Patents by Inventor Risa YAMAKOSHI
Risa YAMAKOSHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11450524Abstract: There is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. An opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes.Type: GrantFiled: March 14, 2018Date of Patent: September 20, 2022Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Kosuke Takagi, Risa Yamakoshi, Takanori Ueno
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Patent number: 11041240Abstract: There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.Type: GrantFiled: March 22, 2018Date of Patent: June 22, 2021Assignee: HITACHI KOKUSAI ELECTRIC, INC.Inventors: Kosuke Takagi, Risa Yamakoshi, Hideki Horita, Atsushi Hirano
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Patent number: 10607833Abstract: There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.Type: GrantFiled: December 13, 2016Date of Patent: March 31, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Katsuyoshi Harada, Takashi Ozaki, Masato Terasaki, Risa Yamakoshi, Satoshi Shimamoto, Jiro Yugami, Yoshiro Hirose
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Patent number: 10513775Abstract: A method of manufacturing a semiconductor device, includes: forming an oxynitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate through a first nozzle, supplying a nitriding gas to the substrate through a second nozzle, and supplying an oxidizing gas to the substrate through a third nozzle, wherein in the act of supplying the nitriding gas, an inert gas is supplied from at least one of the first nozzle and the third nozzle at a first flow rate, and in the act of supplying the oxidizing gas, an inert gas is supplied from the second nozzle at a second flow rate larger than the first flow rate.Type: GrantFiled: July 6, 2017Date of Patent: December 24, 2019Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Risa Yamakoshi, Masato Terasaki, Takashi Ozaki, Naonori Akae, Hideki Horita
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Publication number: 20180363137Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.Type: ApplicationFiled: August 22, 2018Publication date: December 20, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke TAKAGI, Ryota SASAJIMA, Shintaro KOGURA, Naonori AKAE, Risa YAMAKOSHI, Toshiki FUJINO, Masato TERASAKI, Masanori MINAMI
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Publication number: 20180277355Abstract: There is provided a technique that includes a process chamber in which a process is performed to a substrate, the process including forming a film containing a main element, a first nozzle configured to supply a precursor containing the main element to the substrate in the process chamber, and a second nozzle configured to supply a reactant to the substrate in the process chamber. The first nozzle includes a first ceiling hole provided at a ceiling portion of the first nozzle and opened in a vertical direction, and a plurality of first side holes provided at a side portion of the first nozzle and opened in a horizontal direction. An opening area of the first ceiling hole is larger than an opening area of each of the plurality of first side holes.Type: ApplicationFiled: March 14, 2018Publication date: September 27, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke TAKAGI, Risa YAMAKOSHI, Takanori UENO
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Publication number: 20180274098Abstract: There is provided a technique that includes: a process chamber in which a process of forming a film containing a main element on a substrate is performed; a first nozzle configured to supply a precursor containing the main element to the substrate in the process chart; a second nozzle separated from the first nozzle and configured to supply the precursor to the substrate in the process chamber; a third nozzle configured to supply a reactant to the substrate in the process chamber; and a plurality of first exhaust ports configured to exhaust an internal atmosphere of the process chamber, wherein each of the plurality of first exhaust ports is disposed at a position which does not face a first gas ejection hole of the first nozzle and a second gas ejection hole of the second nozzle, in a plan view.Type: ApplicationFiled: March 22, 2018Publication date: September 27, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke TAKAGI, Risa YAMAKOSHI, Hideki HORITA, Atsushi HIRANO
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Patent number: 10081868Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.Type: GrantFiled: July 15, 2016Date of Patent: September 25, 2018Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke Takagi, Ryota Sasajima, Shintaro Kogura, Naonori Akae, Risa Yamakoshi, Toshiki Fujino, Masato Terasaki, Masayoshi Minami
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Patent number: 9934960Abstract: A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including: (a) supplying a source gas to a substrate in a process container; (b) supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing (a); (c) supplying a reactive gas to the substrate; and (d) supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing (c).Type: GrantFiled: March 3, 2016Date of Patent: April 3, 2018Assignee: Hitachi Kokusai Electric, Inc.Inventors: Hideki Horita, Risa Yamakoshi, Masato Terasaki
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Patent number: 9905413Abstract: A method of manufacturing a semiconductor device may include: performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle including: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas to the substrate via a second nozzle different from the first nozzle, wherein (a) and (b) are performed non-simultaneously, wherein (b) may include: (b-1) supplying only the oxidizing gas while suspending a supply of the nitriding gas; and (b-2) simultaneously supplying the nitriding gas and the oxidizing gas, wherein (b-1) and (b-2) are consecutively performed.Type: GrantFiled: March 8, 2017Date of Patent: February 27, 2018Assignee: HITACHI KOKUSAI ELECTRIC, INC.Inventors: Risa Yamakoshi, Takashi Ozaki, Masato Terasaki, Naonori Akae, Hideki Horita
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Publication number: 20170298508Abstract: A method of manufacturing a semiconductor device, includes: forming an oxynitride film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate through a first nozzle, supplying a nitriding gas to the substrate through a second nozzle, and supplying an oxidizing gas to the substrate through a third nozzle, wherein in the act of supplying the nitriding gas, an inert gas is supplied from at least one of the first nozzle and the third nozzle at a first flow rate, and in the act of supplying the oxidizing gas, an inert gas is supplied from the second nozzle at a second flow rate larger than the first flow rate.Type: ApplicationFiled: July 6, 2017Publication date: October 19, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Risa YAMAKOSHI, Masato TERASAKI, Takashi OZAKI, Naonori AKAE, Hideki HORITA
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Publication number: 20170178889Abstract: A method of manufacturing a semiconductor device may include: performing a cycle a predetermined number of times to form an oxynitride film on a substrate, the cycle including: (a) supplying a source gas to the substrate via a first nozzle; and (b) supplying a nitriding gas and an oxidizing gas to the substrate via a second nozzle different from the first nozzle, wherein (a) and (b) are performed non-simultaneously, wherein (b) may include: (b-1) supplying only the oxidizing gas while suspending a supply of the nitriding gas; and (b-2) simultaneously supplying the nitriding gas and the oxidizing gas, wherein (b-1) and (b-2) are consecutively performed.Type: ApplicationFiled: March 8, 2017Publication date: June 22, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Risa YAMAKOSHI, Takashi OZAKI, Masato TERASAKI, Naonori AKAE, Hideki HORITA
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Publication number: 20170170004Abstract: There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.Type: ApplicationFiled: December 13, 2016Publication date: June 15, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Katsuyoshi HARADA, Takashi OZAKI, Masato TERASAKI, Risa YAMAKOSHI, Satoshi SHIMAMOTO, Jiro YUGAMI, Yoshiro HIROSE
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Publication number: 20170051408Abstract: Provided is a technology including a nozzle base end portion which is provided in a processing chamber processing a substrate to extend in a vertical direction and into which a processing gas processing the substrate is introduced, a nozzle distal end portion which is configured in a U shape and in which a gas supply hole supplying the processing gas is provided to a side surface of the substrate, and a gas residence suppressing hole which is provided in a downstream end of the nozzle distal end portion and has a diameter larger than that of the gas supply hole.Type: ApplicationFiled: July 15, 2016Publication date: February 23, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Kosuke TAKAGI, Ryota SASAJIMA, Shintaro KOGURA, Naonori AKAE, Risa YAMAKOSHI, Toshiki FUJINO, Masato TERASAKI, Masayoshi MINAMI
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Publication number: 20160284539Abstract: A technique capable of suppressing the generation of foreign matter in a process container involves a method of manufacturing a semiconductor device including: (a) supplying a source gas to a substrate in a process container; (b) supplying an inert gas to an inner wall of an opening of the process container at a first flow rate while performing (a); (c) supplying a reactive gas to the substrate; and (d) supplying the inert gas to the inner wall at a second flow rate lower than the first flow rate while performing (c).Type: ApplicationFiled: March 3, 2016Publication date: September 29, 2016Inventors: Hideki HORITA, Risa YAMAKOSHI, Masato TERASAKI