Patents by Inventor Rikimaru Sakamoto
Rikimaru Sakamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240006183Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.Type: ApplicationFiled: August 31, 2023Publication date: January 4, 2024Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hikaru TOKUNAGA, Satoshi HAMADA, Keisuke HASHIMOTO, Rikimaru SAKAMOTO
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Patent number: 11798810Abstract: A resist underlayer film-forming composition exhibiting high etching resistance, high heat resistance, and excellent coatability; a resist underlayer film obtained using the resist underlayer film-forming composition and a method for producing the same; a method for forming a resist pattern; and a method for producing a semiconductor device. A resist underlayer film-forming composition including a polymer and a compound represented by Formula (1) as a solvent. In Formula (1), R1, R2, and R3 in Formula (1) each independently represent a hydrogen atom or an alkyl group having 1 to 20 carbon atoms, which may be interrupted by an oxygen atom, a sulfur atom, or an amide bond, and R1, R2, and R3 may be the same or different and may bond to each other to form a ring structure.Type: GrantFiled: January 9, 2018Date of Patent: October 24, 2023Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hikaru Tokunaga, Satoshi Hamada, Keisuke Hashimoto, Rikimaru Sakamoto
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Publication number: 20230324802Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.Type: ApplicationFiled: June 9, 2023Publication date: October 12, 2023Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hikaru TOKUNAGA, Daigo SAITO, Keisuke HASHIMOTO, Rikimaru SAKAMOTO
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Publication number: 20230287165Abstract: A layer contains a block copolymer in which a microphase-separated structure of the block copolymer has been induced to be perpendicular to a substrate, the process being difficult to perform by means of heating at atmospheric pressure. A method produces this layer. A method produces a semiconductor device in which a vertically phase-separated block copolymer layer is used. The vertically phase-separated block copolymer layer is formed by heating under a pressure below atmospheric pressure and at a temperature at which induced self-assembly can occur. It is preferable that the vertical phase separation includes a lamellar portion. It is preferable that the lamellar portion includes PMMA. It is preferable that the heating temperature is 290° C. or higher. It is preferable to additionally have a layer, which neutralizes the surface energy of the block copolymer, beneath the block copolymer layer.Type: ApplicationFiled: August 18, 2021Publication date: September 14, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Ryuta MIZUOCHI, Hiroyuki WAKAYAMA, Mamoru TAMURA, Makoto NAKAJIMA, Rikimaru SAKAMOTO
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Patent number: 11720024Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.Type: GrantFiled: August 4, 2022Date of Patent: August 8, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hikaru Tokunaga, Daigo Saito, Keisuke Hashimoto, Rikimaru Sakamoto
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Publication number: 20230244141Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.Type: ApplicationFiled: March 30, 2023Publication date: August 3, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Hikaru TOKUNAGA, Takafumi ENDO, Keisuke HASHIMOTO, Rikimaru SAKAMOTO
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Publication number: 20230213857Abstract: Provided is a resist underlayer film-forming composition that is used in a lithographic process in semiconductor manufacturing and has excellent storage stability. The resist underlayer film-forming composition contains: a polymer having a disulfide bond in a main chain; a radical trapping agent; and a solvent. The radical trapping agent is preferably a compound having a ring structure or a thioether structure. The ring structure is preferably an aromatic ring structure having 6-40 carbon atoms or a 2,2,6,6-tetramethylpiperidine structure.Type: ApplicationFiled: February 13, 2020Publication date: July 6, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Satoshi KAMIBAYASHI, Takafumi ENDO, Yuto HASHIMOTO, Yuki ENDO, Takahiro KISHIOKA, Rikimaru SAKAMOTO
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Patent number: 11681223Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40.Type: GrantFiled: July 31, 2017Date of Patent: June 20, 2023Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hikaru Tokunaga, Takafumi Endo, Keisuke Hashimoto, Rikimaru Sakamoto
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Patent number: 11674053Abstract: A composition for forming an underlayer film necessary for facilitating alignment of self-assembled film into desired vertical pattern. Composition for forming an underlayer film of self-assembled film including a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound in main chain. The polymer is a polymer having unit structure containing aliphatic polycyclic structure of aliphatic polycyclic compound with aromatic ring structure of aromatic ring-containing compound or polymer chain derived from vinyl group of vinyl group-containing compound in main chain. The polymer has unit structure of Formula (1): X—Y??Formula (1) wherein X is single bond, divalent group having vinyl structure as polymer chain, or divalent group having aromatic ring-containing structure as polymer chain, and Y is divalent group having aliphatic polycyclic structure as polymer chain. The aliphatic polycyclic compound is bi- to hexa-cyclic diene compound.Type: GrantFiled: September 16, 2014Date of Patent: June 13, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Takafumi Endo, Yasunobu Someya, Hiroyuki Wakayama, Rikimaru Sakamoto
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Patent number: 11675270Abstract: A resist underlayer film-forming composition for lithography including a copolymer having a structural unit of the following Formula (1) to Formula (3), a crosslinking agent, an organic acid catalyst, and a solvent: (wherein R1s are independently a hydrogen atom or a methyl group, R2 is a C1-3 alkylene group, A is a protective group, R3 is an organic group having a 4-membered ring to 7-membered ring lactone framework, adamantane framework, tricyclodecane framework or norbornane framework, R4 is a linear, branched or cyclic organic group having a carbon atom number of 1 to 12 in which at least one hydrogen atom is substituted with a fluoro group and which optionally has at least one hydroxy group as a substituent).Type: GrantFiled: September 15, 2017Date of Patent: June 13, 2023Assignee: NISSAN CHEMICAL CORPORATIONInventors: Tokio Nishita, Rikimaru Sakamoto
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Patent number: 11675269Abstract: There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.Type: GrantFiled: September 15, 2011Date of Patent: June 13, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Rikimaru Sakamoto, Bangching Ho, Takafumi Endo
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Publication number: 20230174702Abstract: A layer including a block copolymer in which a microphase-separated structure of the block copolymer has been induced perpendicular to a substrate, this process being difficult in heating under atmospheric pressure; a method for producing the layer; and a method for producing a semiconductor device in which is used a vertically phase-separated layer of a block copolymer. A vertically phase-separated layer of a block copolymer formed by heating at a pressure below atmospheric pressure and a temperature at which induced self-assembly can occur.Type: ApplicationFiled: May 25, 2021Publication date: June 8, 2023Applicant: NISSAN CHEMICAL CORPORATIONInventors: Ryuta MIZUOCHI, Mamoru TAMURA, Makoto NAKAJIMA, Rikimaru SAKAMOTO
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Patent number: 11650505Abstract: A resist underlayer film for lithography has high solubility in a resist solvent (solvent used in lithography) for expressing good coating film forming property and a smaller selection ratio of dry etching rate as compared with a resist. A resist underlayer film-forming composition containing a novolac resin containing a structure (C) obtained by a reaction of an aromatic ring of an aromatic compound (A) with a hydroxy group-containing aromatic methylol compound (B). The aromatic compound (A) may be a component constituting the structure (C) in the novolac resin. The hydroxy group-containing aromatic methylol compound (B) may be a compound of Formula (1): The hydroxy group-containing aromatic methylol compound (B) may be 2-hydroxybenzyl alcohol, 4-hydroxybenzyl alcohol, or 2,6-di-tert-butyl-4-hydroxymethyl phenol.Type: GrantFiled: August 4, 2015Date of Patent: May 16, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hirokazu Nishimaki, Rikimaru Sakamoto, Keisuke Hashimoto, Takafumi Endo
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Patent number: 11592747Abstract: There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C6-40 arylene group derived from polyhydroxy aromatic compound; B is C6-40 arylene group or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X+ is H+, NH4+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C1-10 alkyl group or C6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C4-40 ring together with carbon atom to which they are bonded.Type: GrantFiled: December 12, 2013Date of Patent: February 28, 2023Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Yasunobu Someya, Ryo Karasawa, Keisuke Hashimoto, Tetsuya Shinjo, Rikimaru Sakamoto
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Publication number: 20220404707Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1): wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B.Type: ApplicationFiled: August 4, 2022Publication date: December 22, 2022Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Hikaru TOKUNAGA, Daigo SAITO, Keisuke HASHIMOTO, Rikimaru SAKAMOTO
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Patent number: 11531269Abstract: Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm).Type: GrantFiled: October 2, 2017Date of Patent: December 20, 2022Assignee: NISSAN CHEMICAL CORPORATIONInventors: Shuhei Shigaki, Satoshi Takeda, Wataru Shibayama, Makoto Nakajima, Rikimaru Sakamoto
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Patent number: 11506980Abstract: Provided are: a resist underlayer film formation composition combining high etching resistance, high heat resistance, and excellent coating properties; a resist underlayer film in which the resist underlayer film formation composition is used and a method for manufacturing the resist underlayer film; a method for forming a resist pattern; and a method for manufacturing a semiconductor device. The resist underlayer film formation composition is characterized by including the compound represented by Formula (1), or a polymer derived from the compound represented by Formula (1) (where: AA represents a single bond or a double bond; X1 represents —N(R1)—; X2 represents —N(R2)—; X3 represents —CH(R3)—; X4 represents —CH(R4)— etc.; R1, R2, R3, and R4 represent hydrogen atoms, C1-20 straight chain, branched, or cyclic alkyl groups, etc.; R5, R6, R9, and R10 represent hydrogen atoms, hydroxy groups, alkyl groups, etc.; R7 and R8 represent benzene rings or naphthalene rings; and n and o are 0 or 1).Type: GrantFiled: April 20, 2018Date of Patent: November 22, 2022Assignee: NISSAN CHEMICAL CORPORATIONInventors: Hikaru Tokunaga, Keisuke Hashimoto, Rikimaru Sakamoto
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Patent number: 11440985Abstract: An underlayer film-forming composition which exhibits excellent solvent resistance, and which is capable of orthogonally inducing, with respect to a substrate, a microphase separation structure in a layer formed on the substrate, said layer including a block copolymer. The underlayer film-forming composition includes a copolymer which includes: (A) unit structures derived from styrene compounds including tert-butyl groups; (B) unit structures, other than those in (A) above, which are derived from aromatic-containing vinyl compounds which do not include hydroxy groups; (C) unit structures derived from compounds which include (meth)acryloyl groups, and do not include hydroxy groups; and (D) unit structures derived from compounds including crosslink-forming groups. The copolymerization ratios with respect to the whole copolymer are: (A) 25-90 mol %; (B) 0-65 mol %; (C) 0-65 mol %; and (D) 10-20 mol %. Unit structures including aromatics account for 81-90 mol % of (A)+(B)+(C).Type: GrantFiled: January 16, 2018Date of Patent: September 13, 2022Assignee: NISSAN CHEMICAL CORPORATIONInventors: Ryuta Mizuochi, Yasunobu Someya, Hiroyuki Wakayama, Rikimaru Sakamoto
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Patent number: 11385546Abstract: There are provided a plasma-curable multi-level substrate coating film-forming composition for forming a coating film having planarity on a substrate, wherein the composition can fill a pattern sufficiently.Type: GrantFiled: April 11, 2018Date of Patent: July 12, 2022Assignee: NISSAN CHEMICAL CORPORATIONInventors: Takafumi Endo, Hikaru Tokunaga, Keisuke Hashimoto, Rikimaru Sakamoto
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Patent number: 11372330Abstract: There is provided anti-reflective coating forming composition containing a reaction product of an isocyanuric acid compound having two or three 2,3-epoxypropyl groups with a benzoic acid compound. The anti-reflective coating obtained from the composition has a high preventive effect for reflected light, causes no intermixing with photoresists, can form a photoresist pattern having no footing at the lower part, and can use in lithography process by use of a light such as ArF excimer laser beam and F2 excimer laser beam, etc.Type: GrantFiled: September 27, 2005Date of Patent: June 28, 2022Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.Inventors: Takahiro Kishioka, Rikimaru Sakamoto, Daisuke Maruyama