding the mirror structure 312. When a logic low signal is stored on the memory capacitor 308, the mirror transistor 310 is turned off, allowing the mirror to float electrically. Mirrors that are tied to a voltage potential, which typically are grounded, are affected by a reset pulse and rotate away from their landed position. When the mirrors have rotated to the opposite side, a bias signal is applied to hold the repositioned mirror in place in the opposite state. Mirrors that electrically are floating do not experience the forces generated by the reset voltage and remain in their previous state.Type: ApplicationFiled: December 21, 2001Publication date: September 5, 2002Inventor: Richard L. Knipe
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Publication number: 20020122881Abstract: A method of fabricating a micromechanical device. Several of the micromechanical devices are fabricated 20 on a common wafer. After the devices are fabricated, the sacrificial layers are removed 22 leaving open spaces where the sacrificial layers once were. These open spaces allow for movement of the components of the micromechanical device. The devices optionally are passivated 24, which may include the application of a lubricant. After the devices have been passivated, they are tested 26 in wafer form. After testing 26, any surface treatments that are not compatible with the remainder of the processing steps are removed 28. The substrate wafer containing the completed devices receives a conformal overcoat 30. The overcoat layer is thick enough to project the micromechanical structures, but thin and light enough to prevent deforming the underlying micromechanical structures.Type: ApplicationFiled: December 31, 2001Publication date: September 5, 2002Inventors: Toshiyuki Kaeriyama, Richard L. Knipe, Michael A. Mignardi, Simon Joshua Jacobs
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Publication number: 20020093721Abstract: An improved micromechanical device, particularly a micromirror device having improved electrostatic efficiency. A deflectable member comprised of a mirror 302 and an active hinge yoke 306 is suspended address 308 and landing electrodes 312 on a substrate 310 and above upper address electrodes supported above the substrate 310. The deflectable member is operable to rotate about a torsion hinge axis in response to an electrostatic force between the address electrodes and the deflectable member. The upper address electrode have a stair stepped shape to narrow a gap between the deflectable member near the axis of rotation 810, while leaving a wider gap away from the axis. The stair stepped shape is achieved by embedding a portion of an oxide layer 804 between a thin metal layer 806 making up the upper address electrodes 806, the active hinge yoke 306, and the torsion hinges, and a thick metal layer 808 making up the upper address electrodes 806 and the active hinge yoke 306.Type: ApplicationFiled: November 30, 2000Publication date: July 18, 2002Inventor: Richard L. Knipe
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Publication number: 20020085437Abstract: A one transistor one capacitor micromirror with DRAM memory cell built around a large polysilicon-to-substrate capacitor which is not susceptible to recombination of photo-generated carriers caused by illumination in the projector. This large polysilicon-to-substrate capacitor overshadows the much smaller inherent parallel depletion capacitance which is sensitive to light. The device is further 100% shielded from exposed light by metal layers and the address node is located under the center of the micromirror mirror to obtain maximum shielding of light for the smaller, light sensitive, depletion portion of the capacitance. As a result the micromirror of this invention can adequately hold the cell charge in excess of the device load time of 300 &mgr;Sec even in extremely high brightness projector applications.Type: ApplicationFiled: December 28, 2001Publication date: July 4, 2002Inventors: James D. Huffman, Larry J. Hornbeck, Richard L. Knipe
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Patent number: 6285490Abstract: An improved micromechanical device comprising a substrate (104), a deflectable member (102) suspended over the substrate (104), at least one spring-ring (124) supported above the substrate (104); and at least one address electrode (110) spaced apart from substrate (104). The spring-ring (124) resists deflection of the deflectable member (102) when the deflectable member (102) deflects to contact the spring-ring (124). By moving the address electrode (110) off the substrate level, the micromirror is much more immune to particle-caused short circuits, and a planer surface on which to fabricate the mirror (102) is provided without the need to utilize an inverse spacer layer.Type: GrantFiled: December 30, 1999Date of Patent: September 4, 2001Assignee: Texas Instruments IncorporatedInventors: Robert E. Meier, James D. Huffman, Richard L. Knipe
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Patent number: 6147790Abstract: An improved micromechanical device comprising a substrate (104), a rigid deflectable member (302, 314, 326) suspended over the substrate, and at least one spring (328) supported above the substrate and spaced apart from the rigid deflectable member. The spring resists deflection of the rigid deflectable member when the rigid deflectable member deflects to contact the spring. The improved micromechanical device is constructed by fabricating at least one support structure (116) on a substrate, fabricating at least one spring spaced apart from the substrate and supported by at least one of the support structures, and fabricating a deflectable member spaced apart from both the substrate and spring, and supported by at least one of the support structures.Type: GrantFiled: May 13, 1999Date of Patent: November 14, 2000Assignee: Texas Instruments IncorporatedInventors: Robert E. Meier, Richard L. Knipe