Abstract: A steerable multibeam five element cross-feed cluster antenna (16) system. The feed power is divided into five branches. Each branch includes a switching network (12A-12E) comprised of a plurality of time delay elements (90A; 92A) each individually controlled by a respective electromagnetic latching switch (56A,B; 58A,B; 60A,B; 62A,B; 46A,B). Frequency independent individual two-dimensional beam steering at IF scanning frequencies is thereby provided wherein discrete incremental time delays are introduced by the switching networks into each branch and the signals recombined thereafter to form each beam. The electromagnetic latched switching reduces power consumption and permits higher power switching and reciprocal coincident transmit and receive operation. Frequency independence due to incremental time delay switching permits coincident reciprocal operation and steering for transmit-receive signal paths carrying different transmit-receive frequencies.

Abstract: A structure with a surface portion of dielectric material which passes electromagnetic radiation and with a portion below the surface which includes material that absorbs the radiation, the face of the structure being formed with numerous steep ridges. The steepness of the dielectric material results in a high proportion of the electromagnetic energy passing through the surface for absorption by the absorbing material under the surface. A backing of aluminum or other highly heat-conductive and reflective material lies under the face and has very steep protuberances supporting the absorbing and dielectric materials.

Abstract: Millimeter-wave electronic devices are produced first by micromachining an epitaxial layer on a substrate wafer to a precise thickness by directing an ion beam over the epitaxial layer. Any bombardment damage is removed by a light chemical etch. Thereafter, an insulative layer with a mask is placed over the micromachined epitaxial layer and the ion beam is broadly directed onto the masked wafer to micromachine precise holes through unmasked portions of the insulative layer. Micromachining may proceed until approximately 500 A thickness of the insulative layer remains, this remaining layer being removed by a brief chemical etch to expose the underlying epitaxial layer. Alternatively, in cases where a slight recess into the semiconductor is desired to alter the electric field lines at the interface between the oxide and the semiconductor, the ion beam may be permitted to etch completely through the oxide film and into the epitaxial layer to the desired depth.