Patents by Inventor Richard P. Schneider

Richard P. Schneider has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6259121
    Abstract: An array of n-wavelength vertical cavity surface emitting lasers (VCSELs) can be grown with precise and repeatable wavelength control. First, a foundation VCSEL structure is grown on a substrate. Next, n-paired layers of AlGaAs and InGaP are grown, where n is the desired number of different wavelengths. Next, one of the n regions is masked and etched. The steps of masking and etching are repeated until all n regions are etched. Finally, the upper VCSEL structure is grown.
    Type: Grant
    Filed: September 16, 1999
    Date of Patent: July 10, 2001
    Assignee: Agilent Technologies, Inc.
    Inventors: Brian E. Lemoff, Dubravko Babic, Richard P. Schneider
  • Patent number: 6117699
    Abstract: An array of n-wavelength vertical cavity surface emitting lasers (VCSELs) can be grown with precise and repeatable wavelength control. First, a foundation VCSEL structure is grown on a substrate. Next, n-paired layers of AlGaAs and InGaP are grown, where n is the desired number of different wavelengths. Next, one of the n regions is masked and etched. The steps of masking and etching are repeated until all n regions are etched. Finally, the upper VCSEL structure is grown.
    Type: Grant
    Filed: April 10, 1998
    Date of Patent: September 12, 2000
    Assignee: Hewlett-Packard Company
    Inventors: Brian E. Lemoff, Dubravko Babic, Richard P. Schneider
  • Patent number: 6100586
    Abstract: An electrical contact that comprises a layer of a p-type gallium nitride material, a metal layer, and an intermediate layer of a material different from the gallium nitride material and the metal layer. The intermediate layer is sandwiched between the layer of p-type gallium nitride material and the metal layer. The material of the intermediate layer may be a Group III-V semiconductor that has high band-gap energy, lower than that of the p-type gallium nitride material. The intermediate layer may alternatively include layers of different Group III-V semiconductors. The layers of the different Group III-V semiconductors are arranged in order of their band-gap energies, with the Group III-V semiconductor having the highest band-gap energy next to the layer of the p-type gallium nitride material, and the Group III-V semiconductor having the lowest band-gap energy next to the metal layer. As a further alternative, the material of the intermediate layer may be a metal nitride.
    Type: Grant
    Filed: May 23, 1997
    Date of Patent: August 8, 2000
    Assignee: Agilent Technologies, Inc.
    Inventors: Yong Chen, Long Yang, Shih-Yuan Wang, Richard P. Schneider
  • Patent number: 5927995
    Abstract: A method for providing an epitaxial layer of a first material over a substrate comprising a second material having a lattice constant different from that of the first material. In the method of the present invention, a first layer of the first material is grown on the substrate. A portion of the first layer is treated to render that portion amorphous. The amorphous portion is then annealed at a temperature above the recrystallization point of the amorphous portion, but below the melting point of the crystallized portion of the first layer thereby recrystallizing the amorphous portion of the first layer. The first layer may rendered amorphous by ion implantation. The method may be used to generate GaN layers on sapphire having fewer dislocations than GaN layers generated by conventional deposition techniques.
    Type: Grant
    Filed: April 9, 1997
    Date of Patent: July 27, 1999
    Assignee: Hewlett-Packard Company
    Inventors: Yong Chen, Richard P. Schneider, Jr., Shih-Yun Wang
  • Patent number: 5896408
    Abstract: A VCSEL with a near planar top surface on which the top electrode is deposited. A VCSEL according to the present invention includes a top electrode, a top mirror having a top surface, a light generation region, and a bottom mirror for reflecting light toward the top mirror. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes are etched down from the top surface of the VCSEL to the layer containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region surrounded by an electrically insulating region, the conducting region being positioned under the top electrode.
    Type: Grant
    Filed: August 15, 1997
    Date of Patent: April 20, 1999
    Assignee: Hewlett-Packard Company
    Inventors: Scott W. Corzine, Richard P. Schneider, Jr., Michael R. T. Tan
  • Patent number: 5837561
    Abstract: A method for fabricating transparent substrate vertical cavity surface emitting lasers ("VCSEL"s) using wafer bonding is described. The VCSELs have their active layers located much more closely to a heat sink than is possible in known absorbing substrate VCSELs. The improved heat transport from the active layer to the heat sink permits higher current operation with increased light output as a result of the lower thermal impedance of the system. Alternatively, the same light output can be obtained from the wafer bonded VCSEL at lower drive currents. Additional embodiments use wafer bonding to improve current crowding, current and/or optical confinement in a VCSEL and to integrate additional optoelectronic devices with the VCSEL.
    Type: Grant
    Filed: May 23, 1997
    Date of Patent: November 17, 1998
    Assignee: Hewlett-Packard Company
    Inventors: Fred A. Kish, Jr., Richard P. Schneider, Jr.
  • Patent number: 5838715
    Abstract: A VCSEL 101 comprising an optical cavity having an optical loss and a loss-determining element 117 coupled to the optical cavity. The loss-determining element 117 progressively increases the optical loss of the optical cavity with increasing lateral distance from the optical axis 105. The optical cavity includes a first mirror region 111, a second mirror region 107, a plane light-generating region 125 sandwiched between the first mirror region 111 and the second mirror region 107, perpendicular to the optical axis 105, and an element 113 that defines the lateral extent of the optical cavity in the plane of the light-generating region 125. The first mirror region 111 and the second mirror region 107 are both conductive and have opposite conductivity modes.
    Type: Grant
    Filed: June 20, 1996
    Date of Patent: November 17, 1998
    Assignee: Hewlett-Packard Company
    Inventors: Scott W. Corzine, Dubravko I. Babic, Richard P. Schneider, Jr., Michael R. Tan, Shih-Yuan Wang
  • Patent number: 5724376
    Abstract: A method for fabricating transparent substrate vertical cavity surface emitting lasers ("VCSEL"s) using wafer bonding is described. The VCSELs have their active layers located much more closely to a heat sink than is possible in known absorbing substrate VCSELs. The improved heat transport from the active layer to the heat sink permits higher current operation with increased light output as a result of the lower thermal impedance of the system. Alternatively, the same light output can be obtained from the wafer bonded VCSEL at lower drive currents. Additional embodiments use wafer bonding to improve current crowding, current and/or optical confinement in a VCSEL and to integrate additional optoelectronic devices with the VCSEL.
    Type: Grant
    Filed: November 30, 1995
    Date of Patent: March 3, 1998
    Assignee: Hewlett-Packard Company
    Inventors: Fred A. Kish, Jr., Richard P. Schneider, Jr.
  • Patent number: 5557627
    Abstract: A visible semiconductor laser. The visible semiconductor laser includes an InAlGaP active region surrounded by one or more AlGaAs layers on each side, with carbon as the sole p-type dopant. Embodiments of the invention are provided as vertical-cavity surface-emitting lasers (VCSELs) and as edge-emitting lasers (EELs). One or more transition layers comprised of a substantially indium-free semiconductor alloy such as AlAsP, AlGaAsP, or the like may be provided between the InAlGaP active region and the AlGaAS DBR mirrors or confinement layers to improve carrier injection and device efficiency by reducing any band offsets. Visible VCSEL devices fabricated according to the invention with a one-wavelength-thick (1.lambda.) optical cavity operate continuous-wave (cw) with lasing output powers up to 8 mW, and a peak power conversion efficiency of up to 11%.
    Type: Grant
    Filed: May 19, 1995
    Date of Patent: September 17, 1996
    Assignee: Sandia Corporation
    Inventors: Richard P. Schneider, Jr., Mary H. Crawford
  • Patent number: 5493577
    Abstract: A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).
    Type: Grant
    Filed: December 21, 1994
    Date of Patent: February 20, 1996
    Assignee: Sandia Corporation
    Inventors: Kent D. Choquette, Kevin L. Lear, Richard P. Schneider, Jr.
  • Patent number: 5428634
    Abstract: A vertical cavity surface emitting laser that emits visible radiation is built upon a substrate, then having mirrors, the first mirror on top of the substrate; both sets of mirrors being a distributed Bragg reflector of either dielectrics or other materials which affect the resistivity or of semiconductors, such that the structure within the mirror comprises a plurality of sets, each having a thickness of .lambda./2n where n is the index of refraction of each of the sets; each of the mirrors adjacent to spacers which are on either side of an optically active bulk or quantum well layer; and the spacers and the optically active layer are from one of the following material systems: In.sub.z (Al.sub.y Ga.sub.1-y).sub.1-z P, InAlGaAs, AlGaAs, InGaAs, or AlGaP/GaP, wherein the optically active region having a length equal to m .lambda./2n.sub.eff where m is an integer and n.sub.
    Type: Grant
    Filed: November 5, 1992
    Date of Patent: June 27, 1995
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Robert P. Bryan, Gregory R. Olbright, James A. Lott, Richard P. Schneider, Jr.
  • Patent number: 5351256
    Abstract: Visible laser light output from an electrically injected vertical cavity surface emitting laser (VSCEL) diode is enabled by the addition of phase-matching spacer layers on either side of the active region to form the optical cavity. The spacer layers comprise InAlP which act as charge carrier confinement means. Distributed Bragg reflector layers are formed on either side of the optical cavity to act as mirrors.
    Type: Grant
    Filed: April 28, 1993
    Date of Patent: September 27, 1994
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Richard P. Schneider, James A. Lott
  • Patent number: 5018062
    Abstract: An electronic device comprising a state machine is coupled between the ROM and its socket. When armed by an arming sequence, the device responds to an address from a microprocessor during a reset operation to modify the output of the ROM. The modified output causes a jump to a routine in RAM rather than a jump in an initialization routine in the ROM. This enables a user to change the microprocessor's addressing mode from protected to real without a complete initialization of the system. Arming of the device and reset of microprocessor is caused by a protected mode routine, and after reset the mircroprocessor processes a real mode routine.
    Type: Grant
    Filed: October 23, 1987
    Date of Patent: May 21, 1991
    Assignee: A.I. Architects, Inc.
    Inventors: David E. Culler, Gregory M. Papadopoulos, Richard P. Schneider