Patents by Inventor Robert Brennan Milligan
Robert Brennan Milligan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220228264Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.Type: ApplicationFiled: April 6, 2022Publication date: July 21, 2022Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
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Patent number: 11306395Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.Type: GrantFiled: June 28, 2017Date of Patent: April 19, 2022Assignee: ASM IP Holding B.V.Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
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Patent number: 11233133Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.Type: GrantFiled: January 4, 2019Date of Patent: January 25, 2022Assignee: ASM IP Holding B.V.Inventors: Chiyu Zhu, Timo Asikainen, Robert Brennan Milligan
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Publication number: 20210407809Abstract: Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H2. In some embodiments the thin film comprises MoC, Mo2C, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.Type: ApplicationFiled: June 21, 2021Publication date: December 30, 2021Inventors: Bhushan Zope, Eric Christopher Stevens, Shankar Swaminathan, Eric James Shero, Robert Brennan Milligan
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Publication number: 20210404060Abstract: Vapor deposition methods for depositing tungsten-containing thin films are provided. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten oxyhalide, a second reactant such as CO, and a third reactant such as H2. In some embodiments a substrate is contacted with a vapor phase first reactant comprising a tungsten precursor, such as a tungsten hexacarbonyl, a second reactant comprising a first oxidant, such as H2O, and a third reactant comprising a reducing agent, such as CO. In some embodiments the deposition process is an ALD process.Type: ApplicationFiled: June 21, 2021Publication date: December 30, 2021Inventors: Robert Brennan Milligan, Eric James Shero, Shankar Swaminathan, Bhushan Zope
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Patent number: 10865475Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.Type: GrantFiled: April 21, 2016Date of Patent: December 15, 2020Assignee: ASM IP Holding B.V.Inventors: Petri Raisanen, Eric Shero, Suvi Haukka, Robert Brennan Milligan, Michael Eugene Givens
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Publication number: 20190140067Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.Type: ApplicationFiled: January 4, 2019Publication date: May 9, 2019Applicant: ASM IP Holding B.V.Inventors: Chiyu Zhu, Timo Asikainen, Robert Brennan Milligan
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Patent number: 10211308Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.Type: GrantFiled: October 21, 2015Date of Patent: February 19, 2019Assignee: ASM IP Holding B.V.Inventors: Chiyu Zhu, Timo Asikainen, Robert Brennan Milligan
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Publication number: 20190003052Abstract: An apparatus and method for depositing a transition metal nitride film on a substrate by atomic layer deposition in a reaction space defined by an at least one chamber wall and showerhead is disclosed. The apparatus may include, a substrate support disposed within the reaction space, the substrate support configured for supporting at least one substrate and a temperature control system for controlling a temperature of the at least one chamber wall at those portions of the at least one chamber wall that is exposed to a vapor phase reactant. The apparatus may also include a temperature control system for controlling a temperature of the showerhead, wherein the temperature control system for controlling a temperature of the showerhead is configured to control the temperature of the showerhead to a temperature of between approximately 80° C. and approximately 160° C.Type: ApplicationFiled: June 28, 2017Publication date: January 3, 2019Inventors: Eric James Shero, Robert Brennan Milligan, William George Petro, Eric Wang, Fred Alokozai, Dong Li, Hao Wang, Melvin Verbaas, Luping Li
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Patent number: 10087522Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.Type: GrantFiled: April 21, 2016Date of Patent: October 2, 2018Assignee: ASM IP Holding B.V.Inventors: Petri Raisanen, Eric Shero, Suvi Haukka, Robert Brennan Milligan, Michael Eugene Givens
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Patent number: 10083836Abstract: A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.Type: GrantFiled: July 24, 2015Date of Patent: September 25, 2018Assignee: ASM IP Holding B.V.Inventor: Robert Brennan Milligan
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Patent number: 10023960Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: GrantFiled: March 22, 2017Date of Patent: July 17, 2018Assignee: ASM IP Holdings B.V.Inventors: Fred Alokozai, Robert Brennan Milligan
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Publication number: 20170306478Abstract: A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.Type: ApplicationFiled: April 21, 2016Publication date: October 26, 2017Inventors: Petri Raisanen, Eric Shero, Suvi Haukka, Robert Brennan Milligan, Michael Eugene Givens
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Publication number: 20170306479Abstract: A method for depositing a metal film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a reducing precursor onto the substrate. A reaction between the metal halide precursor and the reducing precursor forms a metal film. Specifically, the method discloses forming a metal boride or a metal silicide film.Type: ApplicationFiled: April 21, 2016Publication date: October 26, 2017Inventors: Petri Raisanen, Eric Shero, Suvi Haukka, Robert Brennan Milligan, Michael Eugene Givens
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Publication number: 20170191164Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: ApplicationFiled: March 22, 2017Publication date: July 6, 2017Inventors: Fred Alokozai, Robert Brennan Milligan
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Publication number: 20170117141Abstract: Methods of forming thin-film structures including one or more NbMC layers, and structures and devices including the one or more NbMC layers are disclosed. The NbMC layers enable tuning of various structure and device properties, including resistivity, current leakage, and work function.Type: ApplicationFiled: October 21, 2015Publication date: April 27, 2017Inventors: Chiyu Zhu, Timo Asikainen, Robert Brennan Milligan
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Patent number: 9605342Abstract: Embodiments related to hardware and methods for processing a semiconductor substrate are disclosed. One example film deposition reactor includes a process gas distributor including a plasma gas-feed inlet located to supply plasma gas to a plasma generation region within the film deposition reactor and a precursor gas-feed inlet located to supply film precursor gas downstream of the plasma generation region; an insulating confinement vessel configured to maintain a plasma generation region at a reduced pressure within the film deposition reactor and an inductively-coupled plasma (ICP) coil arranged around a portion of a sidewall of the insulating confinement vessel and positioned so that the sidewall separates the plasma generation region from the ICP coil; and a susceptor configured to support the semiconductor substrate so that a film deposition surface of the semiconductor substrate is exposed to a reaction region formed downstream of the process gas distributor.Type: GrantFiled: March 16, 2015Date of Patent: March 28, 2017Assignee: ASM IP Holding B.V.Inventors: Fred Alokozai, Robert Brennan Milligan
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Publication number: 20170025280Abstract: A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.Type: ApplicationFiled: July 24, 2015Publication date: January 26, 2017Inventor: Robert Brennan Milligan
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Patent number: 9412564Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: GrantFiled: March 16, 2015Date of Patent: August 9, 2016Assignee: ASM IP Holding B.V.Inventors: Robert Brennan Milligan, Fred Alokozai
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Publication number: 20160013024Abstract: A processing chamber including a reaction chamber having a processing area, a processing gas inlet in communication with the processing area, a first excited species generation zone in communication with the processing gas inlet and a second exited species generation zone in communication with the processing gas inlet. A method of processing a substrate including the steps of loading a substrate within a processing area, activating a first excited species generation zone to provide a first excited species precursor to the processing area during a first pulse and, activating a second excited species generation zone to provide a second excited species precursor different from the first excited species precursor to the processing area during a second pulse.Type: ApplicationFiled: March 16, 2015Publication date: January 14, 2016Inventors: Robert Brennan Milligan, Fred Alokozai