Patents by Inventor Rimpei KINDAICHI

Rimpei KINDAICHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10988857
    Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
    Type: Grant
    Filed: April 19, 2019
    Date of Patent: April 27, 2021
    Assignee: SHOWA DENKO K.K.
    Inventors: Rimpei Kindaichi, Yoshishige Okuno, Tomohiro Shonai
  • Publication number: 20200199745
    Abstract: Provided is a SiC chemical vapor deposition apparatus including: a furnace body inside of which a growth space is formed; and a placement table which is positioned in the growth space and has a placement surface on which a SiC wafer is placed, in which the furnace body comprises a first hole which is positioned on an upper portion which faces the placement surface and through which a raw material gas is introduced into the growth space, a second hole which is positioned on a side wall of the furnace body and through which a purge gas flows into the growth space, a third hole which is positioned on the side wall of the furnace body at a lower position than the second hole and discharges the gases in the growth space, and a protrusion which is protrudes towards the growth space from a lower end of the second hole to adjust a flow of the raw material gas.
    Type: Application
    Filed: December 17, 2019
    Publication date: June 25, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshikazu UMETA, Yoshishige OKUNO, Rimpei KINDAICHI
  • Publication number: 20200190665
    Abstract: A SiC chemical vapor deposition device according to the present embodiment includes a placement table on which a SiC wafer is placed; and a furnace body that covers the placement table, in which the furnace body has a side wall and a ceiling that has a gas supply port for supplying raw material gas to the inside of the furnace body, covers a periphery of the gas supply port, and is positioned above the placement table, and emissivity of an inner surface of the ceiling is lower than that of an inner surface of the side wall.
    Type: Application
    Filed: December 11, 2019
    Publication date: June 18, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Yoshikazu UMETA, Yoshishige OKUNO, Rimpei KINDAICHI
  • Publication number: 20200181797
    Abstract: A crystal growing apparatus includes: a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside during heating to a higher or lower temperature than that of the other regions; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other.
    Type: Application
    Filed: December 4, 2019
    Publication date: June 11, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yoshishige OKUNO, Tomohiro SHONAI
  • Publication number: 20200181796
    Abstract: A crystal growing apparatus includes: a crucible including a main body portion and a low radiation portion having a radiation rate lower than that of the main body portion; and a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat, and the low radiation portion is provided on an outer surface of a first point which is a heating center, in a case where the crucible does not include the low radiation portion.
    Type: Application
    Filed: December 4, 2019
    Publication date: June 11, 2020
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yoshishige OKUNO, Tomohiro SHONAI
  • Publication number: 20190330761
    Abstract: A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.
    Type: Application
    Filed: April 19, 2019
    Publication date: October 31, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yoshishige OKUNO, Tomohiro SHONAI
  • Publication number: 20190194822
    Abstract: A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.
    Type: Application
    Filed: December 18, 2018
    Publication date: June 27, 2019
    Applicant: SHOWA DENKO K.K.
    Inventors: Rimpei KINDAICHI, Yohei Fujikawa, Yoshishige Okuno