Abstract: A method for producing high resolution patterned resist images having excellent etch resistance and superior thermal and dimensional stability comprises the steps of:(a) forming a planarizing layer resistant to silicon uptake on a substrate;(b) providing a positive-working photoresist composition containing --OH or --NH-- groups over the planarizing layer,(c) imagewise exposing the resist to activating radiation,(d) developing the exposed resist,(e) contacting the developed resist with a vapor comprising a silicon-containing compound to effect silylation thereof and thereby impart etch resistance, the silicon-containing compound having the structural formula: ##STR1## wherein: X.sup.1 and X.sup.2 are individually chloro or ##STR2## wherein R.sup.3 and R.sup.4 are individually H or alkyl; andR.sup.1 and R.sup.2 are individually H or alkyl; and(f) contacting the planarizing layer with an oxygen-containing plasma so as to preferentially remove portions thereof.

Abstract: An imaging system is provided wherein a blocked dye precursor is activated by an amine to an unblocked form which, in the presence of an inert cobalt (III) complex containing amine releasing ligands, undergoes a redox reaction to form a dye. The amine generated during the redox reaction causes further dye formation, giving increased speed.