Patents by Inventor Robert G. O'Neill

Robert G. O'Neill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9767996
    Abstract: Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A plurality of petal groups is provided with each petal group comprising a substantially-flat structure, wherein each petal group is electrically connected to at least one electrical lead of the plurality of electrical leads and wherein each petal group is insulated from any other petal group, wherein the plurality of petal groups form a radial symmetry around a vertical axis. Each substantially flat structure comprises a sector of a conductive annulus and a plurality of conductive petals, each connected to the sector of the conductive annulus, wherein the at least one electrical lead is connected to substantially equal potential locations in each petal group.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: September 19, 2017
    Assignee: Lam Research Corporation
    Inventors: Robert G. O'Neill, Neil M. P. Benjamin, Jie Zhang
  • Publication number: 20170053782
    Abstract: Disclosed herein are various embodiments, including an electrostatic screen for use in a plasma processing chamber with a plurality of electrical leads. A plurality of petal groups is provided with each petal group comprising a substantially-flat structure, wherein each petal group is electrically connected to at least one electrical lead of the plurality of electrical leads and wherein each petal group is insulated from any other petal group, wherein the plurality of petal groups form a radial symmetry around a vertical axis. Each substantially flat structure comprises a sector of a conductive annulus and a plurality of conductive petals, each connected to the sector of the conductive annulus, wherein the at least one electrical lead is connected to substantially equal potential locations in each petal group.
    Type: Application
    Filed: August 21, 2015
    Publication date: February 23, 2017
    Inventors: Robert G. O'Neill, Neil M. P. Benjamin, Jie Zhang
  • Patent number: 9546432
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Grant
    Filed: August 4, 2015
    Date of Patent: January 17, 2017
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson
  • Patent number: 9412670
    Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.
    Type: Grant
    Filed: May 23, 2013
    Date of Patent: August 9, 2016
    Assignee: Lam Research Corporation
    Inventors: Robert G. O'Neill, Arthur Sato, Eric Tonnis, Seetharaman Ramachandran, Shang-I Chou
  • Patent number: 9337002
    Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener.
    Type: Grant
    Filed: March 12, 2013
    Date of Patent: May 10, 2016
    Assignee: LAM RESEARCH CORPORATION
    Inventors: John Daugherty, Hong Shih, Lin Xu, Anthony Amadio, Robert G. O'Neill, Peter Holland, Sivakami Ramanathan, Tae Won Kim, Duane Outka, John Michael Kerns, Sonia Castillo
  • Publication number: 20150337450
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Application
    Filed: August 4, 2015
    Publication date: November 26, 2015
    Applicant: LAM RESEARCH CORPORATION
    Inventors: Hong SHIH, Lin XU, John Michael KERNS, William CHARLES, John DAUGHERTY, Sivakami RAMANATHAN, Russell ORMOND, Robert G. O'NEILL, Tom STEVENSON
  • Patent number: 9123651
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Grant
    Filed: March 27, 2013
    Date of Patent: September 1, 2015
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson
  • Publication number: 20140349417
    Abstract: A system and method of applying power to a target plasma chamber include, characterizing a no plasma performance slope of the target plasma chamber, applying a selected plasma recipe to a first wafer in the target chamber, the selected plasma recipe includes a selected power set point value and monitoring a recipe factor value on the RF electrode. A ratio of process efficiency is generated comparing the reference chamber and the target chamber, the generating using as inputs the no plasma performance slopes of the target chamber and the reference chamber and the monitored recipe factor value. An adjusted power set point value is calculated, the adjusted power set point configured to cause power delivered to a plasma formed in the target chamber to match power that would be delivered to a reference plasma formed in the reference chamber.
    Type: Application
    Filed: May 23, 2013
    Publication date: November 27, 2014
    Applicant: Lam Research Corporation
    Inventors: Robert G. O'Neill, Arthur Sato, Eric Tonnis, Seetharaman Ramachandran, Shang-I Chou
  • Publication number: 20140295670
    Abstract: A method of forming a dense oxide coating on an aluminum component of semiconductor processing equipment comprises cold spraying a layer of pure aluminum on a surface of the aluminum component to a predetermined thickness. A dense oxide coating is then formed on the layer of pure aluminum using a plasma electrolytic oxidation process, wherein the plasma electrolytic oxidation process causes the layer of pure aluminum to undergo microplasmic discharges, thus forming the dense oxide coating on the layer of pure aluminum on the surface of the aluminum component.
    Type: Application
    Filed: March 27, 2013
    Publication date: October 2, 2014
    Applicant: Lam Research Corporation
    Inventors: Hong Shih, Lin Xu, John Michael Kerns, William Charles, John Daugherty, Sivakami Ramanathan, Russell Ormond, Robert G. O'Neill, Tom Stevenson
  • Publication number: 20140272459
    Abstract: Components of semiconductor material processing chambers are disclosed, which may include a substrate and at least one corrosion-resistant coating formed on a surface thereof. The at least one corrosion-resistant coating is a high purity metal coating formed by a cold-spray technique. An anodized layer can be formed on the high purity metal coating. The anodized layer comprises a process-exposed surface of the component. Semiconductor material processing apparatuses including one or more of the components are also disclosed, the components being selected from the group consisting of a chamber liner, an electrostatic chuck, a focus ring, a chamber wall, an edge ring, a plasma confinement ring, a substrate support, a baffle, a gas distribution plate, a gas distribution ring, a gas nozzle, a heating element, a plasma screen, a transport mechanism, a gas supply system, a lift mechanism, a load lock, a door mechanism, a robotic arm and a fastener.
    Type: Application
    Filed: March 12, 2013
    Publication date: September 18, 2014
    Applicant: LAM RESEARCH CORPORATION
    Inventors: John Daugherty, Hong Shih, Lin Xu, Anthony Amadio, Robert G. O'Neill, Peter Holland, Sivakami Ramanathan, Tae Won Kim, Duane Outka, John Michael Kerns, Sonia Castillo
  • Patent number: D857192
    Type: Grant
    Filed: December 13, 2016
    Date of Patent: August 20, 2019
    Assignee: Merck Sharp & Dohme Corp.
    Inventors: Greg Burkett, Shu Kuen Chang, Angie Kim, Jin Ko, Scott Mackie, Philip G. Green, Sharad Gupta, Angela M. Amend Kwasnik, Christin L. O'Neill, Robert Stianchi, Witold Swiatek
  • Patent number: D870270
    Type: Grant
    Filed: July 28, 2017
    Date of Patent: December 17, 2019
    Assignee: Merck Sharp & Dohme Corp.
    Inventors: Greg Burkett, Shu Kuen Chang, Angie Kim, Jin Ko, Scott Mackie, Philip G. Green, Sharad Gupta, Angela M. Amend Kwasnik, Christin L. O'Neill, Robert Stianchi, Witold Swiatek